Abstract: Disclosed is a novel method for producing high-purity silicon at low cost. Particularly disclosed is a novel method for producing high-purity silicon, which can be suitably used as a raw material for solar cells, at low cost.

Abstract: Process for producing a refined metal or metalloid, comprising: an electrolysis step of, in an electrolytic bath set in a container for an electrolysis in which a material comprising a metal element or metalloid element and impurities acts as an anode, and an alloy comprising the same metal element or metalloid element as the metal element or metalloid element and a medium metal that does not substantially form a solid solution with the metal element or metalloid element and having a complete solidification temperature lower than the melting point of the metal element or metalloid element acts as a cathode, performing electrolysis at a temperature at which the alloy can be a liquid phase; withdrawing a part or the whole of the alloy of the cathode to an outside of the container; cooling the withdrawn alloy at a temperature higher than the complete solidification temperature and lower than the electrolysis temperature; and a recovery step.

Abstract: A method for producing silicon, the method comprising a heating step of heating a metal powder Mp1 made of at least one member selected from the group consisting of Mg, Ca and Al in a plasma P; and a reducing step of reducing a halogenated silane G1 by the metal powder Mp2 heated in the plasma P to obtain silicon.

Abstract: Disclosed is a novel method for producing high-purity silicon at low cost. Particularly disclosed is a novel method for producing high-purity silicon, which can be suitably used as a raw material for solar cells, at low cost.

Abstract: There are provided: (1) a process for producing an InSbO4-containing transparent electroconductive film, which comprises the step of sputtering simultaneously: (i) a target (A) for sputtering, which comprises In, Sb and O, and whose atomic ratio of Sb/In is from 0.9 to 1.1, and (ii) a target (B) for sputtering, which comprises Sb, (2) a transparent eletroconductive film, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 0.8 to 1.5, and (3) a target for sputtering, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 1.2 to 2.0.

Abstract: A method for producing silicon is provided. The silicon production method comprises the step (i) of reducing a halosilane represented by the formula (1) with a metal SiHnX4-n??(1) wherein n is an integer of 0 to 3, X is at least one selected from F, Cl, Br and I, with the proviso that plural Xs may be the same or different from each other, wherein said metal has a melting point of not higher than 1300° C. and takes a liquid phase of spherical or thin film shape in the reduction of the halosilane, with the proviso that when the liquid phase is in the shape of sphere, the relationships (A), (B) and (C) are satisfied wherein r is radius (?m) of the sphere, t is reduction time (min) and x is reduction temperature (° C.), while when the liquid phase is in the shape of thin film, the relationships (A?), (B?) and (C) are satisfied wherein r? is thickness (?m) of the thin film, t is reduction time (min) and x is reduction temperature (° C.): ln (r/?t)?(10.5?7000/(x+273))??(A) ln (r?/?t)?(10.

Abstract: The present invention provides a method for producing high purity silicon. The method for producing high purity silicon comprises a step of reducing halogenated silicon represented by the following formula (1) with aluminum, wherein the aluminum used as a reductant has a purity of not less than 99.9% by weight, SiHnX4-n??(1) wherein n is an integer of 0 to 3, X is at least one halogen selected from the group consisting of F, Cl, Br and I; and the purity of the aluminum is the balance obtained by deducting the total % by weight of iron, copper, gallium, titanium, nickel, sodium, magnesium and zinc contained in the aluminum from 100% by weight.

Abstract: A method of producing an Indium Tin Oxide powder is described. A method of producing an Indium Tin Oxide powder comprising the steps of: (1) mixing a raw aqueous solution containing indium ions and tin ions and having a proportion of divalent tin ions in the tin ions of 50 wt % or more with an alkali aqueous solution, (2) separating the product into solid and liquid, and (3) calcinating the resulted solid.

Abstract: As an effective method for reusing ITO sintered bodies, there is provided a method for producing an aqueous solution containing indium ions which comprises a step of subjecting an acidic solution containing indium ions and tin ions to an electrolytic treatment to precipitate metallic tin and a step of removing or re-dissolving the precipitated metallic tin.

