Patents by Inventor Kuniyasu Sakashita
Kuniyasu Sakashita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11885024Abstract: A gas introduction structure extends in a longitudinal direction of a processing container having a substantially cylindrical shape to supply gas into the processing container. The gas introduction structure includes an introduction section that partitions an introduction chamber, an ejection section that partitions a plurality of ejection chambers each including a plurality of gas holes through which the gas is ejected into the processing container, and a branch section that partitions a branch chamber connected to the introduction chamber. The branch chamber is branched to correspond to the number of ejection chambers in a tournament manner and connected to the ejection chambers.Type: GrantFiled: September 13, 2021Date of Patent: January 30, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Hiroki Iriuda, Reita Igarashi, Kuniyasu Sakashita
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Patent number: 11859285Abstract: A processing apparatus includes: a processing container having a substantially cylindrical shape; a gas nozzle extending in a longitudinal direction of the processing container along an inside of a side wall of the processing container; an exhaust body formed on the side wall on an opposite side of the processing container to face the processing gas nozzle; and an adjustment gas nozzle configured to eject a concentration adjustment gas toward a center of the processing container. The adjustment gas nozzle is provided within an angle range in which the exhaust body is formed at a central angle with reference to the center of the processing container in a plan view from the longitudinal direction.Type: GrantFiled: September 13, 2021Date of Patent: January 2, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Hiroki Iriuda, Kuniyasu Sakashita
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Publication number: 20230340666Abstract: A substrate processing apparatus includes: an inner cylinder having a first region formed inside the inner cylinder to accommodate a substrate; an outer cylinder provided outside the inner cylinder with a second region interposed between the inner cylinder and the outer cylinder and including an exhaust port formed in an end portion of a sidewall of the outer cylinder; a nozzle configured to discharge a gas to the first region; and a gas flow regulator including a plurality of slits provided from an upstream side toward a downstream side in a flow direction of the gas in a flow path of the gas from the first region to the exhaust port.Type: ApplicationFiled: April 18, 2023Publication date: October 26, 2023Inventors: Kuniyasu SAKASHITA, Tosihiko JO
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Publication number: 20220081775Abstract: A gas introduction structure extends in a longitudinal direction of a processing container having a substantially cylindrical shape to supply gas into the processing container. The gas introduction structure includes an introduction section that partitions an introduction chamber, an ejection section that partitions a plurality of ejection chambers each including a plurality of gas holes through which the gas is ejected into the processing container, and a branch section that partitions a branch chamber connected to the introduction chamber. The branch chamber is branched to correspond to the number of ejection chambers in a tournament manner and connected to the ejection chambers.Type: ApplicationFiled: September 13, 2021Publication date: March 17, 2022Inventors: Hiroki IRIUDA, Reita IGARASHI, Kuniyasu SAKASHITA
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Publication number: 20220081773Abstract: A processing apparatus includes: a processing container having a substantially cylindrical shape; a gas nozzle extending in a longitudinal direction of the processing container along an inside of a side wall of the processing container; an exhaust body formed on the side wall on an opposite side of the processing container to face the processing gas nozzle; and an adjustment gas nozzle configured to eject a concentration adjustment gas toward a center of the processing container. The adjustment gas nozzle is provided within an angle range in which the exhaust body is formed at a central angle with reference to the center of the processing container in a plan view from the longitudinal direction.Type: ApplicationFiled: September 13, 2021Publication date: March 17, 2022Inventors: Hiroki IRIUDA, Kuniyasu SAKASHITA
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Publication number: 20210395893Abstract: A gas nozzle extending vertically inward of an inner wall of a processing container having a substantially cylindrical shape, includes a plurality of first gas holes provided at intervals in a longitudinal direction; and a second gas hole provided at a tip of the gas nozzle and oriented toward a side opposite to a side in which the plurality of first gas holes are provided in a plan view from the longitudinal direction, wherein the second gas hole has an opening area larger than an opening area of each of the first gas holes.Type: ApplicationFiled: June 15, 2021Publication date: December 23, 2021Inventors: Kuniyasu SAKASHITA, Satoru OGAWA
