Abstract: A SAW resonator which, using a quartz crystal substrate with Euler angles (?1.5°???1.5°, 117°???142°, and 41.9°?|?|?49.57°, includes an IDT that excites a stop band upper end mode SAW, and an inter-electrode finger groove provided between electrode fingers configuring the IDT. When a wavelength of the SAW is ?, a first depth of the inter-electrode finger groove is G, a line occupation rate of the IDT is ?, and an electrode film thickness of the IDT is H, ?, G, ? and H satisfy the relationship of 0<H?0.005?, 0.01??G?0.09?, and 0.18???0.71.

Abstract: A surface acoustic wave resonator includes an IDT that is disposed on a quartz crystal substrate of Euler angles (?1.5°???1.5°, 117°???142°, ?) and excites a surface acoustic wave resonant in an upper part of a stop-band of the IDT, and inter-electrode finger grooves that are acquired by depressing the substrate located between electrode fingers configuring the IDT. The wavelength of the surface acoustic wave, the depth of the inter-electrode finger grooves, the line occupancy ratio of the IDT, and the film thickness of the electrode fingers of the IDT are set in correspondence with one another.

Abstract: A semiconductor integrated circuit includes a semiconductor substrate on which an oscillation circuit that generates an oscillation signal by oscillating a resonation element, and a plurality of output circuits that outputs signals based on the oscillation signal, are integrated. A package contains the semiconductor integrated circuit and the resonation element. In the semiconductor integrated circuit, an operation of a first output circuit and an operation of a second output circuit, among a plurality of output circuits, are controlled independently from each other.

Abstract: A SAW device includes a SAW chip formed of a piezoelectric substrate and an IDT formed thereon, a base substrate that supports the SAW chip, and a fixing member that fixes the SAW chip to the base substrate. The SAW chip that forms a cantilever is supported by the base substrate via the fixing member in a position where the IDT does not overlap with the fixing member in a plan view of the SAW chip. The length W of the SAW chip in a y-axis direction and the length D of the fixing member in the y-axis direction satisfy 1<D/W?1.6. The fixing member bonds the lower surface and side surfaces of the fixed end of the SAW chip to the base substrate.

Abstract: A semiconductor integrated circuit includes a semiconductor substrate on which an oscillation circuit that generates an oscillation signal by oscillating a resonation element, and a plurality of output circuits that outputs signals based on the oscillation signal, are integrated. A package contains the semiconductor integrated circuit and the resonation element. In the semiconductor integrated circuit, an operation of a first output circuit and an operation of a second output circuit, among a plurality of output circuits, are controlled independently from each other.

Abstract: A surface acoustic wave (SAW) resonator and a SAW oscillator and an electronic apparatus including the resonator are to be provided. A SAW resonator includes: an IDT exciting a SAW using a quartz crystal substrate of Euler angles (?1.5°???1.5°, 117°???142°, 42.79°?|?|?49.57°); one pair of reflection units arranged so as allow the IDT to be disposed therebetween; and grooves acquired by depressing the quartz crystal substrate located between electrode fingers. When a wavelength of the SAW is ?, and a depth of the grooves is G, “0.01??G” is satisfied.

Abstract: A surface acoustic wave (SAW) resonator and a SAW oscillator and an electronic apparatus including the resonator are to be provided. A SAW resonator includes: an IDT exciting a SAW using a quartz crystal substrate of Euler angles (?1.5°???1.5°, 117°???142°, 42.79°?|?|?49.57°); one pair of reflection units arranged so as allow the IDT to be disposed therebetween; and grooves acquired by depressing the quartz crystal substrate located between electrode fingers. When a wavelength of the SAW is ?, and a depth of the grooves is G, “0.01??G” is satisfied.

Abstract: A SAW resonator which, using a quartz crystal substrate with Euler angles (?1.5°???1.5°, 117°???142°, and 41.9°?|?|?49.57°, includes an IDT that excites a stop band upper end mode SAW, and an inter-electrode finger groove provided between electrode fingers configuring the IDT. When a wavelength of the SAW is ?, a first depth of the inter-electrode finger groove is G, a line occupation rate of the IDT is ?, and an electrode film thickness of the IDT is H, ?, G, ? and H satisfy the relationship of 0<H?0.005?, 0.01??G?0.09?, and 0.18???0.71.

