Patents by Inventor Kunio Kimura
Kunio Kimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240032372Abstract: A display apparatus includes a first pixel, a second pixel, a third pixel, and a fourth pixel. The first pixel includes a first light-emitting device and a first layer. The first light-emitting device emits first light toward the first layer. An emission spectrum of the first light has an intensity in a blue-light wavelength range and an intensity in a green-light wavelength range. The first light contains a color conversion material converting blue and green light into red light. The second pixel includes a second light-emitting device and a second layer. The second light-emitting device emits second light toward the second layer. The second layer has a function of transmitting blue light. The third pixel includes a third light-emitting device and a third layer. The third light-emitting device emits third light toward the third layer. The third layer has a function of absorbing blue light and transmitting green light. The fourth pixel includes a fourth light-emitting device and a fourth layer.Type: ApplicationFiled: July 14, 2023Publication date: January 25, 2024Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hajime KIMURA, Kunio KIMURA, Takuya KAWATA
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Patent number: 10468531Abstract: One object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. Another object is to manufacture a highly reliable semiconductor device in a high yield. In a top-gate staggered transistor including an oxide semiconductor film, as a first gate insulating film in contact with the oxide semiconductor film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon fluoride and oxygen; and as a second gate insulating film stacked over the first gate insulating film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon hydride and oxygen.Type: GrantFiled: October 14, 2016Date of Patent: November 5, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kunio Kimura, Mitsuhiro Ichijo, Toshiya Endo
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Patent number: 10276089Abstract: An electronic device includes a display portion, an imaging portion, a control portion, an input portion, and a sensor portion. The display portion has a first display element that reflects visible light and a second display element that emits visible light. The display portion has a function of displaying an image using one of or both first light reflected by the first display element and second light emitted from the second display element. The imaging portion takes an image of an object, the control portion controls the display portion and the imaging portion, the input portion inputs a signal for controlling the display portion and the imaging portion to the control portion, and the sensor portion outputs sensing data to the control portion, in consideration of illuminance of external light. Such a display device increases the display quality, or keeps high-quality display regardless of environmental conditions and reduces power consumption.Type: GrantFiled: June 26, 2017Date of Patent: April 30, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Minoru Takahashi, Kunio Kimura, Rihito Wada
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Publication number: 20180005567Abstract: An electronic device includes a display portion, an imaging portion, a control portion, an input portion, and a sensor portion. The display portion has a first display element that reflects visible light and a second display element that emits visible light. The display portion has a function of displaying an image using one of or both first light reflected by the first display element and second light emitted from the second display element. The imaging portion takes an image of an object, the control portion controls the display portion and the imaging portion, the input portion inputs a signal for controlling the display portion and the imaging portion to the control portion, and the sensor portion outputs sensing data to the control portion, in consideration of illuminance of external light. Such a display device increases the display quality, or keeps high-quality display regardless of environmental conditions and reduces power consumption.Type: ApplicationFiled: June 26, 2017Publication date: January 4, 2018Inventors: Minoru TAKAHASHI, Kunio KIMURA, Rihito WADA
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Patent number: 9595732Abstract: A square lithium secondary battery includes a wound body in which a collective sheet in which a positive electrode sheet and a negative electrode sheet overlap each other with a first separator interposed therebetween is wound while a second separator is put inside the collective sheet. An active material mixture layer on one or both surfaces of at least one of the positive electrode sheet and the negative electrode sheet includes a region with a plurality of openings and a region with no opening. At least a bent portion of the collective sheet is covered with the region with the plurality of openings.Type: GrantFiled: February 5, 2016Date of Patent: March 14, 2017Assignee: Semiconductor Energy Laboratory Co., LTD.Inventors: Kunio Hosoya, Kunio Kimura
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Publication number: 20170033234Abstract: One object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. Another object is to manufacture a highly reliable semiconductor device in a high yield. In a top-gate staggered transistor including an oxide semiconductor film, as a first gate insulating film in contact with the oxide semiconductor film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon fluoride and oxygen; and as a second gate insulating film stacked over the first gate insulating film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon hydride and oxygen.Type: ApplicationFiled: October 14, 2016Publication date: February 2, 2017Inventors: Kunio KIMURA, Mitsuhiro ICHIJO, Toshiya ENDO
