Abstract: An I-V measurement method is provided for a solar cell having a collecting electrode on the first surface side of a single-crystalline silicon substrate of a first conductivity type and having a transparent electrode on the outermost surface on the second surface side of the single-crystalline silicon substrate of the first conductivity-type. An electric current is supplied to the solar cell in a state in which flexible metal foil and the transparent electrode are brought into detachable contact with each other such that the flexible metal foil follows undulations of the single-crystalline silicon substrate of a first conductivity type, and the first surface is set as a light-receiving surface. It is preferable that at least on a portion that is in contact with the transparent electrode, the metal foil is formed of at least one selected from the group consisting of Sn, Ag, Ni, In, and Cu.

Abstract: A solar cell includes a rectangular-shaped semiconductor substrate having a first principal surface and a second principal surface, and a metal electrode. The second principal surface includes a plurality of band-shaped first conductivity-type regions that comprise a first conductivity-type semiconductor layer and a plurality of band-shaped second conductivity-type regions that comprise a second conductivity-type semiconductor layer. The metal electrode may be disposed on the second principal surface, and no metal electrode may be provided on the first principal surface. The second conductivity-type semiconductor layer may have a conductivity-type different from that of the first conductivity-type semiconductor layer. The semiconductor substrate may include a first direction end portion region at both end portions of the semiconductor substrate in a first direction, and a first direction central region is present between the two first direction end portion regions.

Abstract: A solar cell includes a semiconductor substrate, a first conductive layer, a second conductive layer, a first electrode, a second electrode, and an island-shaped conductive layer. The first conductive layer and the second conductive layer are disposed on one principal surface of the semiconductor substrate. The first electrode is disposed on the first conductive layer and the second electrode is disposed on the second conductive layer. The first electrode and the second electrode are electrically separated, and the island-shaped conductive layer is disposed between the first electrode and the second electrode.

Abstract: A solar cell includes a conductive crystalline silicon substrate, a first conductive silicon layer, a second conductive silicon layer, a first intrinsic silicon layer, and a second intrinsic silicon layer. The first conductive silicon layer and the second conductive silicon layer are disposed on one principal surface of the conductive crystalline silicon substrate and are electrically insulated from each other. The second conductive silicon layer includes a first portion and a second portion, where the first portion is separated from the conductive crystalline silicon substrate by the first intrinsic silicon layer and the first conductive silicon layer, and where the second portion is separated from the conductive crystalline silicon substrate by the second intrinsic silicon layer. The first intrinsic silicon layer has a greater thickness than the second intrinsic silicon layer.

Abstract: A photoelectric conversion device includes, on one principal surface of a semiconductor substrate, a first conductivity-type region, a second conductivity-type region, and a boundary region which is in contact with each of the first conductivity-type region and the second conductivity-type region to separate these two regions. A first conductivity-type semiconductor layer is disposed over the entire first conductivity-type region and extending over the boundary region. A second conductivity-type semiconductor layer is disposed over the entire second conductivity-type region and extending over the boundary region. An insulating layer is disposed over the entire boundary region. A first electrode is disposed over the entire first conductivity-type region and extending over the boundary region, and a second electrode is disposed over the second conductivity-type region.

Abstract: A solar cell module includes a first solar cell including, in the following order, a single-crystalline silicon substrate, a conductive silicon layer, and a back side transparent electrode layer, where the conductive silicon layer and the back side transparent electrode layer are disposed on a back side of the single-crystalline silicon substrate; an encapsulant; and a flexible metal foil disposed between the back side transparent electrode layer and the encapsulant. The flexible metal foil is in contact with the back side transparent electrode layer in a non-bonded state. The encapsulant encapsulates the first solar cell and maintains a contact state between the flexible metal foil and the back side transparent electrode layer.

Abstract: A crystalline silicon solar cell module includes a crystalline silicon solar cell and an interconnector. The interconnector is electrically connected to the crystalline silicon solar cell. The crystalline silicon solar cell includes a photoelectric conversion section that has a first surface and a second surface opposite to the first surface. The crystalline silicon solar cell also includes a plurality of first finger electrodes arranged side by side on the first surface of the photoelectric conversion section. The crystalline silicon solar cell further includes a first insulating layer over the first surface of the photoelectric conversion section and the first finger electrodes. The interconnector extends across the plurality of first finger electrodes and electrically connects the first finger electrodes. The first insulating layer has an opening through which the first finger electrodes and the interconnector are electrically connected.

