Abstract: A lamp assembly is provided, including a light source, a thermal module, a connecting member, and an adapter electrically connected to the light source. The thermal module includes a first thermal member and a second thermal member. The first and second thermal members respectively have a plurality of first and second fins which are arranged in a staggered manner. The second thermal member forms a plurality of through holes for heat dissipation. The light source is disposed on the second thermal member, and the connecting member connects the thermal module with the adapter.

Abstract: A semiconductor device and its method of manufacture are provided. Embodiments include forming a first doped region and a second doped region. The first and second doped regions may form a double diffused drain structure as in an HVMOS transistor. A gate-side boundary of the first doped region underlies part of the gate electrode. The second doped region is formed within the first doped region adjacent the gate electrode. A gate-side boundary of the second doped region is separated from a closest edge of a gate electrode spacer by a first distance. An isolation region-side boundary of the second doped region is separated from a closest edge of a nearest isolation region by a second distance.

Abstract: An artificial knee joint includes a joint support having upper and lower ends jointed to outside links and an upper link respectively; a brake block having upper and lower jointing holes respectively jointing a lower end of the upper link and a connector, and having an upper portion forming a positioning slot; a hydraulic cylinder arranged inside the brake block and having an upper end coupled to the joint support; a connector having a lower portion connected to a shank and an upper end portion through which a positioning axle extends; and outside links having an upper end jointed to an upper jointing hole of the joint support and a lower end jointed to a jointing hole of the connector. A cylinder barrel, a piston, a resilient element, and an adjusting bolt are arranged inside the connector and the piston is set against a lower end of the brake block.

Abstract: An encapsulated material composition is presented, which contains a compound of Chemical Formula I and a compound of Chemical Formula II, and has high refractive index due to the cycloalkane structure in the compound of Chemical Formula I and the compound of Chemical Formula II. Therefore, when the encapsulated material composition is applied in the light emitting diode (LCD) encapsulated structure, the light extraction efficiency of the LED encapsulated structure is effectively enhanced.

Abstract: A semiconductor device. The semiconductor device comprises an isolation structure and two heavily doped regions of a second conductivity type spaced apart from each other by the isolation structure. The isolation structure comprises an isolation region in a semiconductor substrate and a heavily doped region of the first conductivity type. The isolation region has an opening and the heavily doped region of the first conductivity type is substantially surrounded by the opening of the isolation region.

Abstract: A loop type heat dissipating apparatus with a sprayer for transferring heat between a heat source and a heat sink includes an evaporator, a condenser, and a working fluid. The evaporator contacts the heat source and includes a first chamber, a second chamber, and a sprayer disposed between therebetween. The condenser contacts the heat sink and includes a third chamber communicating with the second chamber and a wick structure disposed on one side of the third chamber. The working fluid fills the loop type heat dissipating apparatus and is turned into microdroplets via a sprayer. The sprayer impinges the microdroplets into the second chamber where the microdroplets are then evaporated by the heat source before proceeding to the third chamber for condensation, liquefaction and adhering to the wick structure. Eventually, the working fluid flows back to the first chamber under a pumping force actuated by the sprayer and completes the cycle.

Abstract: An artificial knee joint includes a joint support having upper and lower ends jointed to outside links and an upper link respectively; a brake block having upper and lower jointing holes respectively jointing a lower end of the upper link and a connector, and having an upper portion forming a positioning slot; a hydraulic cylinder arranged inside the brake block and having an upper end coupled to the joint support; a connector having a lower portion connected to a shank and an upper end portion through which a positioning axle extends; and outside links having an upper end jointed to an upper jointing hole of the joint support and a lower end jointed to a jointing hole of the connector. A cylinder barrel, a piston, a resilient element, and an adjusting bolt are arranged inside the connector and the piston is et against a lower end of the brake block.

