Patents by Inventor Kunio Itoh
Kunio Itoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6810057Abstract: A semiconductor device having a plurality of semiconductor laser elements is provided, which is capable of reducing an interval of emission points between the semiconductor laser elements and also capable of preventing heat generated by a semiconductor laser element from affecting other semiconductor elements. A concave portion is formed on a silicon substrate, and a protrusion of a quadrangular truncated pyramidal shape consisting of slanted faces of a (1 1 1) plane, a (1 {overscore (1)} 1) plane, a ({overscore (1)} {overscore (1)} 1) plane and a ({overscore (1)} 1 1) plane is formed near the center of the concave portion by using the silicon process. Among these slanted faces, a (1 1 1) outer face and a (1 1 1) inner face are determined to be reflecting mirror surfaces.Type: GrantFiled: November 22, 2000Date of Patent: October 26, 2004Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Kunio Itoh, Nobuyuki Uemura, Masaaki Yuri
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Patent number: 6680081Abstract: A conductive powder having an organic silicon polymer layer on the surface of each particle and a metal layer enclosing the silicon polymer layer possesses a stronger bond between the particle base and the metal even at elevated temperature and exhibits a high and stable conductivity and heat resistance.Type: GrantFiled: March 22, 2002Date of Patent: January 20, 2004Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Motoo Fukushima, Kunio Itoh, Shigeru Mori, Masaki Kasashima, Yoshitaka Hamada, Mikio Aramata
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Patent number: 6485831Abstract: A conductive powder having an organic silicon polymer layer on the surface of each particle and a metal layer enclosing the silicon polymer layer possesses a stronger bond between the particle base and the metal even at elevated temperature and exhibits a high and stable conductivity and heat resistance.Type: GrantFiled: May 12, 2000Date of Patent: November 26, 2002Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Motoo Fukushima, Kunio Itoh, Shigeru Mori, Masaki Kasahima, Yoshitaka Hamada, Mikio Aramata
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Publication number: 20020142094Abstract: A conductive powder having an organic silicon polymer layer on the surface of each particle and a metal layer enclosing the silicon polymer layer possesses a stronger bond between the particle base and the metal even at elevated temperature and exhibits a high and stable conductivity and heat resistance.Type: ApplicationFiled: March 22, 2002Publication date: October 3, 2002Applicant: Shin-Etsu Chemical Co., Ltd.Inventors: Motoo Fukushima, Kunio Itoh, Shigeru Mori, Masaki Kasashima, Yoshitaka Hamada, Mikio Aramata
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Patent number: 6358770Abstract: A method for growing nitride semiconductor crystals according to the present invention includes the steps of: a) forming a first metal single crystal layer on a substrate; b) forming a metal nitride single crystal layer by nitrifying the first metal single crystal layer; and c) epitaxially growing a first nitride semiconductor layer on the metal nitride single crystal layer.Type: GrantFiled: January 12, 2001Date of Patent: March 19, 2002Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Kunio Itoh, Masahiro Ishida
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Publication number: 20010005023Abstract: A method for growing nitride semiconductor crystals according to the present invention includes the steps of: a) forming a first metal single crystal layer on a substrate; b) forming a metal nitride single crystal layer by nitrifying the first metal single crystal layer; and c) epitaxially growing a first nitride semiconductor layer on the metal nitride single crystal layer.Type: ApplicationFiled: January 12, 2001Publication date: June 28, 2001Inventors: Kunio Itoh, Masahiro Ishida
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Patent number: 6249534Abstract: The nitride semiconductor laser device of the present invention includes: a nitride semiconductor laser diode; and a protective layer formed on at least one facet of the nitride semiconductor laser diode. The protective layer is made of Al1-x-y-zGaxInyBaN (where 0≦x, y, z≦1 and 0≦x+y+z≦1), which is transparent to light emitted from the laser diode.Type: GrantFiled: April 5, 1999Date of Patent: June 19, 2001Assignee: Matsushita Electronics CorporationInventors: Kunio Itoh, Masaaki Yuri, Tadao Hashimoto, Masahiro Ishida
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Patent number: 6218207Abstract: A method for growing nitride semiconductor crystals according to the present invention includes the steps of: a) forming a first metal single crystal layer on a substrate; b) forming a metal nitride single crystal layer by nitrifying the first metal single crystal layer; and c) epitaxially growing a first nitride semiconductor layer on the metal nitride single crystal layer.Type: GrantFiled: May 25, 1999Date of Patent: April 17, 2001Assignee: Mitsushita Electronics CorporationInventors: Kunio Itoh, Masahiro Ishida
