Abstract: A semiconductor device, including a conductive plate having a front surface that includes a plurality of bonding regions and a plurality of non-bonding regions in peripheries of the bonding regions, a plurality of semiconductor elements mounted on the conductive plate in the bonding regions, and a resin encapsulating therein at least the plurality of semiconductor elements and the front surface of the conductive plate. The conductive plate has, at the front surface thereof in the non-bonding regions, a plurality of holes.

Abstract: A semiconductor device, including a conductive plate having a front surface that includes a plurality of bonding regions and a plurality of non-bonding regions in peripheries of the bonding regions, a plurality of semiconductor elements mounted on the conductive plate in the bonding regions, and a resin encapsulating therein at least the plurality of semiconductor elements and the front surface of the conductive plate. The conductive plate has, at the front surface thereof in the non-bonding regions, a plurality of holes.

Abstract: An aluminum alloy conductor, containing: 0.01 to 0.4 mass % of Fe, 0.1 to 0.3 mass % of Mg, 0.04 to 0.3 mass % of Si, 0.1 to 0.5 mass % of Cu, and 0.001 to 0.01 mass % of Ti and V in total, with the balance being Al and inevitable impurities, wherein the conductor contains three kinds of intermetallic compounds A, B, and C, in which the intermetallic compounds A, B, and C have a particle size of 0.1 ?m or more but 2 ?m or less, 0.03 ?m or more but less than 0.1 ?m, and 0.001 ?m or more but less than 0.03 ?m, respectively, and area ratios a, b, and c of the intermetallic compounds A, B, and C, in an arbitrary region in the conductor, satisfy: 0.1%?a?2.5%, 0.1%?b?3%, and 1%?c?10%.

Abstract: An aluminum alloy wire material, which has an alloy composition containing: 0.1 to 0.4 mass % of Fe, 0.1 to 0.3 mass % of Cu, 0.02 to 0.2 mass % of Mg, and 0.02 to 0.2 mass % of Si, and further containing 0.001 to 0.01 mass % of Ti and V in total, with the balance being Al and unavoidable impurities, in which a grain size is 5 to 25 ?m in a vertical cross-section in a wire-drawing direction of the wire material, in which, according to JIS Z 2241, a tensile strength (TS) is 80 MPa or more, an elongation (El) is 15% or more, and a 0.2% yield strength (YS; MPa) satisfies, together with the TS, a relationship represented by formula: 1.5?(TS/YS)?3, and in which an electrical conductivity is 55% IACS or more.

Abstract: A method of producing a copper alloy containing a precipitate X composed of Ni and Si and a precipitate Y that includes (a) Ni and 0% Si, (b) Si and 0% Ni, or (c) neither Ni nor Si, wherein the precipitate X has a grain size of 0.001 to 0.1 ?m, and the precipitate Y has a grain size of 0.01 to 1 ?m.

Abstract: A copper alloy for electric and electronic equipments, containing from 0.5 to 4.0 mass % of Ni, from 0.5 to 2.0 mass % of Co, and from 0.3 to 1.5 mass % of Si, with the balance of copper and inevitable impurities, wherein R{200} is 0.3 or more, in which the R{200} is a proportion of a diffraction intensity from a {200} plane of the following diffraction intensities and is represented by R{200}=I{200}/(I{111}+I{200}+I{220}+I{311}), I{111} is a diffraction intensity from a {111} plane, I{200} is a diffraction intensity from a {200} plane, I{220} is a diffraction intensity from a {220} plane, and I{311} is a diffraction intensity from a {311} plane, each at the material surface.

Abstract: An aluminum alloy wire material, which has an alloy composition containing: 0.1 to 0.4 mass % of Fe, 0.1 to 0.3 mass % of Cu, 0.02 to 0.2 mass % of Mg, and 0.02 to 0.2 mass % of Si, and further containing 0.001 to 0.01 mass % of Ti and V in total, with the balance being Al and unavoidable impurities, in which a grain size is 5 to 25 ?m in a vertical cross-section in a wire-drawing direction of the wire material, in which, according to JIS Z 2241, a tensile strength (TS) is 80 MPa or more, an elongation (El) is 15% or more, and a 0.2% yield strength (YS; MPa) satisfies, together with the TS, a relationship represented by formula: 1.5?(TS/YS)?3, and in which an electrical conductivity is 55% IACS or more.

Abstract: An aluminum alloy wire material, which has an alloy composition containing: 0.1 to 0.4 mass % of Fe, 0.1 to 0.3 mass % of Cu, 0.02 to 0.2 mass % of Mg, and 0.02 to 0.2 mass % of Si, and further containing 0.001 to 0.01 mass % of Ti and V in total, with the balance being Al and unavoidable impurities, in which a grain size is 5 to 25 ?m in a vertical cross-section in a wire-drawing direction thereof, and an average creep rate between 1 and 100 hours is 1×10?3 (%/hour) or less by a creep test under a 20% load of a 0.2% yield strength at 150° C.

Abstract: A copper alloy material for electric/electronic parts, containing Co and Si as additive elements, wherein, a compound A is dispersed, which is composed of Co and Si and has an average particle diameter of 5 nm or more but less than 50 nm, and at least one compound is dispersed, which is selected from: a compound B which does not contain one or any of Co and Si and has an average particle diameter from 50 to 500 nm, a compound C which contains both of Co and Si and another element and has an average particle diameter from 50 to 500 nm, and a compound D which is composed of Co and Si and has an average particle diameter from 50 to 500 nm; a grain size of the copper alloy matrix is 3 to 35 ?m; and an electrical conductivity is 50% IACS or more.

