Patents by Inventor Kuniyoshi Okamoto

Kuniyoshi Okamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190315721
    Abstract: Provided is an additive for imparting ultraviolet absorbency, or an additive for imparting a high refractive index, which has satisfactory compatibility with a resin serving as a matrix and can maintain high transparency even if added in high concentrations. Also provided is an additive with which the function of imparting both ultraviolet absorbency and a high refractive index can be realized by means of one kind of additive. This additive is represented by the following Formula (I): wherein at least one of R1a to R9a is a monovalent sulfur-containing group represented by the following Formula (i-1) or Formula (i-2): wherein R10a to R12a each represent a divalent hydrocarbon group or the like; and R13a represents a monovalent hydrocarbon group or the like.
    Type: Application
    Filed: April 25, 2019
    Publication date: October 17, 2019
    Applicants: Miyoshi Oil & Fat Co., Ltd., Tokai Optical Co., Ltd.
    Inventors: Koji KAWAI, Kotaro KANEKO, Nobuhiro KANEKO, Yuichi SHISHINO, Kuniyoshi OKAMOTO
  • Publication number: 20190315722
    Abstract: Provided is an additive for imparting ultraviolet absorbency, or an additive for imparting a high refractive index, which has satisfactory compatibility with a resin serving as a matrix and can maintain high transparency even if added in high concentrations. Also provided is an additive with which the function of imparting both ultraviolet absorbency and a high refractive index can be realized by means of one kind of additive. This additive is represented by the following Formula (I): wherein at least one of R1a to R9a is a monovalent sulfur-containing group represented by the following Formula (i-1) or Formula (i-2): ?R10a?mSH??(i-1) ?R11a?nS?R12a—S?pR13a??(i-2) wherein R10a to R12a each represent a divalent hydrocarbon group or the like; and R13a represents a monovalent hydrocarbon group or the like.
    Type: Application
    Filed: April 25, 2019
    Publication date: October 17, 2019
    Applicants: Miyoshi Oil & Fat Co., Ltd., Tokai Optical Co., Ltd.
    Inventors: Koji KAWAI, Kotaro KANEKO, Nobuhiro KANEKO, Yuichi SHISHINO, Kuniyoshi OKAMOTO
  • Patent number: 10411617
    Abstract: A dielectric elastomer motor includes an artificial muscle and a conversion mechanism cooperating with the artificial muscle. The artificial muscle includes a dielectric elastomer film or layer having a first surface and a second surface opposite to the first surface. First and second electrodes are attached to the first surface and the second surface of the dielectric elastomer film, respectively. First and second bases are attached to the dielectric elastomer so as to be spaced apart from each other. The first base and the second base are capable of reciprocation relative to each other upon change in size of the dielectric elastomer. The conversion mechanism converts the reciprocation of the bases to pivotal or rotational movement. The dielectric elastomer receives voltage application with a predetermined timing via the first and the second electrodes.
    Type: Grant
    Filed: January 13, 2017
    Date of Patent: September 10, 2019
    Assignees: KUREHA ELASTOMER CO., LTD.
    Inventors: Seiki Chiba, Mikio Waki, Yoshinori Tanaka, Kuniyoshi Okamoto, Kazuya Nagase, Naoaki Tsurumi, Syo Kurita, Makoto Takasugi, Nobuhiro Miyagi
  • Publication number: 20190248766
    Abstract: Provided is an additive for imparting ultraviolet absorbency, or an additive for imparting a high refractive index, which has satisfactory compatibility with a resin serving as a matrix and can maintain high transparency even if added in high concentrations. Also provided is an additive with which the function of imparting both ultraviolet absorbency and a high refractive index can be realized by means of one kind of additive. This additive is represented by the following Formula (I): wherein at least one of R1a to R9a is a monovalent sulfur-containing group represented by the following Formula (i-1) or Formula (i-2): ?R10a?mSH??(i-1) ?R11a?nS?R12a—S?pR13a??(i-2) wherein R10a to R12a each represent a divalent hydrocarbon group or the like; and R13a represents a monovalent hydrocarbon group or the like.
    Type: Application
    Filed: April 25, 2019
    Publication date: August 15, 2019
    Applicants: Miyoshi Oil & Fat Co., Ltd., Tokai Optical Co., Ltd.