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Patent number: 6006738Abstract: A method for cutting an ingot with a wire. The method includes the steps of moving a wire in a lengthwise direction and contacting an ingot with the moving wire. The method also includes the step of supplying an abrasive slurry containing cutting oil and abrasive particles having an average diameter of about 13 .mu.m to about 15 .mu.m to the ingot when the ingot and the wire are contacting. This results in the ingot being cut with the wire and abrasive particles.Type: GrantFiled: July 16, 1997Date of Patent: December 28, 1999Assignee: MEMC Japan, Ltd.Inventors: Kunio Itoh, Nobutaka Tanaka
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Patent number: 5700899Abstract: A curable silicone composition based on an organopolysiloxane having a cyclotrisiloxane structure quickly cures by brief heating or ultraviolet exposure. It further contains an acid, acid generator, base or base generator or an oniom salt photo-initiator as a curing agent. The cured product has release property from adhesive substance which remains unchanged with the lapse of time and good mold release properties, and thus provides a lightly releasable cured film. The composition is widely used as adhesive tape backing agents, mold release agents, protective coating agents, water and oil repellent agents, and paint base.Type: GrantFiled: August 12, 1996Date of Patent: December 23, 1997Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Shunji Aoki, Toshio Ohba, Yasuaki Hara, Kunio Itoh
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Patent number: 5597853Abstract: A silicone rubber composition comprising an organopolysiloxane and a reinforcing silica filler can be improved in crepe hardening and shelf stability by blending a specific compound as a wetter.Type: GrantFiled: November 7, 1994Date of Patent: January 28, 1997Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Kunio Itoh, Toshio Shinohara, Masaharu Takahashi
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Patent number: 5587334Abstract: A semiconductor laser device of low operating current and low noise for the 780 nm band to be used as the light source for an optical disc and its fabrication method. The device comprises: a certain conduction type Ga.sub.1-Y1 Al.sub.Y1 As first light guide layer, a Ga.sub.1-Y2 Al.sub.Y2 As second light guide layer of said certain conduction type, or an In.sub.0.5 Ga.sub.0.5 P or an In.sub.0.5 (GaAl).sub.0.5 P or an InGaAsP second light guide layer, successively formed one upon another at least in one side of the principal plane of an active layer; an opposite conduction type Ga.sub.1-Z Al.sub.Z As current blocking layer formed on the second light guide layer and provided with a stripe-like window; and a Ga.sub.1-Y3 Al.sub.Y3 As cladding layer of the same conduction type a said light guide layers formed on said stripe-like window, wherein relations of Z>Y3>Y2 and Y1>Y2 are established among Y1, Y2 Y3 and Z that define the AlAs mole-fractions.Type: GrantFiled: August 3, 1994Date of Patent: December 24, 1996Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hiroki Naito, Masahiro Kume, Hideyuki Sugiura, Toru Takayama, Kunio Itoh, Issei Ohta, Hirokazu Shimizu
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Patent number: 5473037Abstract: Disclosed is a method of producing dimethylpolysiloxanes through hydrolysis of dimethyldichlorosilane wherein a water solution containing a water-soluble oxygen-containing organic compound is introduced into dimethyldichlorosilane. Therein, linear dimethylpolysiloxanes alone having both ends blocked with chlorine atoms can be selectively produced by properly controlling the water content in the hydrolysis system and further by rendering the hydrolysis system acidic, and cyclic dimethylpolysiloxanes alone can also be selectively produced by properly controlling the water content in the hydrolysis system and optionally rendering the hydrolysis system acidic.Type: GrantFiled: August 17, 1994Date of Patent: December 5, 1995Assignee: Shin-Etsu Chemical Co. Ltd.Inventors: Kunio Itoh, Toshio Shinohara, Hiroaki Kizaki, Shoichi Tanaka, Yukinori Satou, Kazunobu Umemura
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Patent number: 5386429Abstract: A semiconductor laser device suitable as a light source for an optical disk may be operated at a low operating current with low noise for the 780 nm band. The device comprises: a certain conduction type Ga.sub.1-Y1 Al.sub.Y1 As first light guide layer, a Ga.sub.1-Y2 Al.sub.Y2 As second light guide layer of said certain conduction type, or an In.sub.0.5 Ga.sub.0.5 P or an In.sub.0.5 (GaAl).sub.0.5 P or an InGaAsP second light guide layer, successively formed one upon another at least in one side of the principal plane of an active layer; an opposite conduction type Ga.sub.1-Z Al.sub.Z As current blocking layer formed on the second light guide layer and provided with a stripe-like window; and a Ga.sub.1-Y3 Al.sub.Y3 As cladding layer of the same conduction type as the light guide layers formed on the stripe-like window. The relations of Z>Y3>Y2 and Y1>Y2 define the AlAs mole fractions.Type: GrantFiled: March 31, 1993Date of Patent: January 31, 1995Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Hiroki Naito, Masahiro Kume, Hideyuki Sugiura, Toru Takayama, Kunio Itoh, Issei Ohta, Hirokazu Shimizu
