Abstract: An assembly of nanoparticles includes metal oxide, the nanoparticles including zinc (Zn) and silicon (Si). In addition, the nanoparticles have an atomic ratio of Zn/(Zn+Si) in a range of 0.3 to 0.95. Further, the nanoparticles have an equivalent circular particle diameter in a range of 1 nm to 20 nm.

Abstract: An oxide-based semiconductor compound including metal cations and oxygen, wherein hydride ions H? originally bonded with the metal cations have been replaced with fluorine ions F? and at least one of the fluorine ions F? is bonded with one to three of the metal cations.

Abstract: A thin film transistor of a top-gate-coplanar type includes a source, a drain, a gate, and a semiconductor layer, wherein the semiconductor layer has a first low-resistance region for the source and a second low-resistance region for the drain, wherein the source and the drain are electrically connected through the first low-resistance region, the semiconductor layer, and the second low-resistance region, and wherein the semiconductor layer is formed of an oxide-based semiconductor containing gallium (Ga), zinc (Zn), and tin (Sn).

Abstract: The present invention provides transparent conductive oxide (TCO) thin films with improved optical and electrical properties and methods of making the same. More specifically, the invention provides on-line processes for producing TCO thin films that allow for improvements in optical properties and post-production improvements in electrical properties of the TCO.

Abstract: The present invention provides for cost-efficient methods for on-line deposition of semi-conducting metallic layers. More specifically, the present invention provides on-line pyrolytic deposition methods for deposition of p-type, n-type and i-type semi-conducting metallic layers in the float glass production process. Furthermore, the present invention provides for on-line pyrolytic deposition methods for production of single-, double-, triple- and multi-junction p-(i-)n and n-(i-)p type semi-conducting metal layers. Such p-type, n-type and i-type semi-conducting metal layers are useful in the photovoltaic industry and attractive to manufacturers of photovoltaic modules as “value-added” products.

Abstract: In one mode of the present invention, there is provided an organic EL display device, which includes an organic light emitting layer provided between sets of electrodes, comprising color filters 22 and an overcoat layer 23 provided on a substrate 21; an inorganic solid layer 24 provided on the overcoat layer 23; a first set of transparent electrodes 25 provided on the inorganic solid layer 24; a light emitting layer 27 provided on the first set of electrodes 25; and a second set of electrodes 28 formed on the light emitting layer 27; wherein the inorganic solid layer 24 has routes for moisture passage formed in regions between adjacent electrodes of the first set so as to be uniform over an entire active area.

Abstract: The present invention provides for cost-efficient methods for on-line deposition of semi-conducting metallic layers. More specifically, the present invention provides on-line pyrolytic deposition methods for deposition of p-type, n-type and i-type semi-conducting metallic layers in the float glass production process. Furthermore, the present invention provides for on-line pyrolytic deposition methods for production of single-, double-, triple- and multi-junction p-(i-)n and n-(i-)p type semi-conducting metal layers. Such p-type, n-type and i-type semi-conducting metal layers are useful in the photovoltaic industry and attractive to manufacturers of photovoltaic modules as “value-added” products.

Abstract: The present invention provides transparent conductive oxide (TCO) thin films with improved optical and electrical properties and methods of making the same. More specifically, the invention provides on-line processes for producing TCO thin films that allow for improvements in optical properties and post-production improvements in electrical properties of the TCO.

Abstract: An organic EL display device includes color filters 102, an overcoat layer 103 and an inorganic solid layer 104 disposed on a substrate 101; a first electrodes 105, an organic film 107 and a second electrodes 108 disposed on the inorganic solid layer 104; an insulating layer 106 disposed so as to cover edge portions of the first electrodes. The organic EL display device can improve production yield and restrain visual failure from being caused with the lapse of time by including a protection layer 109 so as to prevent the inorganic solid layer 104 from being damaged.

Abstract: In one mode of the present invention, there is provided an organic EL display device, which includes an organic light emitting layer provided between sets of electrodes, comprising color filters 22 and an overcoat layer 23 provided on a substrate 21; an inorganic solid layer 24 provided on the overcoat layer 23; a first set of transparent electrodes 25 provided on the inorganic solid layer 24; a light emitting layer 27 provided on the first set of electrodes 25; and a second set of electrodes 28 formed on the light emitting layer 27; wherein the inorganic solid layer 24 has routes for moisture passage formed in regions between adjacent electrodes of the first set so as to be uniform over an entire active area.

Abstract: An organic EL display device includes color filters 102, an overcoat layer 103 and an inorganic solid layer 104 disposed on a substrate 101; a first electrodes 105, an organic film 107 and a second electrodes 108 disposed on the inorganic solid layer 104; an insulating layer 106 disposed so as to cover edge portions of the first electrodes. The organic EL display device can improve production yield and restrain visual failure from being caused with the lapse of time by including a protection layer 109 so as to prevent the inorganic solid layer 104 from being damaged.

Abstract: In one mode of the present invention, there is provided an organic EL display device, which includes an organic light emitting layer provided between sets of electrodes, comprising color filters 22 and an overcoat layer 23 provided on a substrate 21; an inorganic solid layer 24 provided on the overcoat layer 23; a first set of transparent electrodes 25 provided on the inorganic solid layer 24; a light emitting layer 27 provided on the first set of electrodes 25; and a second set of electrodes 28 formed on the light emitting layer 27; wherein the inorganic solid layer 24 has routes for moisture passage formed in regions between adjacent electrodes of the first set so as to be uniform over an entire active area.

Abstract: Coating of a substrate with an organic material, which is characterized in that it comprises liquefying by pressurization a medium which is gaseous at ordinary temperature under 1 atom and liquefies at ordinary temperature under a pressure of 100 atom or less, dissolving or dispersing an organic material in the liquefied medium, and spraying the resulting material mixture onto a substrate in an inert gas atmosphere or comprises bringing a medium having a critical temperature of ordinary temperature or lower and a critical pressure of 100 atm or less into a supercritical state, dissolving or dispersing an organic material in the medium, and spraying the resulting material mixture onto a substrate in an inert gas atmosphere.

Abstract: A polycrystalline semiconductor thin film formed in a stripe shape on an insulating substrate wherein crystal particles are arranged in a line-texture form in a longitudinal direction of a stripe; an electric field effect mobility .nu..sub.L in a longitudinal direction of a stripe is different from an electric field effect mobility .nu..sub.S in a width direction of the stripe, and .nu..sub.L .gtoreq.1.5.multidot..nu..sub.S is satisfied.

Abstract: A process for preparing a polycrystalline semiconductor thin film transistor wherein a non-singlecrystalline semiconductor formed on a transparent insulating substrate is annealed by laser beams, such process comprising forming a gate insulation layer and a gate electrode on the non-singlecrystalline semiconductor; implanting impurity ions into a source-drain region of the semiconductor wherein the gate electrode is used as a mask, and irradiating laser beams from the rear surface side of the transparent insulating substrate to thereby polycrystallize the non-singlecrystalline semiconductor under the gate electrode or improve the crystallinity of the semiconductor without causing the non-singlecrystalline semiconductor in a completely molten state.