Abstract: A copper alloy material for electric/electronic parts, containing Co in an amount of 0.7 to 2.5 mass % and Si in an amount that gives a mass ratio of Co and Si (Co/Si ratio) within the range from 3.5 to 4.0, with the balance being Cu and unavoidable impurities, wherein the grain size is 3 to 15 ?m.

Abstract: A method of producing a copper alloy containing: Ni and/or Si and at least one or more of B, Al, As, Hf, Zr, Cr, Ti, C, Fe, P, In, Sb, Mn, Ta, V, S, O, N, Misch metal (MM), Co, and Be, the copper alloy having a precipitate X composed of Ni and Si, and a precipitate Y composed of Ni and/or Si, and at least one or more of B, Al, As, Hf, Zr, Cr, Ti, C, Fe, P, In, Sb, Mn, Ta, V, S, O, N, Misch metal (MM), Co, and Be, in which a grain diameter of the precipitate Y is 0.01 to 2 ?m.

Abstract: A copper alloy material for an electric/electronic part, having a composition comprising Co 0.5 to 2.0 mass % and Si 0.1 to 0.5 mass %, with the balance of Cu and inevitable impurities, in which a copper alloy of a matrix has a grain size of 3 to 35 ?m, a precipitate composed of Co and Si has a particle size of 5 to 50 nm, the precipitate has a density of 1×108 to 1×1010 number/mm2, and the copper alloy material has a tensile strength of 550 MPa and an electrical conductivity of 50% IACS or more.

Abstract: A copper alloy for electronic machinery and tools, having a surface layer of a work affected layer whose thickness is 0.2 ?m or below; and a method of producing the same.

Abstract: A copper alloy strip material for electrical/electronic equipment includes a copper alloy containing 2.0 to 5.0 mass % Ni, 0.43 to 1.5 mass % Si, and a remaining component formed of Cu and an unavoidable impurity. Three types of intermetallic compounds A, B, and C comprising Ni and Si in a total amount of 50 mass % or more are contained. The intermetallic compound A has a compound diameter of 0.3 ?m to 2 ?m, the intermetallic compound B has a compound diameter of 0.05 ?m to less than 0.3 ?m, and the intermetallic compound C has a compound diameter of more than 0.001 ?m to less than 0.05 ?m.

Abstract: A method of producing a copper alloy containing a precipitate X composed of Ni and Si and a precipitate Y that comprises (a) Ni and 0% Si, (b) Si and 0% Ni, or (c) neither Ni nor Si, wherein the precipitate X has a grain size of 0.001 to 0.1 ?m, and the precipitate Y has a grain size of 0.01 to 1 ?m.

Abstract: An electrical contact comprising a silver-coated stainless steel strip, which has an underlying layer comprising any one of nickel, cobalt, nickel alloys, and cobalt alloys, on at least a part of the surface of a stainless steel substrate, and has a silver or silver alloy layer formed as an upper layer, in which a copper or copper alloy layer with a thickness of 0.05 to 2.0 ?m is provided between the silver or silver alloy layer and the underlying layer; and a producing method of the above-described electrical contact, in which the silver-coated stainless steel strip is subjected to a heat-treating in a non-oxidative atmosphere.

Abstract: A copper alloy sheet material which has a tensile strength of 730-820 MPa and contains at least nickel (Ni) and silicon (Si), with the remainder being copper (Cu) and inevitable impurities. When the sheet material has a shape capable of 180° tight bending and the width and thickness of this sheet material are expressed by W (unit: mm) and T (unit: mm) respectively, then the product of W and T is 0.16 or less. Preferably, the sheet material is constituted of an alloy containing nickel at 1.8-3.3 mass %, silicon at 0.4 mass %, and chromium (Cr) at 0.01-0.5 mass %, with the remainder being copper and inevitable impurities. The sheet material may further contain one or more of: at least one member selected among tin (Sn), magnesium (Mg), silver (Ag), manganese (Mn), titanium (Ti), iron (Fe), and phosphorus (P) in a total amount of 0.01-1 mass %; zinc (Zn) at 0.01-10 mass %, cobalt (Co) at and 0.01-1.5 mass %.

Abstract: A copper alloy material for an electric/electronic part, containing Co 0.5 to 2.5 mass % and Si 0.1 to 1.0 mass %, at a ratio of Co/Si of 3 to 5 in terms of mass ratio, with the balance of Cu and inevitable impurities, which is obtained by subjecting to a solution treatment at a temperature (° C.) from 800° C. to 960° C. and lower than ?122.77X2+409.99X+615.74, in which X represents the Co content in mass %.

Abstract: An copper alloy material for electric/electronic components containing Co by 0.2 to 2 mass % and Si by 0.05 to 0.5 mass % and having a remaining component composed of Cu and unavoidable impurities, characterized in that its grain size is 3 to 35 ?m and size of precipitate containing the both of Co and Si is 5 to 50 nm, electric conductivity is 50% IACS or more, tensile strength is 500 MPa or more and bending workability (R/t) is 2 or less.

Abstract: A copper alloy material for electric/electronic components according to the present invention is characterized in that a average grain size of 1 to 50 ?m that is designated by ((a+b)/2) in which a thickness of a grain is defined to be (a) and a width thereof is defined to be (b) which is on a cross section that is vertical to a rolling direction, an aspect ratio (a/b) thereof is between 0.5 and 1.0, an aspect ratio (a/b) of a grain before performing a bend working and an aspect ratio (a?/b?) of which a grain is effected by a tensile stress after performing a bend working of 90 degrees satisfy the following (Formula 1) of: 2?(a+b)/(a?/b?)?15??(Formula 1), and the copper alloy material has a bending workability to be excellent.