Abstract: Provided is a housing that effectively serves to block high-frequency electromagnetic waves in addition to low-frequency electromagnetic waves. A housing that houses an electronic or electric device includes at least one of a copper layer serving as a diamagnetic layer and a nickel layer serving as a ferromagnetic layer, stacked on each of front and back sides of an iron base member, and a bright tin layer further stacked thereon as an outermost layer.

Abstract: Provided is a housing that effectively serves to block high-frequency electromagnetic waves in addition to low-frequency electromagnetic waves. A housing that houses an electronic or electric device includes at least one of a copper layer serving as a diamagnetic layer and a nickel layer serving as a ferromagnetic layer, stacked on each of front and back sides of an iron base member, and a bright tin layer further stacked thereon as an outermost layer.

Abstract: A method of manufacturing a mechanical element includes: a first step of forming a mechanical element that has a sliding surface, which constitutes machinery, by precision machining; a second step of subjecting the sliding surface of the formed mechanical element to surface processing; and a third step of grinding down protrusions on the sliding surface of the mechanical element subjected to surface processing with a grinding agent composition in which ceramic particles are dispersed in oil and embedding the ceramic particles in cavities on the sliding surface of the mechanical element, the ceramic particles each having a hardness higher than a hardness of the mechanical element and being 0.01 µm or more and 0.5 µm or less in particle size.

Abstract: Provided is a housing that effectively serves to block high-frequency electromagnetic waves in addition to low-frequency electromagnetic waves. A housing that houses an electronic or electric device includes at least one of a copper layer serving as a diamagnetic layer and a nickel layer serving as a ferromagnetic layer, stacked on each of front and back sides of an iron base member, and a bright tin layer further stacked thereon as an outermost layer.

Abstract: As the technology relating to controlling electromagnetic waves radiating from the mobile phone such as smart phone during a phone call, wide band waveguide that controls electromagnetic waves radiating from mobile phone and radiating them towards hand was invented. Distance between mobile phone, waveguide and hand is 3 to 6% of the wavelength. Hence, design in near field condition was a problem. This problem was solved by measurement and wide band near field waveguide in which metal sheet is processed was realized. The quantity of electromagnetic waves received by head is reduced to ¼- 1/10 within the entire frequency band used by the mobile phone based on adding this part to the mobile phone such as smart phone.

Abstract: As the technology relating to controlling electromagnetic waves radiating from the mobile phone such as smart phone during a phone call, wide band waveguide that controls electromagnetic waves radiating from mobile phone and radiating them towards hand was invented. Distance between mobile phone, waveguide and hand is 3 to 6% of the wavelength. Hence, design in near field condition was a problem. This problem was solved by measurement and wide band near field waveguide in which metal sheet is processed was realized. The quantity of electromagnetic waves received by head is reduced to ¼- 1/10 within the entire frequency band used by the mobile phone based on adding this part to the mobile phone such as smart phone.

Abstract: Disclosed herein is a solar cell which is composed basically of a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a third semiconductor layer formed between them. The third semiconductor layer has a band gap narrower than that of the first and second semiconductor layers. The third semiconductor layer also has a pn junction therein. The semiconductor layers are each separated by a buffer layer in which the composition changes gradually across the thickness so that the lattice mismatch between the semiconductor layers is relieved.