Abstract: The present invention provides an optical film having a liquid crystal layer having excellent durability, and a liquid crystal film. The optical film of the present invention has an organic base material and a liquid crystal layer disposed on the organic base material, the liquid crystal layer contains a photo-alignment compound, and in the liquid crystal layer, the photo-alignment compound is unevenly distributed on a side of the organic base material.

Abstract: An acceleration sensor includes an acceleration sensor element and a frame portion surrounding the element. The sensor element and the frame portion are located on a major surface of a substrate. An intermediate layer is formed on the frame portion. A cap portion is bonded to the intermediate layer, thereby sealing-off the acceleration sensor element. Grooves in the form of a frame are provided in the frame portion and the intermediate layer, respectively, and located at positions generally identical to each other with regard to the major surface direction of the substrate.

Abstract: An acceleration sensor includes an acceleration sensor element and a frame portion surrounding the element. The sensor element and the frame portion are located on a major surface of a substrate. An intermediate layer is formed on the frame portion. A cap portion is bonded to the intermediate layer, thereby sealing-off the acceleration sensor element. Grooves in the form of a frame are provided in the frame portion and the intermediate layer, respectively, and located at positions generally identical to each other with regard to the major surface direction of the substrate.

Abstract: Provided is a method of manufacturing an acceleration sensor capable of preventing bonding of a movable electrode and a fixed electrode. A stain film 8 for reducing bonding adsorption force is formed on side surfaces of a movable electrode 1, fixed electrodes 2a and 2b and a frame portion 7. In the case in which the movable electrode 1 and the fixed electrodes 2a and 2b are to be formed of a silicon substrate, it is preferable that an insulating film having irregular bonding of silicon atoms and oxygen atoms and irregular bonding of silicon atoms and nitrogen atoms should be employed for the stain film 8, for example. The formation of the stain film 8 can suppress the bonding between the movable electrode 1 and the fixed electrodes 2a and 2b even if Coulomb force is generated between both electrodes when the silicon substrate and a back side substrate 4 are joined by using an anode junction method.

Abstract: In manufacturing hermetically sealed semiconductor devices, a plurality of generally rectangular openings are first formed into a matrix pattern in a cap silicon wafer so that the plurality of generally rectangular openings are separated by a plurality of row segments extending in a first direction and a plurality of column segments extending in a second direction perpendicular to the first direction. On the other hand, a plurality of semiconductor elements each having a plurality of electrode portions are bonded to a semiconductor wafer. After each of the plurality of generally rectangular openings has been aligned with the plurality of electrode portions of at least one of the plurality of semiconductor elements, the cap wafer is bonded to the plurality of semiconductor elements.

Abstract: Provided is a method of manufacturing an acceleration sensor capable of preventing bonding of a movable electrode and a fixed electrode. A stain film 8 for reducing bonding adsorption force is formed on side surfaces of a movable electrode 1, fixed electrodes 2a and 2b and a frame portion 7. In the case in which the movable electrode 1 and the fixed electrodes 2a and 2b are to be formed of a silicon substrate, it is preferable that an insulating film having irregular bonding of silicon atoms and oxygen atoms and irregular bonding of silicon atoms and nitrogen atoms should be employed for the stain film 8, for example. The formation of the stain film 8 can suppress the bonding between the movable electrode 1 and the fixed electrodes 2a and 2b even if Coulomb force is generated between both electrodes when the silicon substrate and a back side substrate 4 are joined by using an anode junction method.

Abstract: In manufacturing hermetically sealed semiconductor devices, a plurality of generally rectangular openings are first formed into a matrix pattern in a cap silicon wafer so that the plurality of generally rectangular openings are separated by a plurality of row segments extending in a first direction and a plurality of column segments extending in a second direction perpendicular to the first direction. On the other hand, a plurality of semiconductor elements each having a plurality of electrode portions are bonded to a semiconductor wafer. After each of the plurality of generally rectangular openings has been aligned with the plurality of electrode portions of at least one of the plurality of semiconductor elements, the cap wafer is bonded to the plurality of semiconductor elements.