Abstract: The present invention discloses a semiconductor structure. A buried layer of a first polarity type is constructed on a semiconductor substrate. A first epitaxial layer of a second polarity type is formed on the buried layer. A second epitaxial layer of the second polarity type is formed on the buried layer. An isolation structure of the first polarity type is formed between the first and second epitaxial layers on the buried layer. A first well of the second polarity type is formed on the first epitaxial layer. A second well of the second polarity type is formed on the second epitaxial layer. A third well of the first polarity type is formed between the first and second wells, on the isolation structure. The isolation structure interfaces with the buried layer and the third well, thereby substantially blocking a leakage current path between the first and the second wells.

Abstract: A constant current source device with over current and over voltage protection function can be directly applied to AC power and DC power, and a method for manufacturing the constant current source device is also disclosed. The device includes a silicon substrate (1), an oxide layer (6) formed in front of the silicon substrate (1), a drain metal (2), a source metal (3) and a gate metal (4) located in front of the oxide layer (6), a P+ guard ring (50), an N+ drain region (52) and an N+ source region (53) implanted in the silicon substrate (1), a P+ substrate region (51) located in the N+ source region (53), and an N? channel region (54) connecting the N+ drain region (52) with the N+ source region (53). The drain metal (2) and the source metal (3) are separately connected with the N+ drain region (52), the N+ source region (53) and the P+ substrate region (51). The source metal (3) and the gate metal (4) are electrically connected through a connection metal (7).

Abstract: The present invention discloses a high power LED lamp circuit with a fan provides advantages such as simple structure, high efficiency, low power consumption, energy saving, and longer lifetime. The LED lamp circuit comprises a rectifying-filtering circuit (1), an LED load (3), an output terminal (A) and a grounding terminal (G) for providing a DC power generated by passing an AC power through the rectifying-filtering circuit (1), the high power LED lamp circuit with a fan further comprises a constant current source (4), a fan driving circuit (6); the lamp circuit is formed by cascading the LED load (3), the constant current source (4) between the output terminal (A) and the grounding terminal (G), the LED lamp circuit is widely applicable in various kinds of LED lamps.

Abstract: A thermoelectric device is provided. The thermoelectric device includes a P-type thermoelectric component, an N-type thermoelectric component, and an electrically conductive layer. Each of the P-type thermoelectric component and the N-type thermoelectric component includes a substrate and a nanowire structure. The conductive layer connects the P-type thermoelectric component set with the N-type thermoelectric component set. The thermoelectric device is adapted for recycling heat generated by the heat source, and for effectively converting the heat into electrical energy.

Abstract: The high voltage integrated circuit comprises a P substrate. An N well barrier is disposed in the substrate. Separated P diffusion regions forming P wells are disposed in the substrate for serving as the isolation structures. The low voltage control circuit is located outside the N well barrier. A floating circuit is located inside the N well barrier. In order to develop a high voltage junction barrier in between the floating circuit and the substrate, the maximum space of devices of the floating circuit is restricted.

Abstract: A micro-spray cooling system for a plurality of heat sources includes an evaporator contacting the heat sources and comprising a plurality of actuators corresponding to the heat sources, a condenser connected to the evaporator, and at least one driving circuit connected to the actuators to drive some or all of the actuators sequentially according to a predetermined timing to cool the heat sources. The refrigerant in the evaporator is sprayed by the actuators to thermally contact the heat sources, evaporated by heat from the heat sources, condensed in the condenser and re-enters the evaporator.

Abstract: A riveter includes a casing having a passageway therein. A shaft is received in the passageway of the casing for a reciprocation motion. Jaws are received in the passageway of the casing to be moved along with the shaft. A spindle is inserted into a rear end the casing to be spun for driving the shaft for the reciprocation motion. The casing is provided with slots on a sidewall of the passageway, and the shaft is provided with recesses aligned with the slots respectively. In each pair of the slot and the recess, at least a ball is received to reduce a friction of the reciprocation motion of the shaft. The riveter of the present further provides an ejector behind the jaws. When a blind rivet is inserted, it will compress the ejector, and the ejector will eject the residual rivet out.

