Abstract: The present invention provides a method of treating waste water including nitrogen-containing organic compounds to convert these compounds into harmless gases without performing a post-treatment. The method comprises spraying waste water in a heated space to gasify the waste water into waste gas, and oxidizing the waste gas by contacting it with a catalyst to convert the nitrogen-containing organic compounds into harmless gases. An apparatus for treating waste water using the method is also disclosed.

Abstract: The present invention provides a method of treating waste water including nitrogen-containing organic compounds to convert harmless gases without post-treatment. The method comprises steps of spraying the waste water in a heated space to gasify the waste water to waste gas, and oxidizing the waste gas by contacting with a catalyst to convert the nitrogen-containing organic compound into harmless gases.

Abstract: A wafer inspecting apparatus inspects the electric characteristics of IC chips of a wafer W. The inspection is carried out by simultaneously examining the inspecting electrodes of all IC chips in a contact manner in the state where the wafer W is held on the main chuck. The wafer inspecting apparatus is provided with a contactor, and this contactor is made up of a first contactor, a second contactor and a driving mechanism. The first contactor has a large number of contact projections on the lower surface thereof and a large number of contact electrodes on the entire upper surface thereof. The contact projections are brought into simultaneous contact with the inspecting electrodes. The contact electrodes are electrically connected to the contact projections, respectively. The second contactor has a number of contact elements, such as pogo-pins, which are brought into contact with the contact electrodes of the first contactor.

Abstract: A probe device for testing a wafer divided into IC chips has a vessel that accommodates a wafer mounting stand and a flexible probe card having contactor bumps. The vessel is configured in a separatable manner of a grounded aluminum cover portion to which the probe card is integrally fixed and a base portion fixed to the wafer mounting stand. The interior of the vessel is sealed with the wafer and the probe card facing each other therein. A space above the probe card forms a damper chamber into which a fluid is introduced in such a manner that the pressure thereof presses the bumps on the probe card against the wafer. Bumps in a peripheral edge portion of the probe card are placed into contact with electrodes in a peripheral edge portion of the vessel, and thence to a test head. The above configuration can prevent the effects of external electrical noise and thus enable stable electrical measurements unaffected by changes in ambient temperature.

Abstract: A catalyst of the present invention is adapted for purifying fumigation exhaust gases, and comprises, as a catalyst component A, a metal oxide containing at least one, or a composite oxide containing two or more metals selected from the group consisting of Ti, Si and Zr; and, as a catalyst component B, an oxide containing at least one selected from the group consisting of V, Cu, W and Cr; and has an average micropore diameter in the range of 0.010 to 0.070 .mu.m, a total micropore volume in the range of 0.30 to 0.60 ml/g, and a specific surface area in the range of 50 to 200 m.sup.2 /g. The use of this catalyst makes it possible to economically and efficiently purify fumigation exhaust gas.

Abstract: An aligning apparatus includes a first image pickup camera for picking up an image of an inspection contactor, a moving body located so as to be movable in X-, Y-, Z- and .theta.-directions and having the first image pickup camera fixed thereon, a wafer bearer capable of being located on the moving body and supporting a semiconductor wafer, a control circuit for controlling movements of the moving body moved in the individual directions, and a second image pickup camera for picking up an image of the semiconductor wafer on the bearer moving under the control of the control circuit.

Abstract: A probing device for inspecting semiconductor devices such as IC chips comprises a mounting section for supporting a silicon substrate wafer (i.e., an object to be inspected), a moving section for moving a probe card in such a way that contacts formed on a surface of the probe card can be pushed against electrode pads formed on the wafer, and a measuring section. The probe card is formed by joining a silicon nitride (Si.sub.3 N.sub.4) thin film (whose thermal expansion coefficient is roughly equal to that of the silicon wafer) to a lower surface of a wiring substrate. The wiring substrate is composed of a polyamide thin film (as an insulating layer) and conductive layers (as conductive signal line paths) formed in and on both the surfaces of the polyamide this film. Further, bumps (contacts) are arranged on the lower surface of the silicon nitride thin film.

