Abstract: A semiconductor device includes a first contact layer, a second contact layer, an active layer, a photonic crystal layer, a passivation layer, a first electrode and a second electrode. The first contact layer has a first surface and a second surface opposite to each other. Microstructures are located on the second surface. The second contact layer is located below the first surface. The active layer is located between the first contact layer and the second contact layer. The photonic crystal layer is located between the active layer and the second contact layer. The passivation layer is located on the second contact layer. The first electrode is located on the passivation layer and is electrically connected the first surface of the first contact layer. The second electrode is located on the passivation layer and is electrically connected to the second contact layer.

Abstract: A system having an electrostatic discharge protection structure and a method for manufacturing the structure are provided. The structure comprises a conducting layer, a material layer and a bridging layer wherein the conducting layer is divided into a first conducting portion and a second conducting portion to form a gap therebetween. The material layer is disposed onto the conducting layer, forming a first via hole to expose a part of the first conducting portion and a second via hole to expose a part of the second conducting portion. Finally, the bridging layer disposed onto the material layer electrically connects the first conducting portion to the second conducting portion within the first and second via holes, whereby the electrostatic produced during the manufacturing process would be prevented from damaging the driver circuits.

Abstract: The invention discloses an LTPS LCD comprising a plurality of NMOS elements and PMOS elements on a substrate. Each element comprises a SiNx layer underlying or capping a gate electrode. The SiNx layer features an appropriate length extending from the bottom edge of the gate electrode. The SiNx layer can be replaced with a SiOxNy layer.

Abstract: A system having an electrostatic discharge protection structure and a method for manufacturing the structure are provided. The structure comprises a conducting layer, a material layer and a bridging layer wherein the conducting layer is divided into a first conducting portion and a second conducting portion to form a gap therebetween. The material layer is disposed onto the conducting layer, forming a first via hole to expose a part of the first conducting portion and a second via hole to expose a part of the second conducting portion. Finally, the bridging layer disposed onto the material layer electrically connects the first conducting portion to the second conducting portion within the first and second via holes, whereby the electrostatic produced during the manufacturing process would be prevented from damaging the driver circuits.

Abstract: The invention provides a method for manufacturing systems for displaying images. A representative system incorporates electroluminescent devices, comprising the following steps. A substrate having an active region and a pad region is provided. A thin film transistor is formed on the active region and a pad electrode is formed on the pad region, wherein the thin film transistor comprise a source electrode, a gate electrode, a drain electrode, and a gate insulator. A protective layer is formed on the active region and pad region. A planarization layer is formed on the active region and pad region, after forming color filter patterns on the protective layer on the active region. A first contact hole is formed to pass through the planarization layer of the active region, exposing the surface of the protective layer directly on the drain electrode.