Abstract: A thermoelectric module comprising nanostructured SnO and SnO2, and electrodes arranged between two electrical insulating substrates is described. The nanostructured SnO may be in the form of nanosheets and acting as p-type pillars of the module. The nanostructured SnO2 may be in the form of nanospheres and acting as n-type pillars of the module. This thermoelectric module is evaluated on the voltage, current, and power of the electricity generated once subjected to a temperature gradient.

Abstract: A thermoelectric module comprising nanostructured SnO and SnO2, and electrodes arranged between two electrical insulating substrates is described. The nanostructured SnO may be in the form of nanosheets and acting as p-type pillars of the module. The nanostructured SnO2 may be in the form of nanospheres and acting as n-type pillars of the module. This thermoelectric module is evaluated on the voltage, current, and power of the electricity generated once subjected to a temperature gradient.

Abstract: A thermoelectric module comprising nanostructured SnO and SnO2, and electrodes arranged between two electrical insulating substrates is described. The nanostructured SnO may be in the form of nanosheets and acting as p-type pillars of the module. The nanostructured SnO2 may be in the form of nanospheres and acting as n-type pillars of the module. This thermoelectric module is evaluated on the voltage, current, and power of the electricity generated once subjected to a temperature gradient.

Abstract: A thermoelectric module comprising nanostructured SnO and SnO2, and electrodes arranged between two electrical insulating substrates is described. The nanostructured SnO may be in the form of nanosheets and acting as p-type pillars of the module. The nanostructured SnO2 may be in the form of nanospheres and acting as n-type pillars of the module. This thermoelectric module is evaluated on the voltage, current, and power of the electricity generated once subjected to a temperature gradient.

Abstract: A thermoelectric conversion material having a novel composition is provided. The thermoelectric conversion material comprises a first dielectric material layer, a second dielectric material layer, and an electron localization layer that is present between the first dielectric material layer and the second dielectric material layer and that has a thickness of 1 nm.

Abstract: There are provided a film of surface Nb-containing La-STO cubic crystal particles that is effective as, for example, a thermoelectric conversion material for use at low temperatures of around room temperature, and an art for producing this film. The production method includes preparing a mixed aqueous solution in which an La-containing compound, an Sr-containing compound, a six-fold coordinated Ti complex compound, and an amphiphilic compound are dissolved; growing cubic-form crystals formed of La-doped STO in the mixed aqueous solution by a hydrothermal synthesis method; obtaining surface Nb-containing La-STO cubic crystal particles by dissolving a niobium-containing compound in this mixed solution and heating; and forming a particle film in which the surface Nb-containing La-STO cubic crystal particles are bonded, by disposing the surface Nb-containing La-STO cubic crystal particles on a substrate and carrying out firing.

Abstract: The present invention relates to a vanadium oxide thin film pattern which is fabricated by using APTS (3-aminopropyltriethoxysilane, H2NC3H5Si(OCH3)3) or the like to prepare an APTS-SAM or the like on the surface of a substrate, irradiating this APTS-SAM with vacuum ultraviolet light through a photomask to thereby modify amino-terminal silanes into silanol groups in the exposed area, and then depositing vanadium oxide in a liquid phase using a patterned self-assembled monolayer having the amino-terminated silane surface and silanol group surface as a template for patterning the vanadium oxide, to a method of fabricating the same, and to a vanadium oxide device.

Abstract: A thermoelectric conversion material includes a superlattice structure produced by laminating a barrier layer containing insulating SrTiO3, and a quantum well layer containing SrTiO3 which has been converted into a semiconductor by doping an n-type impurity therein. The quantum well layer has a thickness 4 times or less the unit lattice thickness of SrTiO3 which has been converted into a semiconductor by doping an n-type impurity therein.

Abstract: The present invention relates to a vanadium oxide thin film pattern which is fabricated by using APTS (3-aminopropyltriethoxysilane, H2NC3H5Si(OCH3)3) or the like to prepare an APTS-SAM or the like on the surface of a substrate, irradiating this APTS-SAM with vacuum ultraviolet light through a photomask to thereby modify amino-terminal silanes into silanol groups in the exposed area, and then depositing vanadium oxide in a liquid phase using a patterned self-assembled monolayer having the amino-terminated silane surface and silanol group surface as a template for patterning the vanadium oxide, to a method of fabricating the same, and to a vanadium oxide device.

Abstract: A thermoelectric conversion material includes a superlattice structure produced by laminating a barrier layer containing insulating SrTiO3, and a quantum well layer containing SrTiO3 which has been converted into a semiconductor by doping an n-type impurity therein. The quantum well layer has a thickness 4 times or less the unit lattice thickness of SrTiO3 which has been converted into a semiconductor by doping an n-type impurity therein.

Abstract: A thermoelectric conversion material having a novel composition is provided. The thermoelectric conversion material comprises a first dielectric material layer, a second dielectric material layer, and an electron localization layer that is present between the first dielectric material layer and the second dielectric material layer and that has a thickness of 1 nm.

Abstract: Grain oriented ceramics constituted of a polycrystalline body of a layered cobaltite in which a {001} plane of each grain constituting the polycrystalline body has an average orientation degree of 50% or more by the Lotgering's method. In this case, the layered cobaltite is preferably a layered calcium cobaltite expressed by the following general formula: {(Ca1−xAx)2CoO3+&agr;} (CoO2+&bgr;)y (where A represents one or more elements selected among an alkali metal, an alkaline earth metal and Bi, 0≦×≦0.3, 0.5≦y≦2.0, and 0.85≦{3+&agr;+(2+&bgr;)y}/(3+2y)≦1.15). Such grain oriented ceramics are obtained by molding a mixture of the first powder constituted of a Co(OH)2 platelike powder and the second powder constituted of CaCO3 and the like such that a developed plane of the platelike powder is oriented, and by heating the green body at a predetermined temperature.

Abstract: Grain oriented ceramics constituted of a polycrystalline body of a layered cobaltite in which a {001}plane of each grain constituting the polycrystalline body has an average orientation degree of 50% or more by the Lotgering's method. In this case, the layered cobaltite is preferably a layered calcium cobaltite expressed by the following general formula: {(Ca1−xAx)2CoO3+&agr;} (CoO2+&bgr;)y (where A represents one or more elements selected among an alkali metal, an alkaline earth metal and Bi, 0 ≦×≦0.3, 0.5 ≦y ≦2.0, and 0.85 ≦{3+&agr;+(2+&bgr;)y}/(3+2y) ≦1.15). Such grain oriented ceramics are obtained by molding a mixture of the first powder constituted of a Co(OH)2 platelike powder and the second powder constituted of CaCO3 and the like such that a developed plane of the platelike powder is oriented, and by heating the green body at a predetermined temperature.