Abstract: A collimated-beam generating device using a semiconductor laser includes a two-lens system in which light converged by a first lens is converted into a collimated beam by a second lens, whereby a distance between the semiconductor laser and the first lens is made large, assembly of the device is made easy, and a collimated beam having a small beam diameter can be produced.

Abstract: In a photoelectric device, particularly, a photoelectric device for optical communication, an optical fiber is fixed at two fixing points so that the extremity of the optical fiber is disposed opposite to the light emitting surface of a laser diode chip and the optical fiber extends in a nonlinear shape, for example, in a moderate curve, between the two fixing points. Even though holding members fixedly holding the optical fiber at the two fixing points and a base member supporting the holding members are formed of a metal or metals having a coefficient of thermal expansion far greater than that of the optical fiber, and even if the distance between the two fixing points is varied due to the thermal expansion or contraction of the holding members and the base member, the optical fiber is obliged only to change the shape of extension.

Abstract: In a photoelectric device, particularly, a photoelectric device for optical communication, an optical fiber is fixed at two fixing points so that the extremity of the optical fiber is disposed opposite to the light emitting surface of a laser diode chip and the optical fiber extends in a nonlinear shape, for example, in a moderate curve, between the two fixing points. Even though holding members fixedly holding the optical fiber at the two fixing points and a base member supporting the holding members are formed of a metal or metals having a coefficient of thermal expansion far greater than that of the optical fiber, and even if the distance between the two fixing points is varied due to the thermal expansion or contraction of the holding members and the base member, the optical fiber is obliged only to change the shape of extension.

Abstract: A light emitting device including a light emergence device, an optical fiber for receiving light emerging from the light emergence device, and an optical fiber supporting member having a groove or hole for accommodating and fixing the optical fiber. The support member is adapted to be deformed when subjected to an external force so as to enable an alignment of the optical axes of the light emergence device and the optical fiber.

Abstract: A light emitting device including a light emergence device, an optical fiber for receiving light emerging from the light emergence device, and an optical fiber supporting member having a groove or hole for accommodating and fixing the optical fiber. The support member is adapted to be deformed when subjected to an external force so as to enable an alignment of the optical axes of the light emergence device and the optical fiber.

Abstract: In a photoelectric device, particularly, a photoelectric device for optical communication, an optical fiber is fixed at two fixing points so that the extremity of the optical fiber is disposed opposite to the light emitting surface of a laser diode chip and the optical fiber extends in a nonlinear shape, for example, in a moderate curve, between the two fixing points. Even though holding members fixedly holding the optical fiber at the two fixing points and a base member supporting the holding members are formed of a metal or metals having a coefficient of thermal expansion far greater than that of the optical fiber, and even if the distance between the two fixing points is varied due to the thermal expansion or contraction of the holding members and the base member, the optical fiber is obliged only to change the shape of extension.

Abstract: In the photo electro device, a laser diode chip is set fixedly through a submount to a heatsink in a package. In assembling, first a ball lens is anchored to a holder of a lens support frame by clinching claws of the holder. Subsequently the surfaces of the ball lens on the obverse and reverse sides of the lens support frame are coated with nonreflective films. Then the position of the lens support frame is adjusted relatively to the laser diode chip so that the respective optical axes are aligned with each other. And after an arm is welded fixedly to the heatsink, a frame member is severed or removed to complete the work for setting the ball lens.

Abstract: A semiconductor laser device having a stripe-shaped active region defined between a pair of end surfaces, at least one of the end surfaces having a curved cross-section in a plane parallel to the active region with a radius of curvature from 10 to 300 .mu.m, the stripe of the active region having such a width that a single transverse mode and a multi-longitudinal mode are allowed. The laser beam emitted from this laser can have little astigmatism and small spot size.

Abstract: A light emitting device including a light emergence device, an optical fiber for receiving light emerging from the light emergence device, and an optical fiber supporting member having a groove or hole for accommodating and fixing the optical fiber. The support member is adapted to be deformed when subjected to an external force so as to enable an alignment of the optical axes of the light emergence device and the optical fiber.

Abstract: Disclosed herein is a semiconductor laser device including at least an optical confinement region having at least first, second and third semiconductor layers disposed on a semiconductor substrate, wherein the first and third semiconductor layers have refractive indices greater than the refractive index of the second semiconductor layer but have forebidden band gap smaller than that of the second semiconductor layer and the conductivity types of the first and third semiconductor layers are opposite to each other; the second semiconductor layer has a smooth change of its thickness in two directions parallel to a junction surface of the optical confinement region; and a difference exists in the refractive indices of the first and third semiconductor layers.

