Abstract: A resonant element includes: a fixed substrate having a main surface in orthogonal X- and Z-directions; a planar vibrating body fixed via support beams so as to be vibratable in an X-direction, the planar vibrating body having a weight portion which is isolated from the fixed substrate; an exciter for vibrating the planar vibrating body in the X-direction, and means for adjusting the resonance frequency of said planar vibrating body by providing electrostatic forces to said planar vibrating body, and for correcting the tilt of said planar vibrating body with respect to the substrate plane direction of said fixed substrate, the tilt correcting means being provided at least opposing edge areas of said planar vibrating body with a gap therebetween in the X-direction, on the plane side and spaced from said planar vibrating body in a Y-direction orthogonal to the X- and Z-directions.

Abstract: A resonant element includes: a fixed substrate having a main surface in orthogonal X- and Z-directions; a planar vibrating body fixed via support beams so as to be vibratable in an X-direction, the planar vibrating body having a weight portion which is isolated from the fixed substrate; an exciter for vibrating the planar vibrating body in the X-direction, and means for adjusting the resonance frequency of said planar vibrating body by providing electrostatic forces to said planar vibrating body, and for correcting the tilt of said planar vibrating body with respect to the substrate plane direction of said fixed substrate, the tilt correcting means being provided at least opposing edge areas of said planar vibrating body with a gap therebetween in the X-direction, on the plane side and spaced from said planar vibrating body in a Y-direction orthogonal to the X- and Z-directions.

Abstract: In the manufacture of a Schottky gate field effect transistor, an insulating film is deposited on the main surface of a semiconductor substrate and is then selectively removed to form therein a window through which the substrate surface region for forming an active layer is exposed to a space in which the gate will ultimately be provided. A metal which forms a Schottky junction between it and the semiconductor of the active layer and can be removed by anisotropic etching and a metal which can be used as a mask for the etching of the above metal are deposited in layers on the insulating film and the substrate surface exposed through the window. The overlying metal layer thus deposited is planarized to leave in the window alone. The underlying metal layer is selectively removed by anisotropic etching through the overlying metal layer remaining in the window, thus forming a gate electrode made up of the overlying and underlying metal layers.