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Patent number: 11047044Abstract: A film forming apparatus includes: a substrate holding member for vertically holding target substrates at predetermined intervals in multiple stages; a process vessel for accommodating the substrate holding member; a processing gas introduction member each having gas discharge holes which discharge a processing gas for film formation in a direction parallel to each target substrate and introduce the processing gas into the process vessel; an exhaust mechanism for exhausting the interior of the process vessel; and a plurality of gas flow adjustment members installed to face the target substrates, respectively. Each of the gas flow adjustment members adjusts a gas flow of the processing gas discharged horizontally above each of the target substrates from the gas discharge holes of the processing gas introduction member, to be directed from above the respective target substrate located below the respective gas flow adjustment member toward the surface of the respective target substrate.Type: GrantFiled: December 13, 2017Date of Patent: June 29, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Yoshihiro Takezawa, Kuniyasu Sakashita, Shigeru Nakajima
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Patent number: 10753497Abstract: A first on-off valve (2) and a second on-off valve (3) each are a two-port valve. A first passage block (5) is provided with a first on-off valve-corresponding inflow passage (11) and a first on-off valve-corresponding outflow passage (12). A second passage block (6) is provided with a second on-off valve-corresponding inflow passage (14) and a second on-off valve-corresponding outflow passage (15). The second on-off valve-corresponding outflow passage (15) is in communication with an upstream side portion of the first on-off valve-corresponding outflow passage (12) via a communicating passage (13) formed in the first passage block (5). An orifice (20) is provided between the second on-off valve-corresponding outflow passage (15) and the communicating passage (13).Type: GrantFiled: April 5, 2016Date of Patent: August 25, 2020Assignee: FUJIKIN INCORPORATEDInventors: Keisuke Ishibashi, Tsuyoshi Tanikawa, Michio Yamaji, Takashi Funakoshi, Hidenori Kiso, Tsuneyuki Okabe, Hiroaki Kikuchi, Kuniyasu Sakashita
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Publication number: 20180179630Abstract: A film forming apparatus includes: a substrate holding member for vertically holding target substrates at predetermined intervals in multiple stages; a process vessel for accommodating the substrate holding member; a processing gas introduction member each having gas discharge holes which discharge a processing gas for film formation in a direction parallel to each target substrate and introduce the processing gas into the process vessel; an exhaust mechanism for exhausting the interior of the process vessel; and a plurality of gas flow adjustment members installed to face the target substrates, respectively. Each of the gas flow adjustment members adjusts a gas flow of the processing gas discharged horizontally above each of the target substrates from the gas discharge holes of the processing gas introduction member, to be directed from above the respective target substrate located below the respective gas flow adjustment member toward the surface of the respective target substrate.Type: ApplicationFiled: December 13, 2017Publication date: June 28, 2018Inventors: Yoshihiro TAKEZAWA, Kuniyasu SAKASHITA, Shigeru NAKAJIMA
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Publication number: 20180112788Abstract: A first on-off valve 2 and a second on-off valve 3 each are a two-port valve. A first passage block 5 is provided with a first on-off valve-corresponding inflow passage 11 and a first on-off valve-corresponding outflow passage 12. A second passage block 6 is provided with a second on-off valve-corresponding inflow passage 14 and a second on-off valve-corresponding outflow passage 15. The second on-off valve-corresponding outflow passage 15 is in communication with an upstream side portion of the first on-off valve-corresponding outflow passage 12 via a communicating passage 13 formed in the first passage block 5. An orifice 20 is provided between the second on-off valve-corresponding outflow passage 15 and the communicating passage 13.Type: ApplicationFiled: April 5, 2016Publication date: April 26, 2018Inventors: Keisuke Ishibashi, Tsuyoshi Tanikawa, Michio Yamaji, Takashi Funakoshi, Hidenori Kiso, Tsuneyuki Okabe, Hiroaki Kikuchi, Kuniyasu Sakashita