Abstract: In a concentric cylinder macromolecule represented by a combination of B(2,1)n (n=1, 2, . . . ), each layer thereof has a conductivity of metal and hence there is obtained a concentric cylinder having a high conductivity. In graphite, the layers are bonded with each other by a weak van der Waals force and a two-dimensional band structure can be assumed. In a multi-layer cylinder, since the number of hexagons in the radial direction varies between the layers, the layers are much more independent of each other. There are accordingly implemented a semiconductor having a narrow band gap and a semiconductor having a relatively wide band gap; consequently, the macromolecule can be broadly adopted for various functional devices.

Abstract: A high-molecular weight carbon material in which cylindrical high-molecular weight carbon materials in the form of a cylindrical tube are bonded through a soccer ball-like spherical high-molecular weight carbon material as a point of junction, the respective cylindrical high-molecular weight carbon materials being formed by rolling a plane network composed of a benzene shell-like hexagonal molecule formed of covalent-bonded carbon atoms, and the soccer ball-like spherical high-molecular weight carbon material being formed of material including five- and six-membered carbon rings. The high-molecular weight carbon material is useful as a material for various functional devices.

Abstract: A heterojunction-gate field-effect transistor comprises an active layer of semiconductor material having source and drain regions, an intermediate layer of another semiconductor material formed on the active layer between the source and drain regions, the intermediate layer inducing a two-dimensional charge layer in a surface portion of the active layer between the source and drain regions, and a gate electrode of a mixed semiconductor crystal formed on the intermediate layer to control the conductivity of the two-dimensional charge layer by an electrical potential applied thereto. The mixed semiconductor crystal may be GaP-InAs or mixed crystal of GaP-InAs mixed crystal and AlP-GaAs, AlsB-GaP, or GaSb-GaP mixed crystal.

Abstract: The bipolar transistor comprises an emitter of a first semiconductor, a base of a second semiconductor and a collector of a third semiconductor, the first semiconductor having edges of conduction and valence bands positioned outside the energy band gap of the second semiconductor, and the third semiconductor having an edge of conduction band for majority carriers positioned inside the energy band gap of the second semiconductor and an edge of valence band for majority carriers positioned outside the energy band gap of the second semiconductor.