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Patent number: 9490368Abstract: One object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. Another object is to manufacture a highly reliable semiconductor device in a high yield. In a top-gate staggered transistor including an oxide semiconductor film, as a first gate insulating film in contact with the oxide semiconductor film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon fluoride and oxygen; and as a second gate insulating film stacked over the first gate insulating film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon hydride and oxygen.Type: GrantFiled: May 3, 2011Date of Patent: November 8, 2016Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Kunio Kimura, Mitsuhiro Ichijo, Toshiya Endo
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Publication number: 20160156061Abstract: A square lithium secondary battery includes a wound body in which a collective sheet in which a positive electrode sheet and a negative electrode sheet overlap each other with a first separator interposed therebetween is wound while a second separator is put inside the collective sheet. An active material mixture layer on one or both surfaces of at least one of the positive electrode sheet and the negative electrode sheet includes a region with a plurality of openings and a region with no opening. At least a bent portion of the collective sheet is covered with the region with the plurality of openings.Type: ApplicationFiled: February 5, 2016Publication date: June 2, 2016Inventors: Kunio HOSOYA, Kunio KIMURA
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Patent number: 9281543Abstract: A square lithium secondary battery includes a wound body in which a collective sheet in which a positive electrode sheet and a negative electrode sheet overlap each other with a first separator interposed therebetween is wound while a second separator is put inside the collective sheet. An active material mixture layer on one or both surfaces of at least one of the positive electrode sheet and the negative electrode sheet includes a region with a plurality of openings and a region with no opening. At least a bent portion of the collective sheet is covered with the region with the plurality of openings.Type: GrantFiled: December 23, 2014Date of Patent: March 8, 2016Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Kunio Hosoya, Kunio Kimura
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Publication number: 20150111078Abstract: A square lithium secondary battery includes a wound body in which a collective sheet in which a positive electrode sheet and a negative electrode sheet overlap each other with a first separator interposed therebetween is wound while a second separator is put inside the collective sheet. An active material mixture layer on one or both surfaces of at least one of the positive electrode sheet and the negative electrode sheet includes a region with a plurality of openings and a region with no opening. At least a bent portion of the collective sheet is covered with the region with the plurality of openings.Type: ApplicationFiled: December 23, 2014Publication date: April 23, 2015Inventors: Kunio HOSOYA, Kunio KIMURA
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Patent number: 8927127Abstract: A square lithium secondary battery includes a wound body in which a collective sheet in which a positive electrode sheet and a negative electrode sheet overlap each other with a first separator interposed therebetween is wound while a second separator is put inside the collective sheet. An active material mixture layer on one or both surfaces of at least one of the positive electrode sheet and the negative electrode sheet includes a region with a plurality of openings and a region with no opening. At least a bent portion of the collective sheet is covered with the region with the plurality of openings.Type: GrantFiled: November 30, 2012Date of Patent: January 6, 2015Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kunio Hosoya, Kunio Kimura
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Publication number: 20110284959Abstract: One object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. Another object is to manufacture a highly reliable semiconductor device in a high yield. In a top-gate staggered transistor including an oxide semiconductor film, as a first gate insulating film in contact with the oxide semiconductor film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon fluoride and oxygen; and as a second gate insulating film stacked over the first gate insulating film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon hydride and oxygen.Type: ApplicationFiled: May 3, 2011Publication date: November 24, 2011Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Kunio KIMURA, Mitsuhiro ICHIJO, Toshiya ENDO
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Patent number: 7704913Abstract: A visible-light-responsive three-dimensional fine cell-structured photocatalytic filter in accordance with the present invention includes a sponge-like porous structure (B) containing an anatase-type titanium oxide coating formed on a surface of a sponge-like porous structural body (A) which has a porosity of 85 vol % or more.Type: GrantFiled: April 22, 2004Date of Patent: April 27, 2010Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Eiji Tani, Kunio Kimura
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Publication number: 20070144961Abstract: A visible-light-responsive three-dimensional fine cell-structured photocatalytic filter in accordance with the present invention includes a sponge-like porous structure (B) containing an anatase-type titanium oxide coating formed on a surface of a sponge-like porous structural body (A) which has a porosity of 85 vol % or more.Type: ApplicationFiled: April 22, 2004Publication date: June 28, 2007Applicant: National Institute of Advanced Industrial ScienceInventors: Eiji Tani, Kunio Kimura