    Inventors: Koji KAWAI, Kotaro KANEKO, Nobuhiro KANEKO, Yuichi SHISHINO, Kuniyoshi OKAMOTO
  • Patent number: 10316024
    Abstract: Provided is an additive for imparting ultraviolet absorbency, or an additive for imparting a high refractive index, which has satisfactory compatibility with a resin serving as a matrix and can maintain high transparency even if added in high concentrations. Also provided is an additive with which the function of imparting both ultraviolet absorbency and a high refractive index can be realized by means of one kind of additive. This additive is represented by the following Formula (I): wherein at least one of R1a to R9a is a monovalent sulfur-containing group represented by the following Formula (i-1) or Formula (i-2): wherein R10a to R12a each represent a divalent hydrocarbon group or the like; and R13a represents a monovalent hydrocarbon group or the like.
    Type: Grant
    Filed: August 5, 2015
    Date of Patent: June 11, 2019
    Assignees: MIYOSHI OIL & FAT CO., LTD., TOKAI OPTICAL CO., LTD.
    Inventors: Koji Kawai, Kotaro Kaneko, Nobuhiro Kaneko, Yuichi Shishino, Kuniyoshi Okamoto
  • Publication number: 20180115260
    Abstract: A dielectric elastomer motor includes an artificial muscle and a conversion mechanism cooperating with the artificial muscle. The artificial muscle includes a dielectric elastomer film or layer having a first surface and a second surface opposite to the first surface. First and second electrodes are attached to the first surface and the second surface of the dielectric elastomer film, respectively. First and second bases are attached to the dielectric elastomer so as to be spaced apart from each other. The first base and the second base are capable of reciprocation relative to each other upon change in size of the dielectric elastomer. The conversion mechanism converts the reciprocation of the bases to pivotal or rotational movement. The dielectric elastomer receives voltage application with a predetermined timing via the first and the second electrodes.
    Type: Application
    Filed: January 13, 2017
    Publication date: April 26, 2018
    Inventors: Seiki CHIBA, Mikio WAKI, Yoshinori TANAKA, Kuniyoshi OKAMOTO, Kazuya NAGASE, Naoaki TSURUMI, Syo KURITA, Makoto TAKASUGI, Nobuhiro MIYAGI
  • Publication number: 20170217937
    Abstract: Provided is an additive for imparting ultraviolet absorbency, or an additive for imparting a high refractive index, which has satisfactory compatibility with a resin serving as a matrix and can maintain high transparency even if added in high concentrations. Also provided is an additive with which the function of imparting both ultraviolet absorbency and a high refractive index can be realized by means of one kind of additive. This additive is represented by the following Formula (I): wherein at least one of R1a to R9a is a monovalent sulfur-containing group represented by the following Formula (i-1) or Formula (i-2): wherein R10a to R12a each represent a divalent hydrocarbon group or the like; and R13a represents a monovalent hydrocarbon group or the like.
    Type: Application
    Filed: August 5, 2015
    Publication date: August 3, 2017
    Applicants: Miyoshi Oil & Fat Co., Ltd., Tokai Optical Co., Ltd.
    Inventors: Koji KAWAI, Kotaro KANEKO, Nobuhiro KANEKO, Yuichi SHISHINO, Kuniyoshi OKAMOTO
  • Publication number: 20170155032
    Abstract: A dielectric elastomer driving mechanism includes a driver, a follower, and a power transmitter. The driver includes a dielectric elastomer driving element made up of a dielectric elastomer layer and two electrode layers sandwiching the dielectric elastomer layer. The driver also includes a tension maintaining element maintaining, in a no-voltage state, the dielectric elastomer driving element in a state in which tension occurs, and includes an output portion capable of moving along with the expanding or contracting of the dielectric elastomer driving element. The follower includes a following element actuating in accordance with a driving force inputted. The power transmitter is connected to the output portion of the driver for transmitting a driving force of the driver to the follower.
    Type: Application
    Filed: November 28, 2016
    Publication date: June 1, 2017
    Inventors: Seiki CHIBA, Mikio WAKI, Yoshinori TANAKA, Kuniyoshi OKAMOTO, Kazuya NAGASE, Naoaki TSURUMI
  • Publication number: 20150155684
    Abstract: A method for manufacturing a semiconductor laser device includes preparing an original substrate having a plurality of semiconductor laser device regions arrayed in a matrix, and a plurality of ridges formed in stripes so as to pass through each of the plurality of semiconductor laser device regions that are aligned in one direction. A scribing process is applied to the original substrate along cutting lines set along boundaries of the plurality of semiconductor laser device regions from a rear surface at an opposite side of a top surface at which the ridges are formed. A blade is applied to the original substrate along each cutting line from the top surface of the original substrate for dividing the original substrate along the cutting line.