Abstract: First and second bumps electrically connected at first and second positions along a conductive run borne by a flexible substrate are respectively oriented for contact with a pad of a die under test and a pad of a tester. A probe frame is bonded to the substrate between connector frames bonded at opposite ends of the substrate. Alternatively, a pair of bumps exposed on the same surface of a flexible substrate are electrically connected at different positions along a conductive run. One of the bumps is oriented for contact with a pad of a die under test, and the other is in contact with a pad on a surface of a printed circuit board directed away from the die. The pad of the printed circuit board is provided for electrical connection to a tester.

Abstract: A cleaning apparatus for cleaning a probe card having a contact element to be brought into electrical contact with a pad of a circuit to be inspected, comprises a conductive brush to be brought into contact at least with the contact element to clean the probe card, and a gas blow mechanism for intermittently blowing gas to the brush. The conductive brush is vibrated by the gas blow, and a particle adhered from the probe card is removed by the vibrating brush and the gas jet.

Abstract: A probe card for examining the electrical characteristics of a plurality of IC chips formed on a semiconductor wafer has a card body and a printed wiring board. The card body has contact elements for contacting the electrodes pads of each IC chip. The printed wiring board has a plurality of transmission paths for transmitting a high-frequency signal to the contact elements. The printed wiring board has a plurality of signal lines disposed between first and second insulating layers, and first and second reference conductive plates opposing the signal lines through the first and second insulating layers, respectively. DC potentials that are different from each other are applied to the first and second reference conductive plates. The first and second reference conductive plates are arranged to be substantially offset from each other along each transmission path. The first and second reference conductive plates are arranged to slightly overlap each other.

Abstract: A probing test apparatus comprising a probe card having a plurality of probes and first terminals contacted with and electrically connected to conductive pads of a circuit, a test head having a signal transmitting circuit through which the test signal is transmitted to the probes, a performance board having second terminals electrically connected to the signal transmitting circuit, a contact ring interposed between the performance board and the probe card and whose impedance has been adjusted, a plurality of first-type pogopins each having a pair of pin members contacting the first and second terminals to transmit the test signal to the probes, and a plurality of second-type pogopins each having a pair of pin members contacting the first and second terminals, the second-type pogopins being arranged in the contact ring, surrounding each first-type pogopin in a plane perpendicular to the axes of the pin members, and electrically connected to the first terminal grounded.

Abstract: A plated layer made of a metal which is hard to oxidize is formed on the surface of a check electrode of a semiconductor chip which is formed on a semiconductor wafer. A bump of a contactor is caused to come in contact with the check electrode on which the plated layer is formed in the direction perpendicular to the semiconductor chip. Then, a voltage is applied to the bump of the contactor to make a check such as burn-in on the semiconductor chip in a lump.

Abstract: The present invention provides a catalyst used in wastewater treatment process wherein not only an organic compound not containing nitrogen, sulfur or halogen is decomposed, but also a nitrogen-containing compound, a sulfur-containing compound and an organic halogeno compound are effectively decomposed, thereby wastewater are treated with excellent efficiency for a long period of time. The invention also provides a production process for the catalyst and said wastewater treatment process. The first catalyst comprises: an oxide of iron as an A component; and at least one kind of element as a B component selected from a group consisting of cobalt, nickel, cerium, silver, gold, platinum, palladium, rhodium, ruthenium and iridium.

Abstract: The probe apparatus for a semiconductor wafer has a work table on which a wafer is placed. A printed wiring board having a high rigidity is situated above the work table. A flexible membrane probe card is detachably mounted on the printed wiring board. The probe card has a main region in which contact elements to be brought into contact with electrode pads of the semiconductor wafer are arranged. A rigid rectangular frame is attached to the rear surface of the probe card so as to flatten the probe card. An expandable chamber for bringing the contact elements of the main region into elastic contact with the electrode pads of the semiconductor wafer, is provided behind the main region of the probe card. A guide is arranged to surround the expandable chamber in tight contact therewith. A pushing plate having a hard base and elastic layers is arranged between the expandable chamber and the probe card. The main region is pushed out by the pushing plate in a state parallel to the wafer.

