Abstract: A package structure includes a bonding substrate, an integrated circuit, and a heat sink metal. The integrated circuit includes an active region facing the bonding substrate. The heat sink metal is located between the bonding substrate and the active region of the integrated circuit. The heat sink metal is electrically insulated with the integrated circuit.

Abstract: A semiconductor device includes a first contact layer, a second contact layer, an active layer, a photonic crystal layer, a passivation layer, a first electrode and a second electrode. The first contact layer has a first surface and a second surface opposite to each other. Microstructures are located on the second surface. The second contact layer is located below the first surface. The active layer is located between the first contact layer and the second contact layer. The photonic crystal layer is located between the active layer and the second contact layer. The passivation layer is located on the second contact layer. The first electrode is located on the passivation layer and is electrically connected the first surface of the first contact layer. The second electrode is located on the passivation layer and is electrically connected to the second contact layer.

Abstract: The present disclosure provides a bolometer including a substrate, a reflecting mirror on the substrate, and a temperature sensing unit above the reflecting mirror. The temperature sensing unit includes a first insulating layer, a thermistor on the first insulating layer, a second insulating layer on the thermistor, an electrode layer in the second insulating layer and right above the thermistor, and a metal meta-surface in the second insulating layer and right above the electrode layer. The electrode layer includes a plurality of electrodes separated from each other. A projection region of the metal meta-surface on the thermistor is equal to or larger than the thermistor.

Abstract: A nanocrystal array, a laser device, and a display device are provided. The nanocrystal array includes a plurality of nanorods arranged in an array. Each nanorod includes a nanorod buffer layer, a first type semiconductor layer, a tunnel junction layer, a second type semiconductor layer, a multi-quantum well, and another first type semiconductor layer successively stacked on each other. The laser device and the display device include the nanocrystal array. The present disclosure may reduce the laser threshold and increase output power, and further improve the resolution and image quality of the display device.

Abstract: A photonic crystal surface-emitting laser device includes a substrate, a light emitting layer located on a surface of the substrate, a photonic crystal layer located on a side of the light emitting layer facing away from the substrate, and a metasurface located on a side of the substrate facing away from the photonic crystal layer. The light emitting layer is configured to generate photons. The photons incident into the photonic crystal layer generate laser light through a vibration on Bragg diffraction. The metasurface includes a base and a plurality of pillars arranged on a surface of the base at intervals, at least two of the plurality of pillars have different shapes and/or different sizes. The metasurface is configured to receiving the laser light, diffracting the laser light and then emitting the laser light. An optical system having the photonic crystal surface-emitting laser device is also provided.

Abstract: A photonic crystal surface-emitting laser includes a light emitting module and a driving module. The light emitting module includes a photonic crystal layer, an active light emitting layer on a side of the photonic crystal layer, a first electrode on a side of the active light emitting layer facing away from the photonic crystal layer, and a second electrode partially on the side of the active light emitting layer facing away from the photonic crystal layer. The driving module makes electrical contact with surfaces of the first electrode and the second electrode facing away from the photonic crystal layer. The driving module outputs driving signals to the first electrode and the second electrode to drive the active light emitting layer to generate photons. The photons are incident into the photonic crystal layer to generate a laser light through oscillation on Bragg diffraction. An optical system is also disclosed.

Abstract: A photonic crystal surface-emitting laser includes a substrate, an n-type cladding layer, an active layer, a photonic crystal structure, a p-type cladding layer, an n-type semiconductor layer and a meta-surface structure. The n-type cladding layer is disposed over the substrate. The active layer is disposed over the n-type cladding layer. The photonic crystal structure is disposed over the active layer. The p-type cladding layer is disposed over the photonic crystal structure. The n-type semiconductor layer is disposed over the p-type cladding layer. The meta-surface structure disposed on a surface of the n-type semiconductor layer away from the p-type cladding layer.

Abstract: A photonic crystal surface-emitting laser includes a substrate, an n-type cladding layer, an active layer, an index matching layer and a photonic crystal structure. The n-type cladding layer is disposed over the substrate. The active layer is disposed over the n-type cladding layer. The index matching layer is disposed over the n-type cladding layer and is arranged around the active layer. The index matching layer is electrically insulating, and an effective refractive index of the index matching layer is substantially identical to an effective refractive index of the active layer. The photonic crystal structure is disposed over the active layer and the index matching layer.

Abstract: A photonic crystal surface emitting laser device including at least one photonic crystal surface emitting laser unit is provided. The photonic crystal surface emitting laser unit includes a light-emitting layer, a photonic crystal layer, a doped semiconductor layer, and a diffractive grating. The light-emitting layer is configured to emit a light beam. The photonic crystal layer is disposed on one side of the light-emitting layer. The doped layer is disposed on another side of the light-emitting layer. The diffractive grating is disposed on the photonic crystal layer or the doped semiconductor layer.

Abstract: A two-dimensional photonic crystal laser with transparent conductive cladding layer is provided. The two-dimensional photonic crystal region through the etching process is composed by multiple periodic air-holes with proper duty cycle. Then, the transparent conductive oxide layer is directly deposited on the top of the entire two-dimensional photonic crystal structure to cover the entire two-dimensional photonic crystal structure in order to form a current spreading layer. The configuration and the process condition of transparent conductive oxide layer are optimized to provide uniform current spreading path and the transparency. In addition to simplifying the whole fabrication process, the optical confinement is improved and the maximum gain to optical feedback is obtained. Overall, low threshold, small divergence angle and high quality laser output is achieved to satisfy the requirements for next-generation light sources.

Abstract: A two-dimensional photonic crystal laser with transparent conductive cladding layer is provided. The two-dimensional photonic crystal region through the etching process is composed by multiple periodic air-holes with proper duty cycle. Then, the transparent conductive oxide layer is directly deposited on the top of the entire two-dimensional photonic crystal structure to cover the entire two-dimensional photonic crystal structure in order to form a current spreading layer. The configuration and the process condition of transparent conductive oxide layer are optimized to provide uniform current spreading path and the transparency. In addition to simplifying the whole fabrication process, the optical confinement is improved and the maximum gain to optical feedback is obtained. Overall, low threshold, small divergence angle and high quality laser output is achieved to satisfy the requirements for next-generation light sources.