Abstract: A driving apparatus including: gate driving circuit to drive gates of a first semiconductor element and a second semiconductor element connected in series between a positive side power supply line and a negative side power supply line; a first timing generating circuit to generate a first timing signal when voltage applied to the second semiconductor element becomes reference voltage during a turn-off period of the first semiconductor element; and a first driving condition change circuit, wherein the gate driving circuit relaxes change in a charge amount of the gate of the first semiconductor element, according to the first timing signal.

Abstract: A gate drive apparatus including a gate drive unit configured to drive a gate of a switching device, a peak detection unit configured to detect that a voltage across main terminals applied between the main terminals of the switching device during a turn-off period of the switching device is at a peak, and a driving condition changing unit configured to increase a change speed of a gate voltage of the switching device caused by the gate drive unit, in response to a detection that the voltage across main terminals is at a peak.

Abstract: A gate driver includes: a drive circuit configured to drive, in accordance with an input signal that commands to turn on/off a switching element connected between high and low power supply potential parts, a gate of the switching element; a time storage circuit configured to store a time length from when the input signal is switched to an on command to when a recovery surge voltage generated by a diode that is opposite to the switching element is detected; a switching determination circuit configured to determine, in accordance with a detected value of a power supply voltage, whether to switch a gate driving condition; and a driving condition change circuit configured to change, in accordance with a determination result of the switching determination circuit, the gate driving condition at a time of current turn-on by the time length stored at a time of previous turn-on.

Abstract: A gate drive apparatus is provided. The gate drive apparatus includes a gate drive unit configured to drive a gate of a switching device; a parameter measuring unit configured to measure a parameter corresponding to current flowing through the switching device; a discrepancy detection unit configured to detect discrepancy between current flowing through the switching device during an on-state of the switching device and a reference value, based on the parameter; and a control unit that, if the discrepancy is not detected, switches a change speed of a gate voltage of the switching device at a timing when a reference time has elapsed since a turn-off start of the switching device during a next turn-off time period of the switching device, and if the discrepancy is detected, keeps the change speed of the gate voltage during the next turn-off time period of the switching device.

Abstract: A driving apparatus including: gate driving circuit to drive gates of a first semiconductor element and a second semiconductor element connected in series between a positive side power supply line and a negative side power supply line; a first timing generating circuit to generate a first timing signal when voltage applied to the second semiconductor element becomes reference voltage during a turn-off period of the first semiconductor element; and a first driving condition change circuit, wherein the gate driving circuit relaxes change in a charge amount of the gate of the first semiconductor element, according to the first timing signal.

Abstract: A gate driver for driving a gate of a switching element in accordance with an input signal is provided. The gate driver is configured to change a gate driving condition in accordance with a detected value of power supply voltage. Each time when the switching element is turned off, the gate driver stores a time width from a time when the input signal is switched to an off command to a time when switch-off surge occurs in the switching device. If it is determined that the gate driving condition should be changed during turn-off operation of the switching element, the gate driver switches the gate driving condition when a time corresponding to the time width stored at a previous turn-off is elapsed after a current turn-off of the switching element is started.

Abstract: A gate driver includes: a timing determination unit configured to measure an on-time of a switching element and configured to determine, based on the on-time, a certain timing during a turn-off period of the switching element as an intermediate timing; and a driving condition changing unit configured to change a gate driving condition of the switching element at the intermediate timing determined by the timing determination unit.

Abstract: Provided is a driving apparatus that includes a gate driving circuit that turns off a first semiconductor element upon receiving a turn-off signal, a measuring circuit that measures a parameter according to a voltage applied to the second semiconductor element, a timing generating circuit that generates a timing signal if the parameter satisfies a first condition during a time period in which the first semiconductor element is tuned off; and a driving condition change circuit that, in response to the timing signal, further decreases a changing speed of a gate voltage of the first semiconductor element than a reference speed during the time period in which the first semiconductor element is tuned off, wherein the gate driving circuit turns off the first semiconductor element in response to that the parameter satisfies a second condition during a time period in which the first semiconductor element is tuned on.

Abstract: A gate drive apparatus is provided. The gate drive apparatus includes a gate drive unit configured to drive a gate of a switching device; a parameter measuring unit configured to measure a parameter corresponding to current flowing through the switching device; a discrepancy detection unit configured to detect discrepancy between current flowing through the switching device during an on-state of the switching device and a reference value, based on the parameter; and a control unit that, if the discrepancy is not detected, switches a change speed of a gate voltage of the switching device at a timing when a reference time has elapsed since a turn-off start of the switching device during a next turn-off time period of the switching device, and if the discrepancy is detected, keeps the change speed of the gate voltage during the next turn-off time period of the switching device.

Abstract: A gate drive apparatus is provided. The gate drive apparatus includes a gate drive unit configured to drive a gate of a switching device; a parameter measuring unit configured to measure a parameter corresponding to current flowing through the switching device; a discrepancy detection unit configured to detect discrepancy between current flowing through the switching device during an on-state of the switching device and a reference value, based on the parameter; and a control unit that, if the discrepancy is not detected, switches a change speed of a gate voltage of the switching device at a timing when a reference time has elapsed since a turn-off start of the switching device during a next turn-off time period of the switching device, and if the discrepancy is detected, keeps the change speed of the gate voltage during the next turn-off time period of the switching device.

