Patents by Inventor Kunio Itoh

Kunio Itoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6810057
    Abstract: A semiconductor device having a plurality of semiconductor laser elements is provided, which is capable of reducing an interval of emission points between the semiconductor laser elements and also capable of preventing heat generated by a semiconductor laser element from affecting other semiconductor elements. A concave portion is formed on a silicon substrate, and a protrusion of a quadrangular truncated pyramidal shape consisting of slanted faces of a (1 1 1) plane, a (1 {overscore (1)} 1) plane, a ({overscore (1)} {overscore (1)} 1) plane and a ({overscore (1)} 1 1) plane is formed near the center of the concave portion by using the silicon process. Among these slanted faces, a (1 1 1) outer face and a (1 1 1) inner face are determined to be reflecting mirror surfaces.
    Type: Grant
    Filed: November 22, 2000
    Date of Patent: October 26, 2004
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kunio Itoh, Nobuyuki Uemura, Masaaki Yuri
  • Patent number: 6680081
    Abstract: A conductive powder having an organic silicon polymer layer on the surface of each particle and a metal layer enclosing the silicon polymer layer possesses a stronger bond between the particle base and the metal even at elevated temperature and exhibits a high and stable conductivity and heat resistance.
    Type: Grant
    Filed: March 22, 2002
    Date of Patent: January 20, 2004
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Motoo Fukushima, Kunio Itoh, Shigeru Mori, Masaki Kasashima, Yoshitaka Hamada, Mikio Aramata
  • Patent number: 6485831
    Abstract: A conductive powder having an organic silicon polymer layer on the surface of each particle and a metal layer enclosing the silicon polymer layer possesses a stronger bond between the particle base and the metal even at elevated temperature and exhibits a high and stable conductivity and heat resistance.
    Type: Grant
    Filed: May 12, 2000
    Date of Patent: November 26, 2002
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Motoo Fukushima, Kunio Itoh, Shigeru Mori, Masaki Kasahima, Yoshitaka Hamada, Mikio Aramata
  • Publication number: 20020142094
    Abstract: A conductive powder having an organic silicon polymer layer on the surface of each particle and a metal layer enclosing the silicon polymer layer possesses a stronger bond between the particle base and the metal even at elevated temperature and exhibits a high and stable conductivity and heat resistance.
    Type: Application
    Filed: March 22, 2002
    Publication date: October 3, 2002
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Motoo Fukushima, Kunio Itoh, Shigeru Mori, Masaki Kasashima, Yoshitaka Hamada, Mikio Aramata
  • Patent number: 6358770
    Abstract: A method for growing nitride semiconductor crystals according to the present invention includes the steps of: a) forming a first metal single crystal layer on a substrate; b) forming a metal nitride single crystal layer by nitrifying the first metal single crystal layer; and c) epitaxially growing a first nitride semiconductor layer on the metal nitride single crystal layer.
    Type: Grant
    Filed: January 12, 2001
    Date of Patent: March 19, 2002
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Kunio Itoh, Masahiro Ishida
  • Publication number: 20010005023
    Abstract: A method for growing nitride semiconductor crystals according to the present invention includes the steps of: a) forming a first metal single crystal layer on a substrate; b) forming a metal nitride single crystal layer by nitrifying the first metal single crystal layer; and c) epitaxially growing a first nitride semiconductor layer on the metal nitride single crystal layer.
    Type: Application
    Filed: January 12, 2001
    Publication date: June 28, 2001
    Inventors: Kunio Itoh, Masahiro Ishida
  • Patent number: 6249534
    Abstract: The nitride semiconductor laser device of the present invention includes: a nitride semiconductor laser diode; and a protective layer formed on at least one facet of the nitride semiconductor laser diode. The protective layer is made of Al1-x-y-zGaxInyBaN (where 0≦x, y, z≦1 and 0≦x+y+z≦1), which is transparent to light emitted from the laser diode.
    Type: Grant
    Filed: April 5, 1999
    Date of Patent: June 19, 2001
    Assignee: Matsushita Electronics Corporation
    Inventors: Kunio Itoh, Masaaki Yuri, Tadao Hashimoto, Masahiro Ishida
  • Patent number: 6218207
    Abstract: A method for growing nitride semiconductor crystals according to the present invention includes the steps of: a) forming a first metal single crystal layer on a substrate; b) forming a metal nitride single crystal layer by nitrifying the first metal single crystal layer; and c) epitaxially growing a first nitride semiconductor layer on the metal nitride single crystal layer.
    Type: Grant
    Filed: May 25, 1999
    Date of Patent: April 17, 2001
    Assignee: Mitsushita Electronics Corporation
    Inventors: Kunio Itoh, Masahiro Ishida
  • Patent number: 6006738
    Abstract: A method for cutting an ingot with a wire. The method includes the steps of moving a wire in a lengthwise direction and contacting an ingot with the moving wire. The method also includes the step of supplying an abrasive slurry containing cutting oil and abrasive particles having an average diameter of about 13 .mu.m to about 15 .mu.m to the ingot when the ingot and the wire are contacting. This results in the ingot being cut with the wire and abrasive particles.
