Patents by Inventor Kunio Anzai

Kunio Anzai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor apparatus and method of manufacturing semiconductor apparatus
    Publication number: 20160093660
    Abstract: A semiconductor apparatus includes: an MOS type field effect transistor formed on a semiconductor substrate and having a first gate electrode set at a predetermined impurity concentration; and a charge modulation device formed on the semiconductor substrate and having a second gate electrode set at a predetermined impurity concentration lower than the impurity concentration of the first gate electrode.
    Type: Application
    Filed: November 30, 2015
    Publication date: March 31, 2016
    Inventor: Kunio Anzai
  • Semiconductor apparatus and method of manufacturing semiconductor apparatus
    Publication number: 20120104501
    Abstract: A semiconductor apparatus includes: an MOS type field effect transistor formed on a semiconductor substrate and having a first gate electrode set at a predetermined impurity concentration; and a charge modulation device formed on the semiconductor substrate and having a second gate electrode set at a predetermined impurity concentration lower than the impurity concentration of the first gate electrode.
    Type: Application
    Filed: September 28, 2011
    Publication date: May 3, 2012
    Applicant: Sony Corporation
    Inventor: Kunio Anzai
  • Semiconductor apparatus with improved yield
    Patent number: 7335992
    Abstract: The semiconductor apparatus includes a pad; a first line layer placed immediately beneath the pad; and a lattice-shaped contact being between the pad and the first line layer.
    Type: Grant
    Filed: March 28, 2005
    Date of Patent: February 26, 2008
    Assignee: NEC Electronics Corporation
    Inventor: Kunio Anzai
  • Semiconductor appartus
    Publication number: 20050212141
    Abstract: The semiconductor apparatus includes a pad; a first line layer placed immediately beneath the pad; and a lattice-shaped contact being between the pad and the first line layer.
    Type: Application
    Filed: March 28, 2005
    Publication date: September 29, 2005
    Inventor: Kunio Anzai