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Patent number: 6506872Abstract: A novel polycyanoaryl ether exhibiting excellent heat-resistance, hydrolysis-resistance and weatherability, as well as industrially high general-purpose properties, and the method for the production thereof is to be provided. The polycyanoaryl ether of this invention is represented by the formula (1): wherein R1 stands for a substituted or unsubstituted alkyl group of 1 to 12 carbon atoms, a substituted or unsubstituted alkoxy group of 1 to 12 carbon atoms, a substituted or unsubstituted alkylamino group of 1 to 12 carbon atoms, a substituted or unsubstituted alkylthio group of 1 to 12 carbon atoms, a substituted or unsubstituted aryl group of 6 to 20 carbon atoms, a substituted or unsubstituted aryloxy group of 6 to 20 carbon atoms, a substituted or unsubstituted arylamino group of 6 to 20 carbon atoms, or a substituted or unsubstituted arylthio group of 6 to 20 carbon atoms; R2 stands for a divalent organic group; and n stands for a degree of polymerization.Type: GrantFiled: April 25, 2001Date of Patent: January 14, 2003Assignee: Nippon Shokubai Co., Ltd.Inventors: Kunio Kimura, Yuhiko Yamashita, Yasunori Okumura, Shoji Ito
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Publication number: 20020007039Abstract: A novel polycyanoaryl ether exhibiting excellent heat-resistance, hydrolysis-resistance and weatherability, as well as industrially high general-purpose properties, and the method for the production thereof is to be provided.Type: ApplicationFiled: April 25, 2001Publication date: January 17, 2002Inventors: Kunio Kimura, Yuhiko Yamashita, Yasunori Okumura, Shoji Ito
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Publication number: 20010019810Abstract: Phase-change type, reversible optical information recording medium, being possible for recording, reproducing, erasing, and rewriting of information, by use of a laser beam. This invention consists of recording thin film of ternary elements, for example, containing Ge, Te, Sb/or Bi or quaternary elements containing the fourth element of Se with which a part of Te is replaced, which is established on such surface—flat substrates as glass or plastics. In this case, the component ratio of Te and Se is selected not to be excess for other elements, such as Ge, Sb/or Bi so as to be fixed as stable compounds of stoichiometric compositions of GeTe, Sb2Te3/or Bi2Te3, or GeSe, Sb2Se3/Bi2Se3 when crystallized. Strictly speaking, a concentration of each component is selected to have proper ratio of the number of atomes each other so as to represent whole composition as the sum of each component. By this treatment, it is possible to have high crystallization speed and long cyclability of recording/erasing.Type: ApplicationFiled: January 22, 2001Publication date: September 6, 2001Inventors: Noboru Yamada, Kunio Kimura, Masatoshi Takao, Susumu Sanai
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Patent number: 6268107Abstract: Phase-change type, reversible optical information recording medium, being possible for recording, reproducing, erasing, and rewriting of information, by use of a laser beam. This invention, consists of recording thin film of ternary elements, for example, containing Ge, Te, Sb/or Bi or quaternary elements containing the fourth element of Se with which a part of Te is replaced, which is established on such surface—flat substrates as glass or plastics. In this case, the component ratio of Te and Se is selected not to be excess for other elements, such as Ge, Sb/or Bi so as to be fixed as stable compounds of stoichiometric compositions of GeTe, Sb2Te3/or Bi2Te3, or GeSe, Sb2Se3/Bi2Se3 when crystallized. Strictly speaking, a concentration of each component is selected to have proper ratio of the number of atoms each other so as to represent whole composition as the sum of each component. By this treatment, it is possible to have high crystallization speed and long cyclability of recording/erasing.Type: GrantFiled: April 28, 1993Date of Patent: July 31, 2001Assignee: Matsushita Electric Industrial Co., Ltd.Inventors: Noboru Yamada, Kunio Kimura, Masatoshi Takao, Susumu Sanai
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Patent number: 6172181Abstract: A (2,3,4,5,6-pentafluorobenzoyl)diphenyl ether compound represented by the formula (I): wherein R stands for a hydroxyl group or a group represented by ether ketone polymer represented by the formula (II): wherein n stands for a degree of polymerization, m is an integer of 0 or 1, and R1 stands for a group represented by the formula (III): wherein p is an integer 0 or 1 and R2 stands forType: GrantFiled: July 16, 1999Date of Patent: January 9, 2001Assignee: Nippon Shokubai Co., Ltd.Inventors: Kunio Kimura, Yuhiko Yamashita, Patrick E. Cassidy, John W. Fitch, III, V. Sreenivasulu Reddy
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Patent number: RE42222Abstract: Phase-change type, reversible optical information recording medium, being possible for recording, reproducing, erasing, and rewriting of information, by use of a laser beam. This invention, consists of recording thin film of ternary elements, for example, containing Ge, Te, Sb/or Bi or quaternary elements containing the fourth element of Se with which a part of Te is replaced, which is established on such surface—flat substrates as glass or plastics. In this case, the component ratio of Te and Se is selected not to be excess for other elements, such as Ge, Sb/or Bi so as to be fixed as stable compounds of stoichiometric compositions of GeTe, Sb2Te3/or Bi2Te3, or GeSe, Sb2Se3/Bi2Se3 when crystallized. Strictly speaking, a concentration of each component is selected to have proper ratio of the number of atoms each other so as to represent whole composition as the sum of each component. By this treatment, it is possible to have high crystallization speed and long cyclability of recording/erasing.Type: GrantFiled: March 14, 2003Date of Patent: March 15, 2011Assignee: Matsushita Electronic Industrial Co., Ltd.Inventors: Norboru Yamada, Kunio Kimura, Masatoshi Takao, Susumu Sanai