Abstract: Provided are: a thermoelectric conversion body that has high electrical conductivity, achieving high thermoelectric conversion efficiency when used in a thermoelectric conversion module, and is less susceptible to warpage during manufacture; a method for manufacturing the same; and a thermoelectric conversion module using the same. A thermoelectric conversion body that is a fired product of a composition containing a thermoelectric semiconductor material and a heat resistant resin, wherein, with the heat resistant resin being subjected to temperature elevation and a weight of the heat resistant resin at 400° C. being defined as 100%, a temperature at which the heat resistant resin undergoes a further 5% reduction in weight is 480° C. or lower; a thermoelectric conversion module including the thermoelectric conversion body; and a method for manufacturing the thermoelectric conversion body.

Abstract: Provided are: a method for producing a chip of a thermoelectric conversion material that enables annealing treatment of a thermoelectric conversion material in the form not having a junction with an electrode, and enables annealing of a thermoelectric semiconductor material at an optimum annealing temperature; and a method for producing a thermoelectric conversion module using the chip (13).

Abstract: A thermoelectric conversion module having a further improved thermoelectric performance is provided. The thermoelectric conversion module includes: a base material; and a thermoelectric element layer including a thermoelectric semiconductor composition, wherein the thermoelectric semiconductor composition includes a thermoelectric semiconductor material, a heat resistant resin A, and an ionic liquid and/or inorganic ionic compound, and wherein the base material has a thermal resistance of 0.35 K/W or less.

Abstract: Provided is a method for manufacturing a thermoelectric conversion module that eliminates the need for supports and solder materials, allows collective and efficient production of a plurality of thin thermoelectric conversion modules, and includes the following steps (A) to (D): (A) disposing a chip of a P-type thermoelectric conversion material and a chip of an N-type thermoelectric conversion material on a support so as to be spaced apart from each other; (B) filling an insulator between the chip of the P-type thermoelectric conversion material and the chip of the N-type thermoelectric conversion material to obtain an integrated body including the chip of the P-type thermoelectric conversion material, the chip of the N-type thermoelectric conversion material, and the insulator; (C) peeling the integrated body obtained in step (B) from the support; and (D) connecting the chip of the P-type thermoelectric conversion material and the chip of the N-type thermoelectric conversion material via an electrode in the

Abstract: Provided is a thin thermoelectric conversion module provided with no support base material and including: an integrated body including an insulator configured to fill a gap defined by a chip of a P-type thermoelectric conversion material and a chip of an N-type thermoelectric conversion material, the chips being alternately arranged and spaced apart from each other; a common first electrode provided on one surface of the integrated body and joining one surface of the chip of the P-type thermoelectric conversion material and one surface of the chip of the N-type thermoelectric conversion material; and a common second electrode provided on another surface of the integrated body, facing the first electrode, and joining another surface of the chip of the N-type thermoelectric conversion material and another surface of the chip of the P-type thermoelectric conversion material, in which the first electrode and the second electrode provide electrically serial connection between the chip of the P-type thermoelectric

Abstract: A thermoelectric conversion module including, a first substrate having a first electrode, a second substrate having a second electrode, a chip of a thermoelectric conversion material made from a thermoelectric semiconductor composition, a first bonding material layer made from a first bonding material and bonding one surface of the chip of the thermoelectric conversion material and the first electrode, and a second bonding material layer made from a second bonding material and bonding another surface of the chip of the thermoelectric conversion material and the second electrode. A melting point of the second bonding material is lower than a melting point of the first bonding material, or the melting point of the second bonding material is lower than a curing temperature of the first bonding material.

Abstract: Provided is a thermoelectric conversion module including a thermoelectric conversion material layer that has high thermoelectric performance, the thermoelectric conversion material layer containing a thermoelectric conversion material with its electrical resistivity reduced. The thermoelectric conversion module includes the thermoelectric conversion material layer including the thermoelectric conversion material containing at least thermoelectric semiconductor particles. The thermoelectric conversion material layer has voids, and when a proportion of the area occupied by the thermoelectric conversion material within the area of a longitudinal cross-section that includes the center portion of the thermoelectric conversion material layer is defined as a filling ratio, the filling ratio is greater than 0.900 and less than 1.000.

Abstract: A thermoelectric conversion module having a further improved thermoelectric performance is provided. The thermoelectric conversion module includes: a base material; and a thermoelectric element layer including a thermoelectric semiconductor composition, wherein the thermoelectric semiconductor composition includes a thermoelectric semiconductor material, a heat resistant resin A, and an ionic liquid and/or inorganic ionic compound, and wherein the base material has a thermal resistance of 0.35 K/W or less.

Abstract: A method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including a step of forming a sacrificial layer on a substrate, (B) a step of forming a thermoelectric conversion material layer of a thermoelectric semiconductor composition on the sacrificial layer, (C) a step of annealing the thermoelectric conversion material layer, (D) a step of transferring the annealed thermoelectric conversion material layer to a pressure-sensitive adhesive layer, (E) a step of individualizing the thermoelectric conversion material layer into individual chips of a thermoelectric conversion material, and (F) a step of peeling the individualized chips of a thermoelectric conversion material; and a method for producing a thermoelectric conversion module using the chip produced according to the production method.

