Abstract: A light-emitting diode device including a substrate, a structural layer, and a light-emitting diode mesa is provided. The substrate has a first surface and a second surface arranged opposite each other. The first surface includes a first region and a second region, and the second region surrounds the first region. The structural layer covers the first region and the second region and at least includes an electrode layer, a second insulating layer, and a first insulating layer stacked in sequence from the first surface. The light-emitting diode mesa is arranged above the first region of the structural layer and includes a semiconductor epitaxial layer. The semiconductor epitaxial layer includes a second semiconductor layer, an active layer, and a first semiconductor layer stacked in sequence from the first surface.

Abstract: A light-emitting diode includes an epitaxial layer, including a first semiconductor layer, a light-emitting layer configured to emit light, and a second semiconductor layer sequentially stacked in that order, and has a first surface and a second surface opposite to each other; a first insulating reflective layer, disposed on the first surface of the epitaxial layer; and a second insulating reflective layer, disposed on the second surface of the epitaxial layer. Reflectivity of the first insulating reflective layer to light with a first incident angle is lower than reflectivity of the second insulating reflective layer to light with a third incident angle, the first incident angle is in a range of 0° to 10°, and the third incident angle is in a range of 0° to 10°. Therefore, a lateral light emission angle and an extreme light emission angle of the light-emitting diode can be improved, which meet market demand.

Abstract: The disclosure relates to a technical field of a semiconductor optoelectronic device, and more particularly, to a light emitting diode and a light emitting device. To solve an issue that a metal layer of the existing light emitting diode has insufficient adhesion on an insulation layer, the light emitting diode includes a semiconductor epitaxial stack layer including a first conductive semiconductor layer, a light emitting layer, and a second conductive semiconductor layer sequentially stacked and disposed; an interface transition layer located above the semiconductor epitaxial stack layer; the interface transition layer including an insulation metal oxide or a stack layer of the insulation metal oxides; a first insulation layer disposed between the interface transition layer and the semiconductor epitaxial stack layer; the metal layer covering a portion of a surface of the interface transition layer and electrically connected to the semiconductor epitaxial stack layer.

Abstract: A light-emitting device includes a substrate, a semiconductor structure, and an insulating reflective layer. The substrate has an upper surface and a lower surface. The semiconductor structure is disposed on the upper surface of the substrate. A projection of the semiconductor structure on the upper surface of the substrate has an outer periphery spaced apart a distance from an outer periphery of the upper surface of the substrate. The insulating reflective layer covers at least a part of the semiconductor structure and has an extending portion extending outwardly from the semiconductor structure and covering a part of the upper surface of the substrate. A peripheral end of the extending portion of the insulating reflective layer has an inclined lateral surface, and an included angle defined between the inclined lateral surface and the upper surface of the substrate is not less than 60°.

Abstract: A light-emitting diode (LED) includes a substrate, an epitaxial structure, and first and second electrodes. The substrate has a surface with upper and lower edges, and two opposing side edges. The epitaxial structure is disposed on the surface. The first and second electrodes are disposed on the epitaxial structure. The second electrode includes a main portion and two extension portions. A projection of each of the extension portions on the surface extends in an extension direction away from the lower edge toward a corresponding one of the side edges in such a manner that an included angle between an central axis perpendicular to the bottom edge and a tangent line of any point on the projection of the extension portions on the surface is not greater than 90° and increases along the extension direction.