    Type: Application
    Filed: February 10, 2015
    Publication date: June 4, 2015
    Inventors: Junichi KASHIWAGI, Kuniyoshi OKAMOTO, Taketoshi TANAKA, Masashi KUBOTA
  • Publication number: 20120189029
    Abstract: A semiconductor laser device includes a semiconductor laminate structure that includes a light emitting layer that contains In, a p-type guide layer disposed at one side of the light emitting layer, an n-type guide layer disposed at another side of the light emitting layer; a p-type clad layer disposed at an opposite side of the p-type guide layer to the light emitting layer, and an n-type clad layer disposed at an opposite side of the n-type guide layer to the light emitting layer. The semiconductor laminate structure includes a rectilinear waveguide formed parallel to a projection vector of a c-axis onto the crystal growth surface, and a pair of laser resonance surfaces formed of cleavage planes perpendicular to the projection vector.
    Type: Application
    Filed: December 6, 2011
    Publication date: July 26, 2012
    Applicant: ROHM CO., LTD.
    Inventors: Junichi Kashiwagi, Kuniyoshi Okamoto, Taketoshi Tanaka, Masashi Kubota
  • Patent number: 8189640
    Abstract: Provided is a laser light emitting device that has light sources of multiple wavelengths including an oscillation wavelength in a green region and the like, and that can be miniaturized. A metal wiring 4 is formed on a supporting substrate 5. A green LD 1 and a red LD 2 are bonded to the metal wiring 4. Each of the green LD 1 and the red LD 2 is a laser diode element formed of a semiconductor having a layered structure. One of a positive electrode and a negative electrode of the element is bonded to the metal wiring 4, and the other electrode is connected to a lead wire 6 or a lead wire 7. The green LD 1 is formed of a GaN-based semiconductor laser diode having a nonpolar plane or a semipolar plane as a main surface for crystal growth. The red LD 2 is formed of an AlInGaP-based semiconductor laser diode.
    Type: Grant
    Filed: May 21, 2008
    Date of Patent: May 29, 2012
    Assignee: Rohm Co., Ltd.
    Inventors: Taketoshi Tanaka, Kuniyoshi Okamoto, Hiroaki Ohta
  • Patent number: 8124982
    Abstract: The semiconductor light-emitting element includes a group III nitride semiconductor multilayer structure having an active layer containing In as well as a p-type layer and an n-type layer stacked to hold the active layer therebetween. The group III nitride semiconductor multilayer structure is made of a group III nitride semiconductor having a major surface defined by a nonpolar plane whose offset angle in a c-axis direction is negative. A remarkable effect is attained when the emission wavelength of the active layer is not less than 450 nm. In the group III nitride semiconductor constituting the group III nitride semiconductor multilayer structure, the offset angle ? in the c-axis direction preferably satisfies ?1°<?<0°.
    Type: Grant
    Filed: June 5, 2008
    Date of Patent: February 28, 2012
    Assignee: Rohm Co., Ltd.
    Inventors: Kuniyoshi Okamoto, Hiroaki Ohta
  • Patent number: 8017932
    Abstract: A light-emitting device includes a group III nitride semiconductor layer of a multilayer structure consisting of a group III nitride semiconductor having a major surface defined by a nonpolar plane or a semipolar plane and having at least an n-type layer and a p-type layer. A surface of the group III nitride semiconductor layer on a light extraction side is a mirror surface. The light-emitting device may further include a transparent electrode in contact with the surface of the group III nitride semiconductor layer on the light extraction side. In this case, a surface of the transparent electrode on the light extraction side is preferably a mirror surface.
    Type: Grant
    Filed: September 21, 2007
    Date of Patent: September 13, 2011
    Assignee: Rohm Co., Ltd.
    Inventors: Kuniyoshi Okamoto, Hiroaki Ohta
  • Patent number: 8013356
    Abstract: A semiconductor light emitting device has a device body made of a group III nitride semiconductor having a major surface defined by a nonpolar plane. In the device body, a contact portion with an n-type electrode includes a crystal plane different from the major surface. For example, the contact portion may include a corrugated surface. More specifically, the contact portion may include a region having a plurality of protrusions parallel to a polar plane formed in a striped manner.
    Type: Grant
    Filed: September 26, 2008
    Date of Patent: September 6, 2011
    Assignee: Rohm Co., Ltd.
    Inventors: Taketoshi Tanaka, Kuniyoshi Okamoto
  • Patent number: 7869482
    Abstract: A semiconductor laser device is made of a group III nitride semiconductor having a major growth surface defined by a nonpolar plane or a semipolar plane. The semiconductor laser device includes a cavity having an active layer containing In and distributed Bragg reflectors coating both cavity end faces of the cavity respectively. In each of the distributed Bragg reflectors, a central wavelength ?c of a reflectance spectrum satisfies the relation ?SP?10 nm??c??SP+10 nm with respect to an emission peak wavelength ?SP of spontaneous emission in the active layer.
