Abstract: A short-circuit detector includes: a first Rogowski coil configured to generate a first detection signal in accordance with a current that flows through a first arm due to a short circuit in a load; a second Rogowski coil configured to generate a second detection signal in accordance with a current that flows through the first arm due to a short circuit in the first arm or a second arm; a load short-circuit detection circuit configured to detect the short circuit in the load, based on the first detection signal; an arm short-circuit detection circuit configured to detect the short circuit in the first arm or the second arm, based on the second detection signal; and a short-circuit detection circuit configured to detect a short-circuit, based on: an output signal output from the load short-circuit detection circuit; and an output signal output from the arm short-circuit detection circuit.

Abstract: Such a semiconductor light-emitting device (10, 30, 40) that emitted light has small directivity of light intensity and a color tone and a light output is hardly reduced is obtained. This semiconductor light-emitting device includes a semiconductor light-emitting element (1, 31) and a thin-film light diffusion portion (8, 8a, 38, 41) arranged on a light-emitting direction side of the semiconductor light-emitting element.

Abstract: A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.

Abstract: A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.

Abstract: To provide an oil drilling fluid which is formed of an ?-olefin oligomer produced from an ?-olefin serving as a raw material in the presence of a metallocene catalyst, a base oil of the drilling fluid which has characteristics such as low toxicity and low aromatic content as well as high environmental suitability and which is suitable for oil drilling at low temperature.

Abstract: A compound having a particular structural formula containing plural alkyl groups connected to each other, such as 9-methylenenonadecane, 2-decyl-2-octyloxirane and the like, is mixed in a resin composition for sealing. Accordingly, a resin composition without surface stickiness is obtained that has low viscosity and excellent thixotropic property before curing, and has excellent adhesion property and low tackiness residual property after curing, which can be favorably used as a resin composition for sealing for construction and automobile.

Abstract: A semiconductor laser diode element includes a semiconductor laser diode portion including a ridge portion extending in a first direction in which a cavity extends, a groove formed along the ridge portion and a support portion formed along the groove on a side farther from the ridge portion and holding the groove between the support portion and the ridge portion and a support substrate bonded to the semiconductor laser diode portion through a fusion layer, wherein the fusion layer is formed so as to be embedded in the groove, a space from the ridge portion to the support substrate and a space from the support portion to the support substrate.

Abstract: In a blue-violet semiconductor laser device, a pair of side surfaces of a semiconductor device structure composed of a nitride based semiconductor layer is respectively positioned inside a pair of side surfaces of a partial substrate composed of a Ge substrate. This causes the pair of side surfaces of the semiconductor device structure and the pair of side surfaces of the partial substrate to be respectively spaced apart from each other by a predetermined distance in a direction perpendicular to the pair of side surfaces of the semiconductor device structure. On the partial substrate, current blocking layers are formed in a region between the pair of side surfaces of the partial substrate and the pair of side surfaces of the semiconductor device structure.

Abstract: A semiconductor light-emitting device having high reliability is obtained while suppressing separation between a support substrate and a semiconductor element layer. This semiconductor light-emitting device includes a support substrate (1), a first bonding layer (2a) formed on the support substrate (1), a second bonding layer (2b) formed on the first bonding layer (2a), a third bonding layer (2c) formed on the second bonding layer (2b), and a semiconductor element layer (3) formed on the third bonding layer (2c). The melting point of the second bonding layer (2b) is lower than the melting points of the first bonding layer (2a) and the third bonding layer (2c).

Abstract: A semiconductor laser device having a cladding layer in the vicinity of an active layer capable of being inhibited from cracking is obtained. This semiconductor laser device (100) includes a first semiconductor device portion (120) and a support substrate (10) bonded to the first semiconductor device portion, and the first semiconductor device portion has a cavity, a first conductivity type first cladding layer (22) having a first region (22a) having a first width in a second direction (direction A) intersecting with a first direction (direction B) in which the cavity extends and a second region (22b) having a second width smaller than the first width in the second direction, formed on the first region, and a first active layer (23) and a second conductivity type second cladding layer (24) formed on the second region of the first cladding layer.