Abstract: A probing device for inspecting semiconductor devices such as IC chips includes a mounting section for supporting a silicon substrate wafer (i.e., an object to be inspected), a moving section for moving a probe card in such a way that contacts formed on a surface of the probe card can be pushed against electrode pads formed on the wafer, and a measuring section. The probe card is formed by joining a silicon nitride (Si.sub.3 N.sub.4) thin film (whose thermal expansion coefficient is roughly equal to that of the silicon wafer) to a lower surface of a wiring substrate. The wiring substrate is composed of a polyamide thin film (as an insulating layer) and conductive layers (as conductive signal line paths) formed in and on both the surfaces of the polyamide thin film. Further, bumps (contacts) are arranged on the lower surface of the silicon nitride thin film.

Abstract: A probe device for testing a wafer divided into IC chips has a vessel that accommodates a wafer mounting stand and a flexible probe card having contactor bumps. The vessel is configured in a separatable manner of a grounded aluminum cover portion to which the probe card is integrally fixed and a base portion fixed to the wafer mounting stand. The interior of the vessel is sealed with the wafer and the probe card facing each other therein. A space above the probe card forms a damper chamber into which a fluid is introduced in such a manner that the pressure thereof presses the bumps on the probe card against the wafer. Bumps in a peripheral edge portion of the probe card are placed into contact with electrodes in a peripheral edge portion of the vessel, and thence to a test head. The above configuration can prevent the effects of external electrical noise and thus enable stable electrical measurements unaffected by changes in ambient temperature.

Abstract: A gas containing malodorous components is deodorized by passing the gas over a MnO.sub.2 based catalyst while the catalyst is heated by directly applying an electric current thereto, thereby catalytically oxidizing the malodorous components in the gas and effecting their removal.

Abstract: The present invention provides a catalyst used in wastewater treatment process wherein not only an organic compound not containing nitrogen, sulfur or halogen is decomposed, but also a nitrogen-containing compound, a sulfur-containing compound and an organic halogeno compound are effectively decomposed, thereby wastewater are treated with excellent efficiency for a long period of time. The invention also provides a production process for the catalyst and said wastewater treatment process. The first catalyst comprises: an oxide of iron as an A component; and at least one kind of element as a B component selected from a group consisting of cobalt, nickel, cerium, silver, gold, platinum, palladium, rhodium, ruthenium and iridium.

Abstract: The present invention provides a catalyst used in wastewater treatment process wherein not only an organic compound not containing nitrogen, sulfur or halogen is decomposed, but also a nitrogen-containing compound, a sulfur-containing compound and an organic halogeno compound are effectively decomposed, thereby wastewater are treated with excellent efficiency for a long period of time. The invention also provides a production process for the catalyst and said wastewater treatment process. The first catalyst comprises: an oxide of iron as an A component; and at least one kind of element as a B component selected from a group consisting of cobalt, nickel, cerium, silver, gold, platinum, palladium, rhodium, ruthenium and iridium.

Abstract: A catalyst composition including component A and component B, the component A being a carrier, preferably having a honeycomb structure, and being a single-component oxide or a multi-component composite oxide of at least one metal of titanium, silicon and zirconium, and the component B being a catalyst component deposited on the carrier of component A and being at least one member selected from the group of noble metals and other specifically limited metals and their oxides, is very effective for decomposing and removing poisonous organic chlorine compounds, such as dioxin and the like, or poisonous organic chlorine compound-forming substances contained in an exhaust gas exhausted from an incinerator of an incineration plant provided with the incinerator and a dust collector. In addition, and the generation of the poisonous organic chlorine compound from the incineration plant can be prevented.