Abstract: A method for producing an indium-containing aqueous solution having a reduced amount of metal impurities is provided. A method for producing an indium-containing aqueous solution having a reduced amount of metal impurities which comprises bringing an aqueous solution containing indium and metal impurities whose hydrogen ion concentration is adjusted at 0.5 mol/L to 3 mol/L into contact with a non-chelate ion-exchange resin to remove the metal impurities, and a method for producing an indium-containing aqueous solution having a reduced amount of metal impurities which comprises bringing an aqueous solution containing indium and metal impurities into contact with a chelate ion-exchange resin to remove the metal impurities are provided.

Abstract: There are provided:

Abstract: A glass paste comprising an inorganic powder, wherein the powder has a refractive index of 2.0 or more, a reflective index at wavelengths of light of 400 nm, 550 nm and 700 nm in a light reflection spectrum of 80% or more, a primary particle size measured by scanning electron microscopy of from 0.1 &mgr;m to 10 &mgr;m, and a BET specific surface area of from 0.1 m2/g to 15 m2/g.

Abstract: A metal oxide powder except &agr;-alumina, comprising polyhedral particles having at least 6 planes each, a number average particle size of from 0.1 to 300 &mgr;m, and a D90/D10 ratio of 10 or less where D10 and D90 are particle sizes at 10% and 90% accumulation, respectively from the smallest particle size side in a cumulative particle size curve of the particles. This metal oxide powder contains less agglomerated particles, and has a narrow particle size distribution and a uniform particle shape.

Abstract: There are provided: (1) a process for producing an InSbO4-containing transparent electroconductive film, which comprises the step of sputtering simultaneously: (i) a target (A) for sputtering, which comprises In, Sb and O, and whose atomic ratio of Sb/In is from 0.9 to 1.1, and (ii) a target (B) for sputtering, which comprises Sb, (2) a transparent eletroconductive film, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 0.8 to 1.5, and (3) a target for sputtering, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 1.2 to 2.0.

Abstract: A method of producing an Indium Tin Oxide powder is described. A method of producing an Indium Tin Oxide powder comprising the steps of: (1) mixing a raw aqueous solution containing indium ions and tin ions and having a proportion of divalent tin ions in the tin ions of 50 wt % or more with an alkali aqueous solution, (2) separating the product into solid and liquid, and (3) calcinating the resulted solid.

Abstract: A glass paste comprising an inorganic powder, wherein the powder has a refractive index of 2.0 or more, a reflective index at wavelengths of light of 400 nm, 550 nm and 700 nm in a light reflection spectrum of 80% or more, a primary particle size measured by scanning electron microscopy of from 0.1 &mgr;m to 10 &mgr;m, and a BET specific surface area of from 0.1 m2/g to 15 m2/g.

Abstract: A method for producing an indium-tin-oxide sintered body comprising the steps of; molding a powder comprising indium, tin and oxygen, and sintering the molded article in oxygen gas-containing atmosphere, wherein the halogen content of the powder comprising indium, tin and oxygen is 0.02% by weight or less, the concentration of oxygen in the oxygen gas-containing atmosphere is 90% or more during the sintering, the partial pressure of moisture contained in the oxygen gas-containing atmosphere is 800 Pa or less during the sintering, and the molded article is maintained at a temperature in the range from 1500 to 1650° C. for 1 hour or more for the sintering.

Abstract: There are provided:

Abstract: A method for producing an indium-containing aqueous solution having a reduced amount of metal impurities is provided A method for producing an indium-containing aqueous solution having a reduced amount of metal impurities which comprises bringing an aqueous solution containing indium and metal impurities whose hydrogen ion concentration is adjusted at 0.5 mol/L to 3 mol/L into contact with a non-chelate ion-exchange resin to remove the metal impurities, and a method for producing an indium-containing aqueous solution having a reduced amount of metal impurities which comprises bringing an aqueous solution containing indium and metal impurities into contact with a chelate ion-exchange resin to remove the metal impurities are provided.

Abstract: A method for producing an indium-tin-oxide sintered body comprising the steps of;