Abstract: A gate driver includes: a gate drive unit configured to drive a gate of a switching element in accordance with an input signal that commands to turn on or to turn off the switching element; a timing determination unit configured to measure an on-time width from when the input signal is switched to an on-command to when the input signal is switched to an off-command, and configured to determine, based on the measured on-time width, an intermediate timing that is before switch-off surge voltage of the switching element reaches a peak; and a driving condition changing unit configured to change a gate driving condition of the switching element at the intermediate timing determined by the timing determination unit.

Abstract: Provided is a technique to prevent decreases in the detection accuracy caused by leakage current of photoelectric conversion elements that is caused by permeation of moisture. An active matrix substrate 1 includes a plurality of pixels, each of which includes: a photoelectric conversion element 12 that includes a pair of electrodes 14a, 14b and a semiconductor layer 15 interposed between the electrodes 14a, 14b; an inorganic film 105a that covers a part of a surface of one electrode 14b of the pair of electrodes, and a side surface of the photoelectric conversion element 12; a protection film 105b that has corrosion resistance against moisture, and covers a part of the inorganic film 105a that overlaps with the side surface of the photoelectric conversion element 12; and an organic film 106 that covers the inorganic film 105a and the protection film 105b.

Abstract: A scanning antenna includes a TFT substrate, a slot substrate, and a liquid crystal layer. The TFT substrate includes a transfer terminal section including a patch connection section formed of the same low-resistance metal film as that of a patch electrode, a first protection metal layer formed on the patch connection section, and a first insulating layer including an opening partially exposing an upper face of the first protection metal layer. The slot substrate includes a terminal section including a slot connection section formed of the same low-resistance metal film as that of the slot electrode, a second protection metal layer formed on the slot connection section, and a second insulating layer including an opening partially exposing an upper face of the second protection metal layer.

Abstract: A scanning antenna provided with an array of a plurality of antenna units includes a transmission and/or reception region including the plurality of antenna units, and a non-transmission and/or reception region other than the transmission and/or reception region. The scanning antenna includes a TFT substrate including a first dielectric substrate, a slot substrate including a second dielectric substrate and a slot electrode supported by a first main surface of the second dielectric substrate, a liquid crystal layer provided between the TFT substrate and the slot substrate, and a reflective conductive plate disposed facing a second main surface of the second dielectric substrate opposite to the first main surface with a dielectric layer interposed between the reflective conductive plate and the second main surface.

Abstract: An imaging panel (1) generates an image based on scintillation light obtained from X-rays transmitted through an object. The imaging panel (1) has an active area and terminal areas on a substrate (100). A protection layer is provided in the active area and the terminal areas, on one of surfaces of the substrate. In the active area (P1), a plurality of elements including switching elements (13) are provided. In the terminal areas (P2, P3), terminal elements (131, 132) connected with any of the plurality of elements are provided. The protection layer includes a barrier layer (101a) in contact with the one surface of the substrate (100), and is provided in a lower layer with respect to the plurality of elements and the terminal elements (131, 132). The barrier layer (101a) contains a material having resistance against an etching material that can etch the substrate (100).

Abstract: In recent years, it has been desired to further shorten the dead time. Provided is a driving device that drives on/off a main switching element to which a free wheeling diode is anti-parallel connected, wherein the driving device includes a determination unit configured to output a determination signal indicating whether free wheeling current is flowing from a source terminal to a drain terminal of the main switching element; and a drive control unit configured to reduce a switching speed when the main switching element is driven from an on-state to an off-state on condition that the determination signal indicating that the free wheeling current is flowing is output.

Abstract: A driving apparatus including: gate driving circuit to drive gates of a first semiconductor element and a second semiconductor element connected in series between a positive side power supply line and a negative side power supply line; a first timing generating circuit to generate a first timing signal when voltage applied to the second semiconductor element becomes reference voltage during a turn-off period of the first semiconductor element; and a first driving condition change circuit, wherein the gate driving circuit relaxes change in a charge amount of the gate of the first semiconductor element, according to the first timing signal.

Abstract: A driving apparatus is provided, the driving apparatus including: a gate driving unit that drives a semiconductor element; a sampling unit that samples, in an on-period of the semiconductor element, an observation value that changes according to an on-current flowing through the semiconductor element; and a changing unit that changes a driving condition under which the gate driving unit drives a gate of the semiconductor element when the semiconductor element is turned off according to the observation value sampled in an on-period of the semiconductor element.

Abstract: The scanning antenna includes a TFT substrate, a slot substrate including a slot electrode, a liquid crystal layer provided between the TFT substrate and the slot substrate, and a reflective conductive plate. Each of the plurality of antenna units includes a TFT, a patch electrode electrically connected to the drain of the TFT, a slot formed in the slot electrode corresponding to the patch electrode, and a first region in which the patch electrode and the slot electrode overlap each other when viewed from the normal direction of the first dielectric substrate. A distrance in the normal direction of the first dielectric substrate between the patch electrode and the slot electrode of the plurality of second antenna units is smaller than a distance in the normal direction of the first dielectric substrate between the patch electrode and the slot electrode of the plurality of first antenna units.

Abstract: A driving device is provided, which drives on/off a main switching element to which a diode is anti-parallel connected, wherein the driving device includes a detection unit configured to detect a voltage between a drain terminal and a source terminal; a determination unit configured to output a determination signal indicating whether a free wheeling current is flowing from the source terminal to the drain terminal based on a detected voltage detected by the detection unit; and a drive control unit configured to perform control such that the main switching element is set in an on-state on condition that an on command signal for turning on the main switching element is input and on condition that the determination signal indicating that the free wheeling current is flowing is output.