Abstract: A power supply device includes a power supply circuit that permits an output voltage to be supplied to a succeeding-stage circuit, an external terminal configured to be connectable to the succeeding-stage circuit and to a pull-up resistor to which a supply voltage is applied, a transistor having a first terminal connected to the external terminal, a controller that turns the transistor from on to off when, during start-up of the output voltage, the output voltage enters a normal range and a fault detection circuit that can detect at least one of an open fault, in which the external terminal remains open, and a short fault, in which the external terminal is short-circuited to an application terminal for the supply voltage.

Abstract: An amplifier circuit configured to generate an error voltage corresponding the difference between a target voltage and a reference voltage includes: a first differential input pair having a first transistor configured to receive the target voltage at its gate and a second transistor configured to receive the reference voltage at its gate; and a second differential input pair having a third transistor configured to receive the target voltage at its gate and a fourth transistor configured to receive the reference voltage at its gate. The amplifier circuit generates the error voltage based on the reference voltage by using the first or second differential input pair. The first and second transistors are formed as P-channel MOSFETs and the third and fourth transistors are formed as N-channel MOSFETs.

Abstract: This semiconductor device (10) has a heat source element (HSE) and a thermosensor element (TE) on a semiconductor chip (SCH). The profile of the heat source element (HSE) in plan view is recessed, and the depth (y1) of the recessed space (SP) is set to a size from 0.75 to 0.25 times that of the total length (y0). The center part (Tc) of the thermosensor element (TE) is situated in proximity to one side of a linking area (hse3), and is positioned in the space (SP) in such a way that length (y3) is shorter than length (x31a) and length (x31b). In so doing, heat source element temperature detection sensitivity and efficient positioning of the semiconductor elements can be achieved.

Abstract: The biaxially oriented polyester film of the present invention contains a polyester having a primary melting point of 245 to 265° C. as the main component and exhibits a drop bag strength index at 0° C. of at least 2.0 and a strength at break in the film longitudinal direction at 120° C. of at least 100 MPa. The film has superior heat resistance, mechanical strength, impact resistance, and bending resistance and is particularly suitable for packaging materials.

Abstract: The biaxially oriented polyester film of the present invention contains a polyester having a primary melting point of 245 to 265° C. as the main component and exhibits a drop bag strength index at 0° C. of at least 2.0 and a strength at break in the film longitudinal direction at 120° C. of at least 100 MPa. The film has superior heat resistance, mechanical strength, impact resistance, and bending resistance and is particularly suitable for packaging materials.