Abstract: A method of manufacturing a semiconductor laser device includes steps of forming a third oblong substrate by bonding a first oblong substrate and a second oblong substrate, and dividing the third oblong substrate so that first side surfaces of the first semiconductor laser devices protrude sideward from positions formed with third side surfaces of the second semiconductor laser devices while the fourth side surfaces of the second semiconductor laser devices protrude sideward from positions formed with the second side surfaces of the first semiconductor laser devices, and the first electrodes are located on protruding regions of the first semiconductor laser devices.

Abstract: A semiconductor laser device capable of improving planarity of cleavage planes of an optical waveguide thereof is obtained. This semiconductor laser device includes a support substrate, a semiconductor laser element portion having a pair of cavity facets provided with ends of an optical waveguide extending in a first direction and a bonding layer bonding the support substrate and the semiconductor laser element portion to each other, while the bonding layer has void portions formed on regions close to at least the ends of the optical waveguide in the vicinity of the cavity facets.

Abstract: A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.

Abstract: A method of manufacturing a nitride semiconductor device includes the steps of; forming a stripping layer including In on a substrate; forming a nitride semiconductor layer on the stripping layer; causing a decomposition of the stripping layer by increasing a temperature of the stripping layer; irradiating the stripping layer with laser light; and separating the nitride semiconductor layer from the substrate.

Abstract: A nitride-based semiconductor device includes an n-type nitride-based semiconductor layer, and an n-side electrode having a first metal layer made of Al, formed on a surface of the n-type nitride-based semiconductor layer and a second metal layer made of Hf formed so as to cover a surface of the first metal layer on a side opposite to the n-type nitride-based semiconductor layer.

Abstract: Such a semiconductor light-emitting device (10, 30, 40) that emitted light has small directivity of light intensity and a color tone and a light output is hardly reduced is obtained. This semiconductor light-emitting device includes a semiconductor light-emitting element (1, 31) and a thin-film light diffusion portion (8, 8a, 38, 41) arranged on a light-emitting direction side of the semiconductor light-emitting element.

Abstract: A compound having a particular structural formula containing plural alkyl groups connected to each other, such as 9-methylenenonadecane, 2-decyl-2-octyloxirane and the like, is mixed in a resin composition for sealing. Accordingly, a resin composition without surface stickiness is obtained that has low viscosity and excellent thixotropic property before curing, and has excellent adhesion property and low tackiness residual property after curing, which can be favorably used as a resin composition for sealing for construction and automobile.

Abstract: A semiconductor light-emitting device having high reliability is obtained while suppressing separation between a support substrate and a semiconductor element layer. This semiconductor light-emitting device includes a support substrate (1), a first bonding layer (2a) formed on the support substrate (1), a second bonding layer (2b) formed on the first bonding layer (2a), a third bonding layer (2c) formed on the second bonding layer (2b), and a semiconductor element layer (3) formed on the third bonding layer (2c). The melting point of the second bonding layer (2b) is lower than the melting points of the first bonding layer (2a) and the third bonding layer (2c).

Abstract: The easy-to-tear stretched aliphatic polyester film of the present invention is characterized in that the edge tear strength in the longitudinal direction and the transverse direction is not more than 22 N. The easy-to-tear stretched aliphatic polyester film of the present invention is produced by a method of irradiation of actinic rays on an aliphatic polyester film or a method of film-forming a film obtained by laminating aliphatic polyesters having different melting points in three layers of A/B/A under particular film-forming conditions.

Abstract: A principal surface at one side of a support substrate has thereon an adjustment layer made of material having a higher thermal expansion coefficient than that of the support substrate. Then, a nitride-base semiconductor element layer and the support substrate on a growth substrate are joined via an adhesion layer. Next, the support substrate is joined to the nitride-base semiconductor element layer via the adhesion layer. Next, the growth substrate is separated from the joined nitride-base semiconductor element layer and the support substrate.