Abstract: A SAW resonator which, using a quartz crystal substrate with Euler angles (?1.5°???1.5°, 117°???142°, and 42.79°?|105|?49.57°, includes an IDT which excites a stop band upper end mode SAW, and grooves hollowed out of the substrate positioned between electrode fingers configuring the IDT, wherein, when the wavelength of the SAW is ? and the depth of the inter-electrode finger grooves is G, ? and G satisfy the relationship of 0.01??G and wherein, when the line occupation rate of the IDT is ?, the groove depth G and line occupation rate ? satisfy the relationships of ?2.0000×G/?+0.7200????2.5000×G/?+0.7775 provided that 0.0100??G?0.0500?, ?3.5898×G/?+0.7995????2.5000+G/?+0.7775 provided that 0.0500?<G?0.0695?.

Abstract: A SAW resonator which, using a quartz crystal substrate with Euler angles (?1.5°???1.5°, 117°???142°, and 41.9°?|?|?49.57°), includes an IDT that excites a stop band upper end mode SAW, and an inter-electrode finger groove provided between electrode fingers configuring the IDT. When a wavelength of the SAW is ?, a first depth of the inter-electrode finger groove is G, a line occupation rate of the IDT is ?, and an electrode film thickness of the IDT is H, ?, G, ? and H satisfy the relationship of 0<H?0.005?, 0.01??G?0.09?, and 0.18???0.71.

Abstract: A surface acoustic wave resonator includes: an IDT which is disposed on a quartz substrate with Euler angles of (?1°???1°, 117°???142°, 42.79°?|?|?49.57°), which is made of Al or alloy including Al as a main component and which excites a surface acoustic wave in an upper mode of a stop band; and an inter-electrode-finger groove which is formed by recessing the quartz substrate between electrode fingers which form the IDT. Here, the following expression is satisfied: 0.01??G??(1), where ? represents a wavelength of the surface acoustic wave and G represents a depth of the inter-electrode-finger groove. The depth G of the inter-electrode-finger groove and a line occupancy ? of the IDT satisfy the following expression: - 2.5 × G ? + 0.675 ? ? ? - 2.5 × G ? + 0.775 ( 5 ) and a number of pairs N of the electrode fingers in the IDT is in the range of the following expression: 160?N?220??(19).

Abstract: A SAW device includes a SAW chip formed of a piezoelectric substrate and an IDT formed thereon, a base substrate that supports the SAW chip, and a fixing member that fixes the SAW chip to the base substrate. The SAW chip that forms a cantilever is supported by the base substrate via the fixing member in a position where the IDT does not overlap with the fixing member in a plan view of the SAW chip. The length W of the SAW chip in a y-axis direction and the length D of the fixing member in the y-axis direction satisfy 1<D/W?1.6. The fixing member bonds the lower surface and side surfaces of the fixed end of the SAW chip to the base substrate.

Abstract: It is possible to reduce the size of a surface acoustic wave (SAW) resonator by enhancing a Q value. In a SAW resonator in which an IDT having electrode fingers for exciting SAW is disposed on a crystal substrate, the IDT includes a first region disposed at the center of the IDT and a second region and a third region disposed on both sides of the first region. A frequency is fixed in the first region and a portion in which a frequency gradually decreases as it approaches an edge of the IDT is disposed in the second region and the third region. When the frequency of the first region is Fa, the frequency at an edge of the second region is FbM, and the frequency at an edge of the third region is FcN, the variations in frequency are in the ranges of 0.9815<FbM/Fa<0.9953 and 0.9815<FcN/Fa<0.9953, respectively.

Abstract: A surface acoustic wave resonator includes a quartz substrate with preselected Euler angles and an IDT on the quartz substrate. The IDT includes electrode fingers and excites a stop band upper end mode surface acoustic wave. Inter-electrode finger grooves are provided between the electrode fingers. Assuming a surface acoustic wave wavelength is ?, an electrode finger film thickness is H, an inter-electrode finger groove depth is G, a line occupation rate of convex portions of the substrate between the inter-electrode finger grooves is ?g, and a line occupation rate of the electrode fingers on the convex portions is ?e, 0.0407??G+H; and ?g>?e.