Abstract: The solar cell includes an n-type semiconductor layer and a p-type semiconductor layer on a first principal surface of a crystalline silicon substrate. The n-type semiconductor layer is provided so as to extend over a part on a p-type semiconductor layer-formed region provided with the p-type semiconductor layer, and a p-type semiconductor layer non-formed-region where the p-type semiconductor layer is not provided. In a region where the n-type semiconductor layer is provided on the p-type semiconductor layer, a protecting layer is between the p-type semiconductor layer and the n-type semiconductor layer. The protecting layer includes: an underlying protecting layer that is in contact with the p-type semiconductor layer; and an insulating layer that is on the underlying protecting layer. The underlying protecting layer includes an intrinsic silicon-based layer or an n-type silicon-based layer.

Abstract: A solar cell includes: first conductivity-type layers and second conductivity-type layers each provided on a rear surface of a semiconductor substrate; first electrodes provided on the first conductivity-type layers; and second electrodes provided on the second conductivity-type layers. The first electrodes and the second electrodes are spaced apart from each other, and the first electrodes include a plurality of regions isolated from one another by the second electrodes disposed therebetween. Each of the plurality of regions of the first electrodes includes a non-mounting electrode section and a wiring-mounting electrode section having a larger electrode height than the non-connection electrode section. In two adjacent first electrode regions, an imaginary line connecting the top of the wiring-mounting electrode section of one of the regions and the top of the wiring-mounting electrode section of the other region does not cross the second electrode disposed between the two regions.

Abstract: The solar cell includes a plurality of light-receiving-side finger electrodes on a light-receiving surface of a photoelectric conversion section having a semiconductor junction. The light-receiving surface of the photoelectric conversion section is covered with a first insulating layer. Each light-receiving-side finger electrodes include: a first metal seed layer provided between the photoelectric conversion section and the first insulating layer; and a first plating metal layer being conduction with the first metal seed layer through openings formed in the first insulating layer. The solar cell includes an isolated plating metal layer pieces contacting neither the light-receiving-side finger electrodes nor the back-side finger electrodes. On the surface of the first insulating layer, an isolated plating metal crowded region is present in a form of a band-shape extending parallel to an extending direction of the light-receiving-side finger electrodes.

Abstract: A solar cell is provided with an electrode layer on a photovoltaic conversion section including a crystalline silicon substrate. Deposition of the electrode layer is performed by a deposit-up method with a substrate being mounted in such a manner that an opening edge portion of a mask plate having an opening is in contact with the substrate. The opening edge portion of the mask plate has a tapered surface at a part that is in contact with first principal surface of the substrate, the tapered surface conforming to a deflection angle at a peripheral end of the substrate. A solar cell having a large effective area can be prepared by suppressing deposition of electrode layer on mask-covered region due to penetration.

Abstract: In the solar cell module, a first solar cell and a second solar cell are stacked together with an electroconductive member interposed therebetween, such that a cleaved surface-side periphery on a light-receiving surface of the first solar cell overlaps a periphery on a back surface of the second solar cell. The first solar cell and the second solar cell each have: photoelectric conversion section including a crystalline silicon substrate; collecting electrode; and back electrode. At a section where the first solar cell and the second solar cell are stacked, the collecting electrode of the first solar cell and the back electrode of the second solar cell are electrically connected to each other by coming into contact with the electroconductive member. An insulating member is provided on a part of the cleaved surface-side periphery on the light-receiving surface of the first solar cell, where the collecting electrode is not provided.

Abstract: An I-V measurement method is provided for a solar cell having a collecting electrode on the first surface side of a single-crystalline silicon substrate of a first conductivity type and having a transparent electrode on the outermost surface on the second surface side of the single-crystalline silicon substrate of the first conductivity-type. An electric current is supplied to the solar cell in a state in which flexible metal foil and the transparent electrode are brought into detachable contact with each other such that the flexible metal foil follows undulations of the single-crystalline silicon substrate of a first conductivity type, and the first surface is set as a light-receiving surface. It is preferable that at least on a portion that is in contact with the transparent electrode, the metal foil is formed of at least one selected from the group consisting of Sn, Ag, Ni, In, and Cu.

