Abstract: The present disclosure discloses an air bridge manufacturing method, a quantum chip, and a quantum computer, and relates to the field of quantum chip technologies. One method, performed by a photolithography device, includes constructing a bridge support structure for an air bridge on a substrate with a coplanar waveguide by using photoresist; performing ion beam milling processing on the substrate with the bridge support structure to obtain an initial air bridge, the ion beam milling processing being configured for denaturing photoresist on a surface layer of the bridge support structure; and performing light-illumination processing and photoresist removal processing on a photoresist region comprising denatured photoresist in the initial air bridge, to obtain the air bridge. Through embodiments of the present disclosure, a photoresist removal effect can be improved, and a success rate of air bridge manufacturing can be improved.

Abstract: This application provides a method for preparing a quantum chip. The method includes the following steps: determining an initial eigenfrequency of a chip substrate; performing, based on a numerical comparison result between the initial eigenfrequency and a quantum operating frequency, pattern etching on a first surface of the chip substrate to obtain a chip substrate with an intact second surface and the first surface with a target pattern, wherein the quantum operating frequency is an operating frequency of a quantum bit of a quantum circuit, the second surface is opposite to the first surface, and the target pattern is a pattern when a difference between the initial eigenfrequency of the chip substrate and the quantum operating frequency is maximum; and etching, on the second surface of the pattern-etched chip substrate, the quantum circuit to form the quantum chip.

Abstract: A method and system for preparing a Josephson junction is disclosed, relates to the technical field of micro-nano processing. The method includes: preparing a circuit structure on a substrate by nano-imprinting, the circuit structure comprising a first lead, a second lead, and a peripheral circuit connected to the first and second leads; preparing a photoresist-based undercut structure on the substrate; the undercut structure comprising a first region and a second region having upper photoresist layers and lower layers of hollow-out; the second region being an opening region of the undercut structure; preparing an oxide layer on a surface of the second lead which is not covered by the photoresist; evaporating a first superconducting layer obliquely in a direction from the first region to the second region to obtain the Josephson junction; and evaporating a second superconducting layer obliquely in a direction from the second region to the first region.

Abstract: A method and device for preparing a Josephson junction are provided. The method includes: preparing a photoresist film layer comprising an undercut structure on a substrate, the undercut structure comprising a first strip-shaped opening and a second strip-shaped opening; performing, at a first angle, evaporation on the photoresist film layer obliquely to the substrate, to prepare a first strip-shaped superconducting layer through the first strip-shaped opening; and performing, at a second angle, evaporation on the photoresist film layer obliquely to the substrate, to prepare a second strip-shaped superconducting layer through the second strip-shaped opening, the first strip-shaped superconducting layer and the second strip-shaped superconducting layer crossing each other, and an intersection of the first strip-shaped superconducting layer and the second strip-shaped superconducting layer being isolated by an oxidation layer to form a Josephson junction.

Abstract: A through silicon via interconnection structure and a method of forming same, and a quantum computing device are provided. The method includes: providing a silicon wafer, having a first surface and a second surface opposite to each other; forming, in the silicon wafer, a through silicon via penetrating through the silicon wafer in a direction from the first surface to the second surface of the silicon wafer; forming a groove communicating with the through silicon via in a target surface of the first surface and the second surface of the silicon wafer using a photolithography process; and forming a superconducting thin film in the groove and the through silicon via to obtain the through silicon via interconnection structure.

Abstract: The present disclosure discloses a through-silicon-via structure and a method for preparing the same, a through-silicon-via interconnection structure and a method for preparing the same, and an electronic device, and belongs to the technical of semiconductors. The method includes forming an initial through hole running through a silicon-based substrate, forming a silicon oxide film on an inner wall of the initial through hole through oxidization, and removing the silicon oxide film to obtain a through-silicon-via structure with a through-silicon-via. The inner wall of the initial through hole will gradually tend to be smooth after being oxidized to form the silicon oxide film with a certain thickness, so that the inner wall of the through-silicon-via of the through-silicon-via structure formed after the silicon oxide film is removed is relatively smooth, which will not affect the quality of the conducting material subsequently grown on the inner wall of the through-silicon-via.

Abstract: This application discloses a coating method for making a chip. The method includes: fixing a substrate on a base. The substrate includes a hole. The method includes controlling an included angle between a plane on which the substrate is located and a deposition direction of a coating material to be greater than 0 degrees and less than 90 degrees. The method includes controlling the substrate to rotate with respect to an axis perpendicular to the plane on which the substrate is located. The method includes during the rotation of the substrate, controlling the coating material to enter the hole along the deposition direction such that the coating material is deposited on a sidewall of the hole.