Abstract: A semiconductor device including a first oxide definition (OD) strip doped by a first-type dopant in a first doping region defining an active region of a first Metal-Oxide Semiconductor (MOS); a second OD strip doped by a second-type dopant in a second doping region and a third doping region, the second doping region defining an active region of a second MOS and the third doping region defining a body terminal of the first MOS, wherein the second OD is parallel to the first OD strip; and a first dummy OD strip, wherein a boundary between the second doping region and the third doping region is formed over the first dummy OD strip; wherein the first-type dopant is different from the second-type dopant.

Abstract: A boxcutter includes a handle, a blade and a holder. The handle includes a bump on an internal face. The blade is insertable in the handle. The holder is moveable in the handle between a front position to extend a front section of the blade from the handle and a rear position to insert the blade entirely in the handle. The holder includes a carrier and an elastic leaf. The carrier includes a flat space for receiving a rear section of the blade. The elastic leaf includes a rear section connected to the carrier and a front section formed with a lever and a latch. The lever extends over the carrier and the latch extends in the cutout. When the holder is in the front position, the lever abuts against the bump to deform the elastic leaf to move the latch from the cutout.

Abstract: A method includes forming a gate electrode on a semiconductor region, recessing the gate electrode to generate a recess, performing a first deposition process to form a first metallic layer on the gate electrode and in the recess, wherein the first deposition process is performed using a first precursor, and performing a second deposition process to form a second metallic layer on the first metallic layer using a second precursor different from the first precursor. The first metallic layer and the second metallic layer comprise a same metal. The method further incudes forming a dielectric hard mask over the second metallic layer, and forming a gate contact plug penetrating through the dielectric hard mask. The gate contact plug contacts a top surface of the second metallic layer.

Abstract: A semiconductor package includes a first die, a second die, and a hybrid-type adhesive. The second die is stacked on the first die through the hybrid-type adhesive. The hybrid-type adhesive includes a conductive adhesive and a non-conductive adhesive. The conductive adhesive is disposed between the non-conductive adhesive and the first die. The non-conductive adhesive is disposed between the conductive adhesive and the second die.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: A hacksaw frame includes a beam, a front handle, a rear handle, and a blade. The beam includes a front rectilinear section, a rear rectilinear section, and an intermediate rectilinear section raised from the front and rear rectilinear sections so that there is a distance between a lower edge of the intermediate rectilinear section and a base line of the beam that passes through lower edges of the front and rear rectilinear sections. The front handle is connected to the front rectilinear section of the beam. The rear handle is connected to the rear rectilinear section of the beam. The blade includes a front section connected to the front handle and a rear section connected to the rear handle. The intermediate rectilinear section of the beam increases a distance between a lower edge of the beam and an upper edge of the blade.

Abstract: A sharing device and a proximal access method thereof are provided. Via the first communication unit with a smaller effective communication range, the portable electronic device can obtain control of the sharing device at a closer location and obtain the connection information of the second communication unit. Later, through the second communication unit with a larger effective communication range, the portable electronic device can conveniently control the sharing device. In this way, it is possible to avoid mishandling other sharing devices in the same space when initially gaining control, and to allow users to extend the distance of use after gaining control, which has both access security and convenience.

Abstract: A stationary device with an encrypted file access function and access method thereof are provided. The portable electronic device sends an access request of an electronic confidential file to the stationary device through a proximal connection. The stationary device sends an access request to the cloud server through a remote connection. Then the cloud server gives the corresponding access commands and verification commands to the portable electronic device and the stationary device. After the stationary device verifies that the access command matches the verification command through the proximal connection, the portable electronic device is allowed to access the electronic confidential file. The portable electronic device and the stationary device constantly check whether they are still within a certain distance, so as to restrict the user from accessing the electronic confidential file only in specific areas. Thus, the business secrets and national defense secrets are effectively protected.

Abstract: A control system and a control method of sharing device with liftin function are provided. The portable electronic device sends a request to the cloud server. The cloud server matches the sharing device that meets the request to the portable electronic device so that the portable electronic device have a control right over the paired sharing device. Then the portable electronic device controls lifting or other functions of the sharing device within a specific time, so as to facilitate the management of multiple sharing devices in different places.

