Abstract: The present invention relates to a system for diagnosis and management of indoor air quality, and more particularly to a system for diagnosis and management of indoor air quality which is capable of obtaining and analyzing air quality data by measuring the indoor air quality of a vehicle or accommodation space and of detecting smoking or non-smoking, the type of smoking, and an abnormal situation by diagnosing at least one of indoor smoking and smoking types. In addition, the present invention relates to a technology for facilitating the management of accommodation by efficiently diagnosing indoor air quality.

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

Abstract: Provided is a peptide composition for preventing or treating Alzheimer's dementia. A peptide or a salt substituent thereof according to the presently claimed subject matter exhibits effects such as suppression of LPS-mediated cytokine production, suppression of LPS-induced neuroinflammation, amelioration of cognitive impairment, suppression of beta amyloid or tau protein aggregation, and suppression of neuronal loss. The polypeptide or the salt substituent thereof can permeate the blood-brain barrier, and thus, is expected to be usefully used for preventing or treating Alzheimer's dementia.

Abstract: A quantum dot light-emitting device including first electrode and a second electrode, a quantum dot layer between the first electrode and the second electrode, a first electron transport layer and a second electron layer disposed between the quantum dot layer and the second electrode. The second electron transport layer is disposed between the quantum dot layer and the first electron transport layer, wherein each of the first electron transport layer and the second electron transport layer includes an inorganic material. A lowest unoccupied molecular orbital energy level of the second electron transport layer is shallower than a lowest unoccupied molecular orbital energy level of the first electron transport layer, and a lowest unoccupied molecular orbital energy level of the quantum dot layer is shallower than a lowest unoccupied molecular orbital energy level of the second electron transport layer. An electronic device including the quantum dot light-emitting device.

Abstract: An endpoint detection device, a plasma reactor with the endpoint detection device, and an endpoint detection method are provided. The endpoint detection device includes an OES data operation unit, a data selector, a product generator, an SVM, and an endpoint determiner. The OES data operation unit processes reference OES data by normalization and PCA. The data selector selects part of the linear reference loading vectors and selects part of the selected linear reference loading vectors. The product generator outputs at least one reference product value. The SVM performs regression and outputs a prediction product value. The endpoint determiner detects a process wafer etch or deposition endpoint and outputs a detection signal.

Abstract: A method for manufacturing a solar cell includes conducting texturing by injecting plasma on an entire surface of a solar cell wafer, forming an emitter layer by diffusing a solid source on the textured solar cell wafer, forming a passivation layer on the solar cell wafer on which the emitter layer is formed, and forming electrodes. A PSG (PhosphoSilicate Glass) layer is prevented from being formed on the solar cell wafer.

Abstract: A plasma texturing reaction apparatus includes a chamber including a dielectric window and a chamber body and receiving a solar cell wafer to be textured, and a polygonal induction coil provided at an outer upper portion of the dielectric window to generate a magnetic field for generating plasma, a high frequency low power supply unit that supplies a cathode of the chamber with high frequency power corresponding to process conditions, and a high frequency source power supply unit that supplies the polygonal induction coil with high frequency power.

Abstract: An endpoint detection device, a plasma reactor with the endpoint detection device, and an endpoint detection method are provided. The endpoint detection device includes an OES data operation unit, a data selector, a product generator, an SVM, and an endpoint determiner. The OES data operation unit processes reference OES data by normalization and PCA. The data selector selects part of the linear reference loading vectors and selects part of the selected linear reference loading vectors. The product generator outputs at least one reference product value. The SVM performs regression and outputs a prediction product value. The endpoint determiner detects a process wafer etch or deposition endpoint and outputs a detection signal.

Abstract: A plasma texturing apparatus for a solar cell includes a susceptor having engagement projections to prevent a wafer mounted therein from slipping outward or fluctuating back and forth when aligning the wafer over a cathode for plasma texturing; a focus ring functioning to confine plasma when conducting a plasma texturing process; and a clamp placed on an inner surface of the focus ring in such a way as to have a downward slope, and having one end which is coupled to the focus ring and the other end which faces away from the one end, is formed to be pointed and functions to squeeze and support peripheral portions of the wafer.

Abstract: An endpoint detection device, a plasma reactor with the endpoint detection device, and an endpoint detection method are provided. The endpoint detection device includes an OES data operation unit, a data selector, a product generator, an SVM, and an endpoint determiner. The OES data operation unit processes reference OES data by normalization and PCA. The data selector selects part of the linear reference loading vectors and selects part of the selected linear reference loading vectors. The product generator outputs at least one reference product value. The SVM performs regression and outputs a prediction product value. The endpoint determiner detects a process wafer etch or deposition endpoint and outputs a detection signal.

Abstract: An endpoint detection device, a plasma reactor with the endpoint detection device, and an endpoint detection method are provided. The endpoint detection device includes an OES data operation unit, a data selector, a product generator, an SVM, and an endpoint determiner. The OES data operation unit processes reference OES data by normalization and PCA. The data selector selects part of the linear reference loading vectors and selects part of the selected linear reference loading vectors. The product generator outputs at least one reference product value. The SVM performs regression and outputs a prediction product value. The endpoint determiner detects a process wafer etch or deposition endpoint and outputs a detection signal.

Abstract: An etching gas control system is provided. The system includes a gas injector, a gas supply pipe, a Flow Ratio Controller (FRC), and a gas supply unit. The gas injector is installed in a chamber and supplies gas inside the chamber. The gas injector includes a top injector installed at a top of the chamber and a side injector installed at a side of the chamber. The gas supply pipe connects and supplies gas to the gas injector. The FRC connects to the gas supply pipe and controls supply of gas. The gas supply unit supplies gas to the FRC.

Abstract: Disclosed is a method for forming a contact hole in the process of manufacturing a logic device employing a shallow trench isolation (STI) method. The method prevents an isolation region from being damaged because there is little overlap margin for a contact hole in the active region, when a contact hole is formed in an isolation region beyond the border of an active region, that is, when a borderless contact hole is formed. According to the method, a silicon nitride layer used as an etch-stop layer is formed in the process of providing the STI, thereby avoiding deterioration of the characteristics of a resulting semiconductor device.

Abstract: Disclosed is a method for forming a contact hole in the process of manufacturing a logic device employing a shallow trench isolation (STI) method. The method prevents an isolation region from being damaged because there is little overlap margin for a contact hole in the active region, when a contact hole is formed in an isolation region beyond the border of an active region, that is, when a borderless contact hole is formed. According to the method, a silicon nitride layer used as an etch-stop layer is formed in the process of providing the STI, thereby avoiding deterioration of the characteristics of a resulting semiconductor device.