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Patent number: 5367001Abstract: A impression composition comprising:(A) a polyether polymer having at least two alkenyl groups in its molecule,(B) a polyorganohydrogensiloxane having at least three silicon-bonded hydrogen atoms in its molecule,(C) a platinum catalyst,(D) an inorganic filler, and(E) an antioxidant.This composition of has hydrophilic nature and a small cure shrinkage; hence it enables precise impression in a wet environment like in a mouth.Type: GrantFiled: April 9, 1993Date of Patent: November 22, 1994Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Kunio Itoh, Yoshio Inoue, Hironao Fujiki, Masachika Yoshino
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Patent number: 5232997Abstract: An acrylic rubbery polymer having remarkably improved cold resistance can be prepared by modification with an organopolysiloxane by the emulsion copolymerization of a monomeric mixture of two acrylic monomers, of which one is, for example, an alkyl acrylate and the other is an acrylic compound having, in a molecule, at least one ethylenically unsaturated group other than acrylic group in an aqueous emulsion of an organopolysiloxane having a substantial amount of mercapto-substituted monovalent hydrocarbon groups bonded to the silicon atoms.Type: GrantFiled: March 15, 1991Date of Patent: August 3, 1993Assignees: Shin-Etsu Chemical Co., Ltd., Nisshin Chemical Industry Co., Ltd.Inventors: Kunio Itoh, Motoo Fukushima, Toshio Ohba, Hiroyuki Ohata, Harukazu Okuda
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Patent number: 5164442Abstract: The polymeric ingredient of the inventive rubber composition is an acrylic polymer modified with a mercapto-containing organopolysiloxane as prepared by the emulsion polymerization of an acrylic monomer in an aqueous emulsion of the organopolysiloxane. Characteristically, the acrylic monomer is copolymerized with another monomer having an active halogen atom or an epoxy group. By virtue of this unique formulation of the rubbery polymer, the inventive rubber composition prepared by compounding the rubbery polymer with a reinforcing filler and a specified curing or crosslinking agent can be vulcanized to give a vulcanizate having excellent mechanical properties, heat resistance, oil resistance and cold resistance as a combination of the features of silicone rubbers and acrylic rubbers.Type: GrantFiled: April 4, 1990Date of Patent: November 17, 1992Assignees: Shin-Etsu Chemical Company, Ltd., Nissin Chemical Industry Company, Ltd.Inventors: Kunio Itoh, Motoo Fukushima, Tsutomu Nakamura, Hiroyuki Ohata, Harukazu Okuda
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Patent number: 5086127Abstract: Organic silicon compounds comprising in the molecule thereof, a polysilane structural unit: -(R.sup.1 R.sup.2 Si).sub.n - and a structural unit: R.sup.3.sub.a SiO.sub.(4-a)/2 absorb UV in the range of 300-400 nm and are well soluble in organic solvent. These compounds are useful UV absorbers for cosmetic compositions.Type: GrantFiled: January 30, 1990Date of Patent: February 4, 1992Assignee: Shin-Etsu Chemical Co., Ltd.Inventors: Kunio Itoh, Mitsuo Umemura, Eiichi Tabei
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Patent number: 5080917Abstract: A coating agent for delaying the release of a physiologically active substance to be administered per os to ruminants, said coating comprising a veterinary acceptable water-soluble, synthetic high molecular compound and ethylcellulose, said coating agent being stable in the first stomach or rumen of ruminants and capable of being effectively disintegrated for subsequent absorption in the 4th stomach of ruminants, characterized in that said coating agent further comprises at least one substance which is miscible with both of said high molecular weight compound and ethylcellulose and is insoluble in water.Said coating agent forms a coat which protects the active substance from degradation in the first stomach of a ruminant at a pH of about 5.5 and rapidly breaks down in the 4th stomach at a pH of about 3, thereby releasing the active ingredient for absorption by the animal.The coating agent and the actives coated therewith and their preparation are described.Type: GrantFiled: April 3, 1989Date of Patent: January 14, 1992Assignee: Kyowa Hakko Kogyo Kabushiki KaishaInventors: Kunio Itoh, Kiyoshi Sugiyama, Motohiro Ohta
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Patent number: 5068866Abstract: A laser chip is directly disposed on a support member through a mounting arrangement and a support member, the laser chip, and peripheral parts thereof are integrally sealed within a transparent plastic resin. In this structure, without requiring expensive materials and parts, a semiconductor laser apparatus may be manufactured by using the same materials and process as in the ordinary plastic-sealed LED, so that the cost may be reduced significantly.Type: GrantFiled: October 30, 1989Date of Patent: November 26, 1991Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Masaru Wada, Kunio Itoh