Abstract: A method includes forming a gate electrode on a semiconductor region, recessing the gate electrode to generate a recess, performing a first deposition process to form a first metallic layer on the gate electrode and in the recess, wherein the first deposition process is performed using a first precursor, and performing a second deposition process to form a second metallic layer on the first metallic layer using a second precursor different from the first precursor. The first metallic layer and the second metallic layer comprise a same metal. The method further incudes forming a dielectric hard mask over the second metallic layer, and forming a gate contact plug penetrating through the dielectric hard mask. The gate contact plug contacts a top surface of the second metallic layer.

Abstract: A barbecue grill includes a barrel and a supporting unit. The barrel includes multiple panels and two lugs. The panels are pivotally connected to one another so that the barrel is switchable between an extended position and a collapsed position. The lugs are formed on one of the panels. The supporting unit includes a frame and multiple loops. The frame includes two lateral sections and two pivots. The lateral sections extend parallel to each other. The pivots extend from the lateral sections, respectively. The pivots are inserted in the lugs when the lateral sections are released. The pivots are disengaged from the lugs when the lateral sections are moved relative to each other. The loops are located on and connected to the lateral sections.

Abstract: A box cutter includes a blade, a handle, a sheath and a restraining element. The handle includes a space for receiving a rear portion of the blade, a chamber in communication with the space, a rear slot in communication with the space, and a front slot in communication with the chamber. The sheath is movable in the chamber and covers a front portion of the blade. The restraining element is movable in the handle between a locking position and an unlocking position. In the locking position, the restraining element abuts against the sheath to prevent the sheath from retreating into the handle to keep on covering the front portion of the blade. In the unlocking position, the restraining element is moved from the sheath to allow the sheath to retreat into the handle to allow the front portion of the blade to extend from the sheath.

Abstract: A method includes forming a gate electrode on a semiconductor region, recessing the gate electrode to generate a recess, performing a first deposition process to form a first metallic layer on the gate electrode and in the recess, wherein the first deposition process is performed using a first precursor, and performing a second deposition process to form a second metallic layer on the first metallic layer using a second precursor different from the first precursor. The first metallic layer and the second metallic layer comprise a same metal. The method further incudes forming a dielectric hard mask over the second metallic layer, and forming a gate contact plug penetrating through the dielectric hard mask. The gate contact plug contacts a top surface of the second metallic layer.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: A box cutter includes a handle, a holder and a linkage. The handle includes a front slot in communication with a space. The holder is formed with a boss and operable for holding a portion of a blade. The linkage includes a sliding element formed with a pusher. The linkage is operable to move the sliding element toward the holder to abut the pusher against the boss to move the holder toward the front slot to extend a pointed end of the blade from the space through the front slot when the boss is located between the front slot and the pusher. The pusher is biased from the boss to allow the holder to return to its original position when the pusher is located between the front slot and the boss.

Abstract: A method includes forming a gate electrode on a semiconductor region, recessing the gate electrode to generate a recess, performing a first deposition process to form a first metallic layer on the gate electrode and in the recess, wherein the first deposition process is performed using a first precursor, and performing a second deposition process to form a second metallic layer on the first metallic layer using a second precursor different from the first precursor. The first metallic layer and the second metallic layer comprise a same metal. The method further incudes forming a dielectric hard mask over the second metallic layer, and forming a gate contact plug penetrating through the dielectric hard mask. The gate contact plug contacts a top surface of the second metallic layer.

Abstract: A box cutter includes a handle, a holder and a linkage. The handle includes a front slot in communication with a space. The holder is formed with a boss and operable for holding a portion of a blade. The linkage includes a sliding element formed with a pusher. The linkage is operable to move the sliding element toward the holder to abut the pusher against the boss to move the holder toward the front slot to extend a pointed end of the blade from the space through the front slot when the boss is located between the front slot and the pusher. The pusher is biased from the boss to allow the holder to return to its original position when the pusher is located between the front slot and the boss.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.