Patents by Inventor Kunihiro Kashiwagi

Kunihiro Kashiwagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080197016
    Abstract: The present invention aims to provide a ZnO thin film deposited substrate and a thin film deposition system exhibiting a specific resistance sufficiently reduced to be useful for transparent electrodes of a liquid crystal display, characterized in that Zn material evaporated and oxidized by microwave oxygen plasma to the compound ZnO which is, in turn, deposited on the substrate and thereby the thin film is formed, and the ZnO thin film deposited on the substrate is exposed to microwave hydrogen plasma so as to reduce a specific resistance of the ZnO thin film and thereby to modify this ZnO thin film to electrically conductive thin film.
    Type: Application
    Filed: February 20, 2007
    Publication date: August 21, 2008
    Applicant: MIKURO DENSHI CORPORATION LIMITED
    Inventors: Tsutomu TAKIZAWA, Takamichi NAKAYAMA, Kunihiro KASHIWAGI, Yuichi SAKAMOTO
  • Publication number: 20020008018
    Abstract: The invention provides a process for forming an optical composite film that has a desired refractive index and is easy in design of the film. The material of an inorganic optical film is deposited on a base through reactive ion plating in an atmosphere where organic substance gases containing a fluorinated hydrocarbon are introduced, thus to form an organic composite film having a refractive index different from the intrinsic refractive index of the material of an inorganic optical film.
    Type: Application
    Filed: February 12, 2001
    Publication date: January 24, 2002
    Inventors: Yoichi Murayama, Kunihiro Kashiwagi
  • Patent number: 5258886
    Abstract: A thin film capacitor composed of a hybrid dielectric thin film that is sandwiched by a pair of electrodes. The hybrid dielectric thin film is obtained by complexing or accumulating first and second regions. The first region is derived from an ion plating source and the second region is derived from another ion plating source containing an auxiliary material to be coupled with the first region, both being obtained through an ion plating process. The use of the auxiliary material ensures a pinhole-free hybrid dielectric thin film.
    Type: Grant
    Filed: June 18, 1992
    Date of Patent: November 2, 1993
    Assignees: C. Itoh Fine Chemical Co., Ltd., Yoichi Murayama
    Inventors: Yoichi Murayama, Kunihiro Kashiwagi, Yasuhiko Yoshida
  • Patent number: 3962988
    Abstract: Apparatus for coating a substrate with a material comprises means for providing an h.f. glow discharge region adjacent to a source for the material. The h.f. glow discharge ionizes the particles of the material of the source evaporated therefrom, instead of a conventional d.c. discharge produced by a d.c. electric field provided between the source and substrate. The h.f. glow discharge region providing means may comprise an h.f. electrode disposed in a gas-filled space of the apparatus between the evaporation source and the substrate and means for applying an h.f. electric voltage between the h.f. electrode and the evaporation source.
    Type: Grant
    Filed: March 1, 1974
    Date of Patent: June 15, 1976
    Assignees: Yoichi Murayama, Nippon Electric Varian Ltd., Koito Manufacturing Co., Ltd.
    Inventors: Yoichi Murayama, Masayuki Matsumoto, Kunihiro Kashiwagi