Abstract: An electron-emitting woven fabric according to the present invention is intended to provide an electron emission source that can be produced extremely easily, readily shaped to have a large area, and used for a wide variety of applications including a display device. The electron-emitting woven fabric according to the present invention is characterized in that first linear bodies 3 composed of a conductive layer 1 and an insulating layer 2 covering the conductive layer 1 and second linear bodies 4 of a conductive material are crossed. Another mode of the electron-emitting woven fabric according to the present invention is characterized in that a carbonaceous material is provided on a surface of each of crossed parts of the second linear bodies crossing the first linear bodies at lifted portions and/or sunk portions of the first linear bodies.

Abstract: It is devised to transport plasma including charged particles made of containment target atom ions and charged particles of a polarity opposite to that of the containment target atom ions, up to an empty fullerene film on a deposition-assistance substrate by a uniform magnetic field, and to give acceleration energies to the containment target atoms by a bias voltage applied to the deposition-assistance substrate, thereby implanting the containment target atoms into the fullerene film. Since attractive forces act between the charged particles constituting the plasma so that the plasma is not diverged, it becomes possible to achieve a high density ion implantation to improve a yield of containing-fullerene even in ion implantation with a low energy.

Abstract: An electron-emitting woven fabric according to the present invention is intended to provide an electron emission source that can be produced extremely easily, readily shaped to have a large area, and used for a wide variety of applications including a display device. The electron-emitting woven fabric according to the present invention is characterized in that first linear bodies 3 composed of a conductive layer 1 and an insulating layer 2 covering the conductive layer 1 and second linear bodies 4 of a conductive material are crossed. Another mode of the electron-emitting woven fabric according to the present invention is characterized in that a carbonaceous material is provided on a surface of each of crossed parts of the second linear bodies crossing the first linear bodies at lifted portions and/or sunk portions of the first linear bodies.

Abstract: Provided is a system for manufacturing a fullerene derivative whereby it is possible to heat electrons in a plasma highly efficiently and to attain the improved yield of a fullerene derivative. The system can generate a high electron temperature plasma using plasma generating elements including a microwave generator, mirror field generating coil, and four phased helical antenna. Thus, with this system, the production efficiency of the ions of an atom which acts as a moiety in the production of a fullerene derivative is improved, and the yield of a fullerene derivative is also improved.

Abstract: A method for producing endohedral fullerenes at a higher yield and an apparatus therefor are disclosed. The apparatus includes a vacuum vessel (1), elements (3, 4) for generating a plasma current (2) of atoms to be contained, elements (8) for introducing fullerenes into the plasma current (2), a holding member (6) for holding a plurality of division plates (5a, 5b, 5c) concentrically divided and arranged in the downstream region of the plasma current (2), and a bias-applying unit (7a, 7b, 7c) for applying an arbitrary bias voltage to the division plates (5a, 5b, 5c).