Abstract: A photoelectric conversion section of a solar cell has a first electrode layer and a collecting electrode that are formed in this order on a first principal surface, and has a second electrode layer that is formed on a second principal surface. The collecting electrode includes a first electroconductive layer, an insulating layer, and a second electroconductive layer in this order on the first electrode layer. The first and second electroconductive layers are electrically connected via an opening section in the insulating layer. At peripheral edge of the first and second principal surfaces, the photoelectric conversion section has an insulating region excluding the first or second electrode layer. On the side of the principal surface having no insulating region, the first or second electrode layer is formed up to the peripheral end of the relevant principal surface.

Abstract: Provided is a thin film solar cell module including series-connected unit cells, wherein a thin film silicon photoelectric conversion unit and a compound semiconductor-containing photoelectric conversion unit are electrically connected in each unit cell. Each unit cell includes at least a transparent electrode, an amorphous silicon-containing photoelectric conversion unit, an intermediate transparent electrode layer, a photoelectric conversion unit, a compound semiconductor-based photoelectric conversion unit, and a metal electrode in this order from the light incident side. In each of the unit cells, the photoelectric conversion unit and the compound semiconductor-based photoelectric conversion unit are connected in series to form a series-connected component. The series-connected component is connected to a first photoelectric conversion unit in parallel via the transparent electrode and the intermediate transparent electrode layer.

Abstract: In a solar cell, a collecting electrode is provided on a transparent electrode of a photoelectric conversion section having the transparent electrode on the outermost surface on one main surface side. The collecting electrode includes a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section side. Preferably, a self-assembled monolayer is formed on a region on the transparent electrode layer, which is not provided with the first electroconductive layer. A method for manufacturing the solar cell includes: forming a first electroconductive layer on a transparent electrode layer; forming a self-assembled monolayer on a region on the transparent electrode layer, which is not provided with the first electroconductive layer; and bringing the first electroconductive layer and a plating solution into contact with each other to form the second electroconductive layer by a plating method, in this order.

Abstract: In a solar cell, a collecting electrode is provided on a transparent electrode of a photoelectric conversion section having the transparent electrode on the outermost surface on one main surface side. The collecting electrode includes a first electroconductive layer and a second electroconductive layer in this order from the photoelectric conversion section side. Preferably, a self-assembled monolayer is formed on a region on the transparent electrode layer, which is not provided with the first electroconductive layer. A method for manufacturing the solar cell includes: forming a first electroconductive layer on a transparent electrode layer; forming a self-assembled monolayer on a region on the transparent electrode layer, which is not provided with the first electroconductive layer; and bringing the first electroconductive layer and a plating solution into contact with each other to form the second electroconductive layer by a plating method, in this order.

Abstract: Provided is a hetero-junction solar cell with a silicon crystalline substrate of small thickness but exhibiting less warpage, and having a high photoelectric conversion efficiency. The crystalline silicon substrate has a thickness of 50 ?m to 200 ?m, and has a rough structure on the light-incident-side surface thereof. The surface of the transparent conductive layer in the light incidence side has an irregular structure. The top-bottom distance in the irregular structure of the transparent conductive layer in the light-incidence-side is preferably smaller than the top-bottom distance in the rough structure of the crystalline silicon substrate in the-light-incidence side. The distance between tops of the projections in the irregular structure on the surface of the transparent conductive layer in the light incidence side is preferably smaller than the distance between tops of the projections in the rough structure on the surface of the crystalline silicon substrate in the light incidence side.

Abstract: A method for manufacturing a silicon-based thin film solar cell including a crystalline silicon photoelectric conversion unit which contains a p-type layer (4p), a crystalline i-type silicon photoelectric conversion layer (4ic), and an n-type layer (4nc) stacked in this order from a transparent substrate side is provided. In one example, an n-type silicon-based thin film layer (4na) is formed on the crystalline i-type silicon photoelectric conversion layer (4ic), the n-type silicon-based thin film layer (4na) having an n-type silicon alloy layer having a film thickness of 1-12 nm and being in contact with the crystalline i-type silicon photoelectric conversion layer.

Abstract: This invention intends to develop a technique for forming an interlayer with excellent optical characteristics and to provide a photoelectric conversion device having high conversion efficiency. To realize this purpose, a series connection through an intermediate layer is formed in the thin-film photoelectric conversion device of the invention, and the interlayer is a transparent oxide layer in its front surface and n pairs of layers stacked therebehind (n is an integer of 1 or more), wherein each of the pair of layers is a carbon layer and a transparent oxide layer stacked in this order. Film thicknesses of each layer are optimized to improve wavelength selectivity and stress resistance while keeping the series resistance.