Abstract: Provided are a light intensity detection circuit, a light intensity detection method and an light intensity detection apparatus. The light intensity detection circuit includes a photoelectric conversion sub-circuit, a source follower sub-circuit, a reset sub-circuit, a read sub-circuit and a sense sub-circuit. The photoelectric conversion sub-circuit generates a corresponding electrical signal according to an incident light signal, and outputs it to a first node; the source follower sub-circuit generates a corresponding voltage signal or current signal according to the electrical signal of the first node and outputs it to a second node; the read sub-circuit reads the voltage signal or current signal of the second node to determine an incident light intensity; the reset sub-circuit provides a voltage at a offset voltage terminal to the first node.

Abstract: Provided is a pixel sensing circuit, including a signal generation sub-circuit, a reset sub-circuit, an amplification sub-circuit, and a read sub-circuit. The reset sub-circuit is configured to provide a signal of a first power supply line to a first node under control of a reset signal line. The signal generation sub-circuit is configured to detect a light signal and convert the detected light signal into an electrical signal. The amplification sub-circuit is configured to provide an amplified electrical signal to a second node according to a signal provided by a second power supply line and under control of the first node. The read sub-circuit is configured to output the amplified electrical signal to a signal read line under control of a scan signal line.

Abstract: A radiation detector having a plurality of pixels is provided. A respective one of the plurality of pixels includes a base substrate; a thin film transistor on the base substrate; an insulating layer on a side of the thin film transistor away from the base substrate; a photosensor on a side of the insulating layer away from the base substrate; a passivation layer on a side of the photosensor away from the base substrate; a scintillation layer on a side of the passivation layer away from the base substrate; and a reflective layer on a side of the scintillation layer away from the base substrate. The photosensor includes a first polarity layer in direct contact with the passivation layer. All sides of the first polarity layer other than a side internal to the photosensor are entirely in direct contact with the passivation layer.

Abstract: Provided are a detection substrate and a ray detector. The detection substrate includes: a base substrate; a plurality of detection pixels located on the base substrate, at least one detection pixel serves as a detection marking pixel. The detection marking pixel includes: a storage capacitor, a first electrode plate of the storage capacitor coupled to a bias voltage end; a discharge circuit configured to write a signal of the bias voltage end into a second electrode plate of the storage capacitor under the control of a first scanning signal end; and a reading circuit coupled to an external reading circuit, the reading circuit configured to write the voltage of the second electrode plate of the storage capacitor into the external reading circuit and write a reference signal of the external reading circuit into the second electrode plate of the storage capacitor under the control of a second scanning signal end.

Abstract: A radiation detector having a plurality of pixels is provided. A respective one of the plurality of pixels includes a base substrate; a thin film transistor on the base substrate; an insulating layer on a side of the thin film transistor away from the base substrate; a photosensor on a side of the insulating layer away from the base substrate; a passivation layer on a side of the photosensor away from the base substrate; a scintillation layer on a side of the passivation layer away from the base substrate; and a reflective layer on a side of the scintillation layer away from the base substrate. The photosensor includes a first polarity layer in direct contact with the passivation layer. All sides of the first polarity layer other than a side internal to the photosensor are entirely in direct contact with the passivation layer.

Abstract: Detection substrate, detection panel and photoelectric detection device are provided. The detection substrate includes: a detection region and a non-detection region surrounding the detection region, wherein the detection region includes a plurality of detection units in an array and a plurality of bias voltage lines; each of the detection units includes: a driving circuit, and a photoelectric conversion circuit electrically connected with the driving circuit; wherein the bias voltage lines are electrically connected with the photoelectric conversion circuits; the non-detection region comprises: input terminals electrically connected with the bias voltage lines, and voltage compensation circuits electrically connected between the input terminals and the bias voltage lines; and the voltage compensation circuits are configured to offset a voltage generated by the photoelectric conversion circuits under ambient light in a manufacturing process of the detection substrate.

Abstract: Provided are a light intensity detection circuit, a light intensity detection method and an light intensity detection apparatus. The light intensity detection circuit includes a photoelectric conversion sub-circuit, a source follower sub-circuit, a reset sub-circuit, a read sub-circuit and a sense sub-circuit. The photoelectric conversion sub-circuit generates a corresponding electrical signal according to an incident light signal, and outputs it to a first node; the source follower sub-circuit generates a corresponding voltage signal or current signal according to the electrical signal of the first node and outputs it to a second node; the read sub-circuit reads the voltage signal or current signal of the second node to determine an incident light intensity; the reset sub-circuit provides a voltage at a offset voltage terminal to the first node.

Abstract: Provided is a pixel sensing circuit, including a signal generation sub-circuit, a reset sub-circuit, an amplification sub-circuit, and a read sub-circuit. The reset sub-circuit is configured to provide a signal of a first power supply line to a first node under control of a reset signal line. The signal generation sub-circuit is configured to detect a light signal and convert the detected light signal into an electrical signal. The amplification sub-circuit is configured to provide an amplified electrical signal to a second node according to a signal provided by a second power supply line and under control of the first node. The read sub-circuit is configured to output the amplified electrical signal to a signal read line under control of a scan signal line.

Abstract: The present disclosure relates to a pixel sensor, a control method thereof, and a detector. The pixel sensor includes a photoelectric conversion circuit, an energy storage circuit, a reset circuit, a first switch circuit, and a second switch circuit; wherein, the energy storage circuit is connected to the photoelectric conversion circuit, and the photoelectric conversion circuit is further connected to a second power supply; a control end of the reset circuit is connected to a second scanning signal end; the first switch circuit is connected between the first power supply and a first node, and a control end thereof is connected to the first end of the energy storage circuit; second switch circuit is connected between the first node and a signal output end, and a control end thereof is connected to a first scanning signal end.

Abstract: The present disclosure relates to a pixel sensor, a control method thereof, and a detector. The pixel sensor includes a photoelectric conversion circuit, an energy storage circuit, a reset circuit, a first switch circuit, and a second switch circuit; wherein, the energy storage circuit is connected to the photoelectric conversion circuit, and the photoelectric conversion circuit is further connected to a second power supply; a control end of the reset circuit is connected to a second scanning signal end; the first switch circuit is connected between the first power supply and a first node, and a control end thereof is connected to the first end of the energy storage circuit; second switch circuit is connected between the first node and a signal output end, and a control end thereof is connected to a first scanning signal end.

Abstract: Detection substrate, detection panel and photoelectric detection device are provided. The detection substrate includes: a detection region and a non-detection region surrounding the detection region, wherein the detection region includes a plurality of detection units in an array and a plurality of bias voltage lines; each of the detection units includes: a driving circuit, and a photoelectric conversion circuit electrically connected with the driving circuit; wherein the bias voltage lines are electrically connected with the photoelectric conversion circuits; the non-detection region comprises: input terminals electrically connected with the bias voltage lines, and voltage compensation circuits electrically connected between the input terminals and the bias voltage lines; and the voltage compensation circuits are configured to offset a voltage generated by the photoelectric conversion circuits under ambient light in a manufacturing process of the detection substrate.