Abstract: The present invention is to provide a method of producing a thermoelectric conversion device having a thermoelectric element layer with excellent shape controllability and capable of being highly integrated. The present invention relates to a method of producing a thermoelectric conversion device including a thermoelectric element layer formed of a thermoelectric semiconductor composition containing a thermoelectric semiconductor material on a substrate, the method including a step of providing a pattern frame having openings on a substrate; a step of filling the thermoelectric semiconductor composition in the openings; a step of drying the thermoelectric semiconductor composition filled in the openings, to form a thermoelectric element layer; and a step of releasing the pattern frame from the substrate.

Abstract: A chip of thermoelectric conversion material may have a concave portion and may be capable of realizing high joining properties to an electrode. Such a chip of thermoelectric conversion material may have a concave on at least one surface of the chip of thermoelectric conversion material. The shape of such chips of may be rectangular parallelepiped, cubic, and/or columnar shape.

Abstract: Provided are: a thermoelectric conversion body that has high electrical conductivity, achieving high thermoelectric conversion efficiency when used in a thermoelectric conversion module, and is less susceptible to warpage during manufacture; a method for manufacturing the same; and a thermoelectric conversion module using the same. A thermoelectric conversion body that is a fired product of a composition containing a thermoelectric semiconductor material and a heat resistant resin, wherein, with the heat resistant resin being subjected to temperature elevation and a weight of the heat resistant resin at 400° C. being defined as 100%, a temperature at which the heat resistant resin undergoes a further 5% reduction in weight is 480° C. or lower; a thermoelectric conversion module including the thermoelectric conversion body; and a method for manufacturing the thermoelectric conversion body.

Abstract: The present invention provides: a thermoelectric conversion material capable of being produced in a simplified manner and at a lower cost and excellent in thermoelectric performance and flexibility, and a method for producing the material. The thermoelectric conversion material has, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound. The method for producing a thermoelectric conversion material having, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound includes a step of applying a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound onto a support and drying it to form a thin film thereon, and a step of annealing the thin film.

Abstract: Provided are an electrode material for thermoelectric conversion modules capable of preventing cracking and peeling of electrodes that may occur at the bonding parts of a thermoelectric element and an electrode under high-temperature conditions to thereby maintain a low resistance at the bonding parts, and a thermoelectric conversion module using the material.

Abstract: A method for producing an intermediate for thermoelectric conversion modules may avoid a supporting substrate, enabling annealing of a thermoelectric semiconductor material in a form avoiding a joint to an electrode, and enabling annealing of a thermoelectric semiconductor material at an optimum temperature. Such methods may produce an intermediate for thermoelectric conversion modules containing a P-type thermoelectric and an N-type thermoelectric element layer of a thermoelectric semiconductor composition, and include (A) forming the P-type thermoelectric element layer and the N-type thermoelectric element layer on a substrate; (B) annealing the P-type and N-type thermoelectric element layer formed in (A); (C) forming a sealant layer containing a curable resin or a cured product thereof, on the P-type and N-type thermoelectric element layer annealed in (B); and (D) peeling the P-type and the N-type thermoelectric element layer and also the sealant layer formed in (B) and (C) from the substrate.

Abstract: A chip of thermoelectric conversion material may have a concave portion and may be capable of realizing high joining properties to an electrode. Such a chip of thermoelectric conversion material may have a concave on at least one surface of the chip of thermoelectric conversion material. The shape of such chips of may be rectangular parallelepiped, cubic, and/or columnar shape.

Abstract: Provided are: a method for producing a chip of a thermoelectric conversion material that enables annealing treatment of a thermoelectric conversion material in the form not having a junction with an electrode, and enables annealing of a thermoelectric semiconductor material at an optimum annealing temperature; and a method for producing a thermoelectric conversion module using the chip (13).

Abstract: The present invention is to provide a method of producing a thermoelectric conversion device having a thermoelectric element layer with excellent shape controllability and capable of being highly integrated. The present invention relates to a method of producing a thermoelectric conversion device including a thermoelectric element layer formed of a thermoelectric semiconductor composition containing a thermoelectric semiconductor material on a substrate, the method including a step of providing a pattern frame having openings on a substrate; a step of filling the thermoelectric semiconductor composition in the openings; a step of drying the thermoelectric semiconductor composition filled in the openings, to form a thermoelectric element layer; and a step of releasing the pattern frame from the substrate.

Abstract: A method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including a step of forming a sacrificial layer on a substrate, (B) a step of forming a thermoelectric conversion material layer of a thermoelectric semiconductor composition on the sacrificial layer, (C) a step of annealing the thermoelectric conversion material layer, (D) a step of transferring the annealed thermoelectric conversion material layer to a pressure-sensitive adhesive layer, (E) a step of individualizing the thermoelectric conversion material layer into individual chips of a thermoelectric conversion material, and (F) a step of peeling the individualized chips of a thermoelectric conversion material; and a method for producing a thermoelectric conversion module using the chip produced according to the production method.

Abstract: Provided is a thermoelectric conversion module that improves the solderability between a thermoelectric element layer containing a resin and a solder layer. The thermoelectric conversion module includes a first substrate having a first electrode, a second substrate having a second electrode, a thermoelectric element layer, a solder-receiving layer that directly bonds to the thermoelectric element layer, and a solder layer, wherein the first electrode of the first substrate and the second electrode of the second substrate face each other, and wherein the thermoelectric element layer is formed of a thin film of a thermoelectric semiconductor composition containing a resin, and the solder-receiving layer contains a metal material.