Abstract: A batch-type etching method includes applying microwaves from the outside of a reaction chamber to semiconductor wafers after HF gas etching of the wafers to remove residual substances including H2O, CH3OH, CH3COOH and/or other by-products from surfaces of the wafers. Microwaves oscillate polar molecules of the substances and generate heat, thereby removing the substances.

Abstract: A batch-type etching device and a method, which enable a stable process with high reproducibility by preventing contamination of CVD equipment by effectively removing H2O, CH3OH or CH3COOH and by-products adsorbing and remaining on the surface of a semiconductor wafer after etching is completed, are provided. The device comprises a reaction chamber, an exhaust port for evacuating the air inside the reaction chamber, a wafer-supporting boat for supporting at least one batch of semiconductor wafers inside the reaction chamber, a gas inlet port for introducing a reaction gas into the reaction chamber, and a microwave generator. The microwave generator is adapted to introduce microwaves into reaction chamber so that substances which adsorb and remain on the semiconductor wafers are desorbed and removed after etching is completed.

Abstract: A batch-type etching method includes applying microwaves from the outside of a reaction chamber to semiconductor wafers after HF gas etching of the wafers to remove residual substances including H2O, CH3OH, CH3COOH and/or other by-products from surfaces of the wafers. Microwaves oscillate polar molecules of the substances and generate heat, thereby removing the substances.

Abstract: A batch-type etching device and a method, which enable a stable process with high reproducibility by preventing contamination of CVD equipment by effectively removing H2O, CH3OH or CH3COOH and by-products adsorbing and remaining on the surface of a semiconductor wafer after etching is completed, are provided. The device comprises a reaction chamber, an exhaust port for evacuating the air inside the reaction chamber, a wafer-supporting boat for supporting at least one batch of semiconductor wafers inside the reaction chamber, a gas inlet port for introducing a reaction gas into the reaction chamber, and a microwave generator. The microwave generator is adapted to introduce microwaves into reaction chamber so that substances which adsorb and remain on the semiconductor wafers are desorbed and removed after etching is completed.

Abstract: HSG with an uneven surface is formed by (i) removing a spontaneous oxidation layer formed on an amorphous silicon surface of a semiconductor substrate by preprocessing, (ii) dissociating hydrogen in dangling bonds by heating it to a processing temperature, (iii) forming an amorphous silicon/polysilicon mixed-phase thin film selectively on solely an activated surface of the amorphous silicon surface in a silicon compound atmosphere, and (iv) annealing the film continuously. This method is characterized in including (a) a process which supplies a phosphorus compound and a dilution gas into a reactor while the semiconductor substrate is heated to a processing temperature, and (b) a process of annealing the semiconductor substrate in an atmosphere which contains the phosphorus compound and the dilution gas.