    Type: Grant
    Filed: July 16, 1997
    Date of Patent: December 28, 1999
    Assignee: MEMC Japan, Ltd.
    Inventors: Kunio Itoh, Nobutaka Tanaka
  • Patent number: 5700899
    Abstract: A curable silicone composition based on an organopolysiloxane having a cyclotrisiloxane structure quickly cures by brief heating or ultraviolet exposure. It further contains an acid, acid generator, base or base generator or an oniom salt photo-initiator as a curing agent. The cured product has release property from adhesive substance which remains unchanged with the lapse of time and good mold release properties, and thus provides a lightly releasable cured film. The composition is widely used as adhesive tape backing agents, mold release agents, protective coating agents, water and oil repellent agents, and paint base.
    Type: Grant
    Filed: August 12, 1996
    Date of Patent: December 23, 1997
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Shunji Aoki, Toshio Ohba, Yasuaki Hara, Kunio Itoh
  • Patent number: 5597853
    Abstract: A silicone rubber composition comprising an organopolysiloxane and a reinforcing silica filler can be improved in crepe hardening and shelf stability by blending a specific compound as a wetter.
    Type: Grant
    Filed: November 7, 1994
    Date of Patent: January 28, 1997
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Kunio Itoh, Toshio Shinohara, Masaharu Takahashi
  • Patent number: 5587334
    Abstract: A semiconductor laser device of low operating current and low noise for the 780 nm band to be used as the light source for an optical disc and its fabrication method. The device comprises: a certain conduction type Ga.sub.1-Y1 Al.sub.Y1 As first light guide layer, a Ga.sub.1-Y2 Al.sub.Y2 As second light guide layer of said certain conduction type, or an In.sub.0.5 Ga.sub.0.5 P or an In.sub.0.5 (GaAl).sub.0.5 P or an InGaAsP second light guide layer, successively formed one upon another at least in one side of the principal plane of an active layer; an opposite conduction type Ga.sub.1-Z Al.sub.Z As current blocking layer formed on the second light guide layer and provided with a stripe-like window; and a Ga.sub.1-Y3 Al.sub.Y3 As cladding layer of the same conduction type a said light guide layers formed on said stripe-like window, wherein relations of Z>Y3>Y2 and Y1>Y2 are established among Y1, Y2 Y3 and Z that define the AlAs mole-fractions.
    Type: Grant
    Filed: August 3, 1994
    Date of Patent: December 24, 1996
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hiroki Naito, Masahiro Kume, Hideyuki Sugiura, Toru Takayama, Kunio Itoh, Issei Ohta, Hirokazu Shimizu
  • Patent number: 5473037
    Abstract: Disclosed is a method of producing dimethylpolysiloxanes through hydrolysis of dimethyldichlorosilane wherein a water solution containing a water-soluble oxygen-containing organic compound is introduced into dimethyldichlorosilane. Therein, linear dimethylpolysiloxanes alone having both ends blocked with chlorine atoms can be selectively produced by properly controlling the water content in the hydrolysis system and further by rendering the hydrolysis system acidic, and cyclic dimethylpolysiloxanes alone can also be selectively produced by properly controlling the water content in the hydrolysis system and optionally rendering the hydrolysis system acidic.
    Type: Grant
    Filed: August 17, 1994
    Date of Patent: December 5, 1995
    Assignee: Shin-Etsu Chemical Co. Ltd.
    Inventors: Kunio Itoh, Toshio Shinohara, Hiroaki Kizaki, Shoichi Tanaka, Yukinori Satou, Kazunobu Umemura
  • Patent number: 5386429
    Abstract: A semiconductor laser device suitable as a light source for an optical disk may be operated at a low operating current with low noise for the 780 nm band. The device comprises: a certain conduction type Ga.sub.1-Y1 Al.sub.Y1 As first light guide layer, a Ga.sub.1-Y2 Al.sub.Y2 As second light guide layer of said certain conduction type, or an In.sub.0.5 Ga.sub.0.5 P or an In.sub.0.5 (GaAl).sub.0.5 P or an InGaAsP second light guide layer, successively formed one upon another at least in one side of the principal plane of an active layer; an opposite conduction type Ga.sub.1-Z Al.sub.Z As current blocking layer formed on the second light guide layer and provided with a stripe-like window; and a Ga.sub.1-Y3 Al.sub.Y3 As cladding layer of the same conduction type as the light guide layers formed on the stripe-like window. The relations of Z>Y3>Y2 and Y1>Y2 define the AlAs mole fractions.
