Abstract: A device includes a substrate and a set of force sensors supported by the substrate. Each force sensor includes a pillar extending outward from the substrate, each pillar comprising a stack of semiconductor layers, the stack of semiconductor layers being configured to emit light upon biasing of the stack of semiconductor layers, and post disposed along only a portion of a perimeter of the pillar such that, taken together, the pillar and the post have an asymmetrical cross-sectional shape. Each pillar has a cross-section elongated along an axis. An orientation of the axis, and a peripheral position of the portion of the perimeter at which the post is disposed, differ across the set of force sensors such that a variation in light emitted by the stack of semiconductor layers of one or more of the force sensors is indicative of a direction of a shear force applied to the set of force sensors.

Abstract: Additive color mixing across the visible spectrum was demonstrated from a light emitting diode (LED) pixel comprising of red, green, and blue subpixels monolithically integrated and enabled by local strain engineering. The device was fabricated using a top-down approach on a metal-organic chemical vapor deposition-grown sample consisting of a typical LED epitaxial stack. The three color subpixels were defined in a single lithographic step. The device was characterized for its electrical properties and emission spectra under an uncooled condition, which is desirable in practical applications. The color mixing was controlled by pulse width modulation and the degree of color control was also characterized.

Abstract: Additive color mixing across the visible spectrum was demonstrated from a light emitting diode (LED) pixel comprising of red, green, and blue subpixels monolithically integrated and enabled by local strain engineering. The device was fabricated using a top-down approach on a metal-organic chemical vapor deposition-grown sample consisting of a typical LED epitaxial stack. The three color subpixels were defined in a single lithographic step. The device was characterized for its electrical properties and emission spectra under an uncooled condition, which is desirable in practical applications. The color mixing was controlled by pulse width modulation and the degree of color control was also characterized.

Abstract: Provided are an optical device and a method for manufacturing same. The optical device according to the present invention including: a transparent amorphous substrate; a current injection layer formed on the substrate; a graphite layer formed on the current injection layer; and a semiconductor unit formed on the graphite layer, wherein the semiconductor unit is formed after forming the graphite layer on the amorphous substrate, thereby overcoming the problems of conventional methods that involve forming a semiconductor unit on an amorphous substrate, and the semiconductor unit of the present invention has superior crystallinity.

Abstract: The present invention provides a light-emitting element comprising: a carbon layer comprising a graphene; a plurality of fine structures having grown toward the upper side of the carbon layer; a thin film layer for coating the fine structures; and a light-emitting structure layer formed on the thin film layer.

Abstract: Provided are an optical device and a method for manufacturing same. The optical device according to the present invention including: a transparent amorphous substrate; a current injection layer formed on the substrate; a graphite layer formed on the current injection layer; and a semiconductor unit formed on the graphite layer, wherein the semiconductor unit is formed after forming the graphite layer on the amorphous substrate, thereby overcoming the problems of conventional methods that involve forming a semiconductor unit on an amorphous substrate, and the semiconductor unit of the present invention has superior crystallinity.

Abstract: An electronic device includes a carbon layer including graphene or graphite and a thin film formed on the carbon layer. The electronic device may further include a drain electrode, a source electrode and/or a gate electrode formed on the thin film. A method of manufacturing an electronic device includes preparing a carbon layer including graphene or graphite, forming a nanostructure on the carbon layer, and forming a thin film to cover the nanostructure.

Abstract: The present invention provides a light-emitting element comprising: a carbon layer comprising a graphene; a plurality of fine structures having grown toward the upper side of the carbon layer; a thin film layer for coating the fine structures; and a light-emitting structure layer formed on the thin film layer.