Abstract: A SAW device includes a SAW chip formed of a piezoelectric substrate and an IDT formed thereon, a base substrate that supports the SAW chip, and a fixing member that fixes the SAW chip to the base substrate. The SAW chip that forms a cantilever is supported by the base substrate via the fixing member in a position where the IDT does not overlap with the fixing member in a plan view of the SAW chip. The length W of the SAW chip in a y-axis direction and the length D of the fixing member in the y-axis direction satisfy 1<D/W?1.6. The fixing member bonds the lower surface and side surfaces of the fixed end of the SAW chip to the base substrate.

Abstract: A SAW resonator which, using a quartz crystal substrate with Euler angles (?1.5°???1.5°, 117°???142°, and 41.9°?|?|?49.57°), includes an IDT that excites a stop band upper end mode SAW, and an inter-electrode finger groove provided between electrode fingers configuring the IDT. When a wavelength of the SAW is ?, a first depth of the inter-electrode finger groove is G, a line occupation rate of the IDT is ?, and an electrode film thickness of the IDT is H, ?, G, ? and H satisfy the relationship of 0<H?0.005?, 0.01??G?0.09?, and 0.18???0.71.

Abstract: A SAW resonator which, using a quartz crystal substrate with Euler angles (?1.5°???1.5°, 117°???142°, and 42.79°?|105|?49.57°, includes an IDT which excites a stop band upper end mode SAW, and grooves hollowed out of the substrate positioned between electrode fingers configuring the IDT, wherein, when the wavelength of the SAW is ? and the depth of the inter-electrode finger grooves is G, ? and G satisfy the relationship of 0.01??G and wherein, when the line occupation rate of the IDT is ?, the groove depth G and line occupation rate ? satisfy the relationships of ?2.0000×G/?+0.7200????2.5000×G/?+0.7775 provided that 0.0100??G?0.0500?, ?3.5898×G/?+0.7995????2.5000+G/?+0.7775 provided that 0.0500?<G?0.0695?.

Abstract: It is possible to reduce the size of a surface acoustic wave resonator by enhancing the Q value. In a surface acoustic wave resonator in which an IDT having electrode fingers for exciting surface acoustic waves is formed on a crystal substrate, a line occupying ratio is defined as a value obtained by dividing the width of one electrode finger by the distance between the center lines of the gaps between one electrode finger and the electrode fingers adjacent to both sides thereof, and the IDT includes a region formed by gradually changing the line occupying ratio from the center to both edges so that the frequency gradually becomes lower from the center to both edges than the frequency at the center of the IDT.

Abstract: A surface acoustic wave resonator includes a piezoelectric substrate and an interdigital transducer (IDT) that includes electrode fingers exciting a surface acoustic wave on the piezoelectric substrate, a first region at a center of the IDT, and a second region and a third region at opposite sides of the IDT. In the IDT, a line occupation rate at which an electromechanical coupling coefficient becomes a maximum is different from the line occupation rate at which reflection of the surface acoustic wave becomes a maximum.

Abstract: A SAW device has an IDT which is provided on the principal surface of a quartz crystal substrate having Euler angles (?1.5°???1.5°, 117°???142°, 42.79?|?|?49.57°) and excites a SAW in a stopband upper end mode, and a pair of reflectors which are arranged on both sides of the IDT. Inter-electrode-finger grooves are recessed between the electrode fingers of the IDT, and inter-conductor-strip grooves are recessed between the conductor strips of the reflectors. A first direction (X? axis) perpendicular to the electrode fingers and the conductor strips intersects the electrical axis (X axis) of the quartz crystal substrate at an angle ?. At least a part of the IDT and the reflectors are arranged in a second direction intersecting the first direction at an angle ? of 1.0°???2.75°. An excellent frequency-temperature characteristic and a high Q value in an operation temperature range are realized simultaneously.