    Type: Grant
    Filed: March 31, 1993
    Date of Patent: January 31, 1995
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Hiroki Naito, Masahiro Kume, Hideyuki Sugiura, Toru Takayama, Kunio Itoh, Issei Ohta, Hirokazu Shimizu
  • Patent number: 5367001
    Abstract: A impression composition comprising:(A) a polyether polymer having at least two alkenyl groups in its molecule,(B) a polyorganohydrogensiloxane having at least three silicon-bonded hydrogen atoms in its molecule,(C) a platinum catalyst,(D) an inorganic filler, and(E) an antioxidant.This composition of has hydrophilic nature and a small cure shrinkage; hence it enables precise impression in a wet environment like in a mouth.
    Type: Grant
    Filed: April 9, 1993
    Date of Patent: November 22, 1994
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Kunio Itoh, Yoshio Inoue, Hironao Fujiki, Masachika Yoshino
  • Patent number: 5232997
    Abstract: An acrylic rubbery polymer having remarkably improved cold resistance can be prepared by modification with an organopolysiloxane by the emulsion copolymerization of a monomeric mixture of two acrylic monomers, of which one is, for example, an alkyl acrylate and the other is an acrylic compound having, in a molecule, at least one ethylenically unsaturated group other than acrylic group in an aqueous emulsion of an organopolysiloxane having a substantial amount of mercapto-substituted monovalent hydrocarbon groups bonded to the silicon atoms.
    Type: Grant
    Filed: March 15, 1991
    Date of Patent: August 3, 1993
    Assignees: Shin-Etsu Chemical Co., Ltd., Nisshin Chemical Industry Co., Ltd.
    Inventors: Kunio Itoh, Motoo Fukushima, Toshio Ohba, Hiroyuki Ohata, Harukazu Okuda
  • Patent number: 5164442
    Abstract: The polymeric ingredient of the inventive rubber composition is an acrylic polymer modified with a mercapto-containing organopolysiloxane as prepared by the emulsion polymerization of an acrylic monomer in an aqueous emulsion of the organopolysiloxane. Characteristically, the acrylic monomer is copolymerized with another monomer having an active halogen atom or an epoxy group. By virtue of this unique formulation of the rubbery polymer, the inventive rubber composition prepared by compounding the rubbery polymer with a reinforcing filler and a specified curing or crosslinking agent can be vulcanized to give a vulcanizate having excellent mechanical properties, heat resistance, oil resistance and cold resistance as a combination of the features of silicone rubbers and acrylic rubbers.
    Type: Grant
    Filed: April 4, 1990
    Date of Patent: November 17, 1992
    Assignees: Shin-Etsu Chemical Company, Ltd., Nissin Chemical Industry Company, Ltd.
    Inventors: Kunio Itoh, Motoo Fukushima, Tsutomu Nakamura, Hiroyuki Ohata, Harukazu Okuda
  • Patent number: 5086127
    Abstract: Organic silicon compounds comprising in the molecule thereof, a polysilane structural unit: -(R.sup.1 R.sup.2 Si).sub.n - and a structural unit: R.sup.3.sub.a SiO.sub.(4-a)/2 absorb UV in the range of 300-400 nm and are well soluble in organic solvent. These compounds are useful UV absorbers for cosmetic compositions.
    Type: Grant
    Filed: January 30, 1990
    Date of Patent: February 4, 1992
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Kunio Itoh, Mitsuo Umemura, Eiichi Tabei
  • Patent number: 5080917
    Abstract: A coating agent for delaying the release of a physiologically active substance to be administered per os to ruminants, said coating comprising a veterinary acceptable water-soluble, synthetic high molecular compound and ethylcellulose, said coating agent being stable in the first stomach or rumen of ruminants and capable of being effectively disintegrated for subsequent absorption in the 4th stomach of ruminants, characterized in that said coating agent further comprises at least one substance which is miscible with both of said high molecular weight compound and ethylcellulose and is insoluble in water.Said coating agent forms a coat which protects the active substance from degradation in the first stomach of a ruminant at a pH of about 5.5 and rapidly breaks down in the 4th stomach at a pH of about 3, thereby releasing the active ingredient for absorption by the animal.The coating agent and the actives coated therewith and their preparation are described.
    Type: Grant
    Filed: April 3, 1989
    Date of Patent: January 14, 1992
    Assignee: Kyowa Hakko Kogyo Kabushiki Kaisha
    Inventors: Kunio Itoh, Kiyoshi Sugiyama, Motohiro Ohta
  • Patent number: 5068866
    Abstract: A laser chip is directly disposed on a support member through a mounting arrangement and a support member, the laser chip, and peripheral parts thereof are integrally sealed within a transparent plastic resin. In this structure, without requiring expensive materials and parts, a semiconductor laser apparatus may be manufactured by using the same materials and process as in the ordinary plastic-sealed LED, so that the cost may be reduced significantly.
    Type: Grant
    Filed: October 30, 1989
    Date of Patent: November 26, 1991
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Masaru Wada, Kunio Itoh