Abstract: Provided is a hole-blocking layer which has excellent basic characteristics such as high photoelectric conversion efficiency, while exhibiting excellent productivity. The hole-blocking layer is produced by a process that has a step of bringing an aqueous solution containing hydrogen peroxide and titanium (IV) oxysulfate into contact with the surface of a member on which the hole-blocking layer is to be formed, and holding the contact between the aqueous solution and the member at 50 to 120° C., so that an amorphous titanium oxide precursor precipitates on the surface of the member; and a step of drying the amorphous titanium oxide precursor that has precipitated on the member.

Abstract: A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.

Abstract: A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.

Abstract: In order to isolate and purify an endohedral fullerene, a solvent washing was performed using toluene to concentrate the endohedral fullerene in a residual, but endohedral fullerene could not be efficiently purified because impurities other than the endohedral fullerene could not be sufficiently removed. Thus, the endohedral fullerene is isolated and purified by using a solvent such as chloronaphthalene or tetralin having a high solubility for the endohedral fullerene and concentrating the endohedral fullerene in the solvent. The endohedral fullerene isolated and purified by solvent extraction has a cluster structure where the endohedral fullerene is surrounded with empty fullerenes. Thus, this endohedral fullerene is highly stable and is a useful material applicable to various fields such as medical care and electronics.

Abstract: Provided is a hole-blocking layer which has excellent basic characteristics such as high photoelectric conversion efficiency, while exhibiting excellent productivity. The hole-blocking layer is produced by a process that has a step of bringing an aqueous solution containing hydrogen peroxide and titanium (IV) oxysulfate into contact with the surface of a member on which the hole-blocking layer is to be formed, and holding the contact between the aqueous solution and the member at 50 to 120° C., so that an amorphous titanium oxide precursor precipitates on the surface of the member; and a step of drying the amorphous titanium oxide precursor that has precipitated on the member.

Abstract: A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.

Abstract: In order to isolate and purify an endohedral fullerene, a solvent washing was performed using toluene to concentrate the endohedral fullerene in a residual, but endohedral fullerene could not be efficiently purified because impurities other than the endohedral fullerene could not be sufficiently removed. Thus, the endohedral fullerene is isolated and purified by using a solvent such as chloronaphthalene or tetralin having a high solubility for the endohedral fullerene and concentrating the endohedral fullerene in the solvent. The endohedral fullerene isolated and purified by solvent extraction has a cluster structure where the endohedral fullerene is surrounded with empty fullerenes. Thus, this endohedral fullerene is highly stable and is a useful material applicable to various fields such as medical care and electronics.

Abstract: A device and a method capable of producing induction fullerene with high yield are provided. Nitrogen gas being an object to be induced is introduced into a plasma flow producing chamber and a high-temperature flow forming chamber to form a high-temperature plasma flow consisting of nitrogen ions and electrons. A negative voltage is applied to a grid 105 to keep low electron energy in the high-temperature plasma flow. Then by making electrons collide with fullerene introduced from a fullerene sublimating oven 107, electrons are bonded to the fullerene and thereby the fullerene is ionized. A recovering cylinder 112 is disposed in an induction fullerene accumulating chamber so as to enclose a plasma flow. In this fullerene accumulating chamber, induction fullerene such as nitrogen-substitution hetero fullerene and nitrogen-included fullerene is produced and deposited in the recovering chamber 112.

Abstract: In a field emission cathode emitting an electron beam modulated by any desired high frequency, a cathode tip is formed in one surface of an N type semiconductor substrate constituting a collector region, an insulating layer formed on the one surface of the semiconductor substrate to have an opening which surrounds said cathode tip, a gate electrode is formed on the insulating layer to have an opening which surrounds the cathode tip, a P type base region is formed in the other surface of the semiconductor substrate, a base electrode is formed on the base region, an N type emitter region is formed in the base region, and an emitter electrode is formed on the emitter region. A DC supply source is connected across the gate electrode and the emitter electrode and a high frequency supply source is connected across the base electrode and the emitter electrode.

Abstract: In a peniotron, a hollow electron beam is generated from a cathode gun assembly and a DC magnetic field is applied to the electron beam from solenoid coils. Thus, each electron of the electron beam is gyrated into a resonant cavity and into propagating waveguide sections which are maintained in auto-resonant conditions so that the electrons interact with an electromagnetic waves of TE mode not only in the resonant cavity section but also in a waveguide section. Accordingly, the electromagnetic wave is oscillated in the resonant waveguide section and amplified in the propagating waveguide section in such a manner that the level of the electromagnetic wave in the resonant cavity section is far less than the output power from said propagating waveguide.

Abstract: An ion pump for producing an ultrahigh degree of vacuum comprising a space formed between a first perforated flat plate-shaped electrode and a second flat plate-shaped electrode and having a high frequency electric source connected between the first and second electrodes, said space being operative to induce multipactor effect between said first and second electrodes, and an ionization space adjacent to one of said first and second electrodes and formed between a first perforated getter electrode and a second getter electrode applied with a negative potential, said ionization space being operative to cause the moving electrons produced by the multipactor effect to collide with gas molecules and ionize the latter.