    Type: Grant
    Filed: April 2, 2009
    Date of Patent: January 11, 2011
    Assignee: Rohm Co., Ltd.
    Inventors: Masashi Kubota, Kuniyoshi Okamoto, Taketoshi Tanaka
  • Patent number: 7843980
    Abstract: An inventive semiconductor laser diode includes a Group III nitride semiconductor layered structure having a major crystal growth plane defined by a non-polar or semi-polar-plane. The Group III nitride semiconductor layered structure includes: a p-type cladding layer and an n-type cladding layer; an In-containing p-type guide layer and an In-containing n-type guide layer held between the p-type cladding layer and the n-type cladding layer; and an In-containing light emitting layer held between the p-type guide layer and the n-type guide layer.
    Type: Grant
    Filed: May 15, 2008
    Date of Patent: November 30, 2010
    Assignee: Rohm Co., Ltd.
    Inventors: Hiroaki Ohta, Kuniyoshi Okamoto
  • Publication number: 20100295054
    Abstract: The semiconductor light-emitting element includes a group III nitride semiconductor multilayer structure having an active layer containing In as well as a p-type layer and an n-type layer stacked to hold the active layer therebetween. The group III nitride semiconductor multilayer structure is made of a group III nitride semiconductor having a major surface defined by a nonpolar plane whose offset angle in a c-axis direction is negative. A remarkable effect is attained when the emission wavelength of the active layer is not less than 450 nm. In the group III nitride semiconductor constituting the group III nitride semiconductor multilayer structure, the offset angle ? in the c-axis direction preferably satisfies ?1°<?<0°.
    Type: Application
    Filed: June 5, 2008
    Publication date: November 25, 2010
    Applicant: ROHM CO., LTD.
    Inventors: Kuniyoshi Okamoto, Hiroaki Ohta
  • Publication number: 20100195687
    Abstract: A semiconductor laser device has a semiconductor laser diode structure made of group III nitride semiconductors having major growth surfaces defined by nonpolar planes or semipolar planes. The semiconductor laser diode structure includes a p-type cladding layer and an n-type cladding layer, a p-type guide layer and an n-type guide layer held between the p-type cladding layer and the n-type cladding layer, and an active layer containing In held between the p-type guide layer and the n-type guide layer. The In compositions in the p-type guide layer and the n-type guide layer are increased as approaching the active layer respectively. Each of the p-type guide layer and the n-type guide layer may have a plurality of InxGa1-xN layers (0?x?1). In this case, the plurality of InxGa1-xN layers may be stacked in such order that the In compositions therein are increased as approaching the active layer.
    Type: Application
    Filed: February 1, 2010
    Publication date: August 5, 2010
    Applicant: ROHM CO., LTD.
    Inventors: Kuniyoshi Okamoto, Masashi Kubota, Taketoshi Tanaka, Junichi Kashiwagi, Yoshinori Tanaka
  • Publication number: 20100189155
    Abstract: Provided is a laser light emitting device that has light sources of multiple wavelengths including an oscillation wavelength in a green region and the like, and that can be miniaturized. A metal wiring 4 is formed on a supporting substrate 5. A green LD 1 and a red LD 2 are bonded to the metal wiring 4. Each of the green LD 1 and the red LD 2 is a laser diode element formed of a semiconductor having a layered structure. One of a positive electrode and a negative electrode of the element is bonded to the metal wiring 4, and the other electrode is connected to a lead wire 6 or a lead wire 7. The green LD 1 is formed of a GaN-based semiconductor laser diode having a nonpolar plane or a semipolar plane as a main surface for crystal growth. The red LD 2 is formed of an AlInGaP-based semiconductor laser diode.
    Type: Application
    Filed: May 21, 2008
    Publication date: July 29, 2010
    Inventors: Taketoshi Tanaka, Kuniyoshi Okamoto, Hiroaki Ohta
  • Publication number: 20100096615
    Abstract: A light-emitting device includes a group III nitride semiconductor layer of a multilayer structure consisting of a group III nitride semiconductor having a major surface defined by a nonpolar plane or a semipolar plane and having at least an n-type layer and a p-type layer. A surface of the group III nitride semiconductor layer on a light extraction side is a mirror surface. The light-emitting device may further include a transparent electrode in contact with the surface of the group III nitride semiconductor layer on the light extraction side. In this case, a surface of the transparent electrode on the light extraction side is preferably a mirror surface.
    Type: Application
    Filed: September 21, 2007
    Publication date: April 22, 2010
    Applicant: ROHM CO., LTD.
    Inventors: Kuniyoshi Okamoto, Hiroaki Ohta