Abstract: Provided is a method of manufacturing an acceleration sensor capable of preventing bonding of a movable electrode and a fixed electrode. A stain film 8 for reducing bonding adsorption force is formed on side surfaces of a movable electrode 1, fixed electrodes 2a and 2b and a frame portion 7. In the case in which the movable electrode 1 and the fixed electrodes 2a and 2b are to be formed of a silicon substrate, it is preferable that an insulating film having irregular bonding of silicon atoms and oxygen atoms and irregular bonding of silicon atoms and nitrogen atoms should be employed for the stain film 8, for example. The formation of the stain film 8 can suppress the bonding between the movable electrode 1 and the fixed electrodes 2a and 2b even if Coulomb force is generated between both electrodes when the silicon substrate and a back side substrate 4 are joined by using an anode junction method.

Abstract: In order to provide a semiconductor device which has a bonding layer capable of providing electrical continuity between the cap and the semiconductor substrate, the semiconductor device comprises a semiconductor substrate whereon an element is formed on one principal plane thereof and a cap which hermetically seals the element so that a space is formed over the element, while the element is sealed by bonding a laminated bonding layer, which is formed around the element provided on the principal plane, and an Ni layer formed on the cap, wherein the laminated bonding layer is constituted from a first polysilicon layer which is doped with an impurity, an insulation layer and a second polysilicon layer which is not doped with an impurity, while the first polysilicon layer and the second polysilicon layer contact with each other in a part thereof so that the impurity diffuses through the contact area from the first polysilicon layer into the second polysilicon layer.

Abstract: In order to provide a semiconductor device which has a bonding layer capable of providing electrical continuity between the cap and the semiconductor substrate, the semiconductor device comprises a semiconductor substrate whereon an element is formed on one principal plane thereof and a cap which hermetically seals the element so that a space is formed over the element, while the element is sealed by bonding a laminated bonding layer, which is formed around the element provided on the principal plane, and an Ni layer formed on the cap, wherein the laminated bonding layer is constituted from a first polysilicon layer which is doped with an impurity, an insulation layer and a second polysilicon layer which is not doped with an impurity, while the first polysilicon layer and the second polysilicon layer contact with each other in a part thereof so that the impurity diffuses through the contact area from the first polysilicon layer into the second polysilicon layer.

Abstract: Providing an acceleration sensor in which a base portion and a cap portion are bonded to each other and a sensor portion is sealed off between these two, and which has an improved bonding strength between the base portion and the cap portion. A sensor portion and a frame portion surrounding a periphery of the sensor portion are disposed on a semiconductor substrate. A base portion is comprised, where a diffusion preventing layer and a non-doped polycrystalline silicon layer are stacked one atop the other on the frame portion. A cap portion is comprised, where a nickel layer is formed on a base unit. The non-doped polycrystalline silicon layer of the base portion and the nickel layer of the cap portion are bonded to each other by eutectic bonding.

Abstract: providing an acceleration sensor in which a base portion and a cap portion are bonded to each other and a sensor portion is sealed off between these two, and which has an improved bonding strength between the base portion and the cap portion. A sensor portion and a frame portion surrounding a periphery of the sensor portion are disposed on a semiconductor substrate. A base portion is comprised, where a diffusion preventing layer and a non-doped polycrystalline silicon layer are stacked one atop the other on the frame portion. A cap portion is comprised, where a nickel layer is formed on a base unit. The non-doped polycrystalline silicon layer of the base portion and the nickel layer of the cap portion are bonded to each other by eutectic bonding.

Abstract: In a steering system, a shaft unit is rotatably supported by a dashboard via a bearing member. When a vehicle hits against something or another vehicle, the bearing member frees the shaft unit from the dashboard. The bearing member includes a bearing and two brackets holding front and rear sides of the bearing. One of the brackets is attached to the dashboard. The brackets are disengaged from each other by a load applied by the collision of the vehicle, thereby freeing the shaft unit from the dashboard. The dashboard does not prevent the steering wheel and the freed shaft unit from moving toward a front part of the vehicle when a driver hits against the steering wheel due to inertia.

Abstract: The non-volatile memory like an EPROM is built in the disk storage device in association with the built-in processor. The non-volatile memory stores the directory data of the setting data necessary for loading the basic program to the computer. The non-volatile memory also stores the directory data of the stored disk data to omit track seek time of the head and rotation time of the disk during the data reading/writing operation. Thus, it is possible to shorten the preliminary starting time from power supply connection until the host computer is accessible to the disk storage device, and the access time at every data reading/writing operation.