Abstract: A semiconductor laser device including at least a laminated region of first, second, third and fourth semiconductor layers on a predetermined semiconductor substrate, wherein the third semiconductor layer has a refractive index smaller than that of the second semiconductor layer; the first and fourth semiconductor layers have a refractive index smaller than that of the second and third semiconductor layers and have a conductivity type opposite that of the second and third semiconductor layers; the forbidden band gap of the first and third semiconductor layers is greater than that of the second semiconductor layer; and at least the second and third semiconductor layers are bent so that the laser light generated inside the second semiconductor layer in the proximity of the laser light-emitting facets generates optical coupling in the third semiconductor layer and is emitted from the crystal facets of the third semiconductor layer.

Abstract: An optical pickup wherein a semiconductor laser device for projecting a laser beam onto an optical disc is driven by a D.C. current and a high-frequency current superposed thereon, and the laser device oscillates in a multiple longitudinal mode.

Abstract: In a semiconductor laser device having at least a first semiconductor layer, second and third semiconductor layers which are formed in a manner to sandwich the first semiconductor layer and which have a wider band gap and a lower refractive index than those of the first semiconductor layer, an optical resonator and carrier injection means; a semiconductor laser device characterized in that at least said first semiconductor layer has an angle of inclination (.theta.) relative to an axis which is perpendicular to optically flat faces constituting said optical resonator. The inclination angle .theta. (rad) should most preferably lie in a range of: ##EQU1## where .theta..sub.z denotes a reflection angle, .theta..sub.c a critical angle, W 1/2 of a thickness of a waveguide, and l a cavity length. The laser device is effective for preventing laser facets from breaking down, and can produce high power.

Abstract: A semiconductor laser device of this invention has a built-in passive guiding mechanism along the junction plane by growing planar double hetero (DH) layers on a grooved or projected substrate. It operates stably in the lowest transverse mode and provides light-output versus current characteristics free of either kinks or any anomalies.

Abstract: A semiconductor laser device is formed of a semiconductor material assembly including a first semiconductor layer having an active region formed directly by crystal growth on a substrate for the crystal growth having on the surface thereof a second semiconductor layer. A third semiconductor layer is also formed on the first layer. The refractive index of each of the second semiconductor material region and the third semiconductor layer is smaller than that of the first semiconductor layer while the band gap of each of the second semiconductor material region and the third semiconductor layer is broader than that of the first semiconductor layer.

Abstract: A semiconductor laser device of this invention has a built-in passive guiding mechanism along the junction plane by growing planar double hetero (DH) layers on a grooved or projected substrate. It operates stably in the lowest transverse mode and provides light-output versus current characteristics fee of either kinks or any anomalies.

Abstract: An optical head comprising a semiconductor laser array which is used as a light source, and an optical system which guides laser beams from the array to a predetermined recording medium. The beam from one lasing point of the array is modulated by predetermined information and is used as a recording beam, while the beam from another lasing point is continuously oscillated and is used as a playback beam.

Abstract: A light-emitting semiconductor device is provided having a light-emitting semiconductor element emitting light in two directions. The light-emitting element is disposed in a housing so that one light-emitting face of the semiconductor element adjacent a heat sink, and a light guide is arranged to confront the other light-emitting face of the semiconductor element and to guide light from said other light-emitting face to the outside of the housing. In this device, the end face of the light guide confronting said other light-emitting face of the semiconductor element includes a face substantially inclined to the optical axis of light emitted from the semiconductor element.

Abstract: A semiconductor device including a GaAs layer having a periodic corrugation on a surface thereof with a GaAsAl layer disposed on the periodic corrugation is formed by contacting a solution consisting of Ga, Al and As heated at a temperature of about 700.degree. C. to the corrugated surface of the GaAs layer and cooling the solution to a temperature of about 670.degree. C. at a cooling rate of 5.degree. C./min. whereby the periodic corrugation is not transfigured so much.

Abstract: A semiconductor laser device comprises an n-type GaAs layer, an n-type GaAlAs layer disposed on the n-type GaAs layer, an optical confinement region comprising a laser active region consisting of GaAs disposed on the n-type GaAlAs layer, a first p-type GaAlAs region whose aluminum content is less than that of the n-type GaAlAs layer, disposed on said laser active region and a second p-type GaAlAs region whose aluminum content is less than that of the first p-type GaAlAs region, the surface of which opposite that disposed on said first p-type GaAlAs region is a periodically corrugated surface, a p-type GaAlAs layer whose aluminum content is more than that of said first p-type GaAlAs region, disposed on the periodically corrugated surface of the second p-type GaAlAs region, a p-type GaAs layer disposed on said p-type GaAlAs layer, and electrodes disposed on the n-type and p-type GaAs layers, respectively, and which has a very low threshold value for laser oscillation and which is fabricated with a very high yie