Abstract: In a method of manufacturing a solar cell including a p-n junction formed in a semiconductor substrate, impurity ions are implanted through a mask in the form of an oxide film covering a light receiving surface of the semiconductor substrate except an electrode forming part, thereby forming a p-n junction which is deep in an area beneath the electrode forming part but shallow in the remaining area. Formation of the shallow p-n junction improves the spectral sensitivity in a short wavelength range. Further, utilization of the oxide film as a passivation film can prevent shortening of the life time of minority carriers in the substrate due to heat treatment, thereby retarding the electron-hole recombination rate at the light receiving surface of the substrate.

Abstract: A process for producing solar cells which comprises applying a composition for anti-reflection coating formation on one side of a silicon base plate having a p-n junction therein, printing an Ag paste for contact formation on predetermined areas of the coat, and heat-treating the resulting plate at a temperature of 400.degree. to 900.degree. C. to complete anti-reflection coating and a light-receiving side contact, the process being characterized in that the composition for anti-reflection coating formation contains as essential component, (a) at least one member selected from the metal-organic ligand complex compounds represented by the general formula M(OR.sub.1).sub.n (L).sub.a-n wherein M is a metal selected from Zn, Al, Ga, In, Ti, Zr, Sn, V, Nb, Ta, Mo, and W; R.sub.1 is a C.sub.1 -C.sub.18 alkyl group; L is an organic ligand which forms an non-hydrolyzable bond with the metal ion; a is the valency of the metal M; and n is an integer satisfying 1.ltoreq.