Abstract: A solid-state imaging device as disclosed includes a plurality of photoelectric conversion units, a pair of voltage application units, a charge detection unit, and a pixel separation unit. The photoelectric conversion units are in a semiconductor layer The pair of voltage application units are on the opposite side of the semiconductor layer from a light incident surface side. The charge detection unit annularly surrounds each of the voltage application units in plan view and detects the signal charges distributed according to alternate application of a predetermined voltage to the pair of voltage application units. The pixel separation unit partitions and separates the semiconductor layer for each of the photoelectric conversion units in plan view and extends in a depth direction of the semiconductor layer from the light incident surface. An insulating film having a film thickness of 2 nm or more is provided between the pixel separation unit and the semiconductor layer.