Abstract: The present invention proposes a voltage-clipping device utilizing a pinch-off mechanism formed by two depletion boundaries. A clipping voltage of the voltage-clipping device can be adjusted in response to a gate voltage; a gap of a quasi-linked well; and a doping concentration and a depth of the quasi-linked well and a well with complementary doping polarity to the quasi-linked well. The voltage-clipping device can be integrated within a semiconductor device as a voltage stepping down device in a tiny size, compared to traditional transformers.

Abstract: A high voltage device with constant current source and the manufacturing method thereof. The device includes a P type silicon substrate (1), an oxide layer (6), a drain metal (2), a source metal (3), a gate metal (4), a P+substrate contact region (51), a N+drain region (52), an N+source region (53), an N?channel region (54) connecting the said N+drain region (52) and N+source region (53), and an N?drain region (92) enveloping the said N+drain region (52); the drain metal (2) fills drain through hole (82) and connects the N+drain region (52); the source metal (3) fills source through hole (83), and connects the N+source region (53) and P+substrate contact region (51); the source metal (3) and gate metal (4) are electrically connected by connecting metal (34). The manufacturing method includes steps of forming N+drain region, N+source region, N?drain region, P+substrate contact region, N?drain region and metal layer.

Abstract: A switching circuit for power converters is presented. It includes a voltage-clipping device, a resistive device, a first transistor and a second transistor. The voltage-clipping device is coupled to an input voltage. The first transistor is connected in series with the voltage-clipping device for switching the input voltage. The second transistor is coupled to control the first transistor and the voltage-clipping device in response to a control signal. The resistive device provides a bias voltage to turn on the voltage-clipping device and the first transistor when the second transistor is turned off. Once the second transistor is turned on, the first transistor is turned off and the voltage-clipping device is negatively biased. The voltage-clipping device is developed to clamp a maximum voltage for the first transistor.

Abstract: The present invention discloses a constant current source circuit with energy saving and over voltage protection to provide a constant current source circuit with less elements, simple circuitry, energy saving and over voltage protection. The present invention includes a regulating circuit (1), a filtering capacitor (2) and a load (3), and further includes a depletion mode FET (field effect transistor) (4). The present invention can generally be applied to the lamps, wherein the load are high voltage LED (light emitting diode) elements or a lamp composed of several LED elements serial connected or serial-parallel connected. This invention can also be applied to the load that is an electronic circuit with high working voltage. This invention can also be applied to the load that is a DC motor with high working voltage. This invention can also be applied to the load that is an electrical thermal load with high resistivity.

Abstract: An anti-shock artificial knee joint includes a pivot stop block forming a first pivot hole rotatably receiving therein a first pivot for bending the knee joint and a second pivot hole rotatably receiving a second pivot. A gap extending from the first pivot hole so that when the pivot stop block is subjected to an external force induced in the process of walking, the gap is reduced to secure the first pivot from rotation whereby the pivot stop block rotates about the second pivot to cause the pivot stop block to engage spring-biased pistons to thereby absorb the external force or the impact caused by the external force. The spring-biased pistons are provided with set screws to adjust the cushioning effect provided by the spring-biased pistons.

Abstract: The present invention discloses a constant current source device with over current and over voltage protection function that can be directly applied to AC power and DC power, and a method for manufacturing the constant current source device is also disclosed. The device includes a silicon substrate (1), an oxide layer (6) formed in front of the silicon substrate (1), a drain metal (2), a source metal (3) and a gate metal (4) located in front of the oxide layer (6), a P+ guard ring (50), an N+ drain region (52) and an N+ source region (53) implanted in the silicon substrate (1), a P+ substrate region (51) located in the N+ source region (53), and an N? channel region (54) connecting the N+ drain region (52) with the N+ source region (53). The drain metal (2), and source metal (3) are separately connected with the N+ drain region (52), the N+ source region (53) and the P+ substrate region (51). The source metal (3) and the gate metal (4) are electrically connected through a connection metal (7).