Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.

Abstract: A semiconductor device comprises a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and an active layer located between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure has a first conductivity type, and includes a plurality of first layers and a plurality of second layers alternately stacked. The second semiconductor structure has a second conductivity type opposite to the first conductivity type. The plurality of first layers and the plurality of second layers include indium and phosphorus, and the plurality of first layers and the plurality of second layers respectively have a first indium atomic percentage and a second indium atomic percentage. The second indium atomic percentage is different from the first indium atomic percentage.

Abstract: A stirring device is adapted to be used for a water storage system. The stirring device includes a tube unit and a stirring unit. The tube unit includes a rigid tube member, and a flexible tube member adapted for interconnecting the rigid tube member and an inlet of the water storage system. The stirring unit includes a center rod extending rotatably into the rigid tube member along an longitudinal direction of the rigid tube member, a support subunit positioning the center rod within the rigid tube member, a driver fan subunit mounted to the center rod and adapted to be driven by water for actuating rotation of the center rod, and a stirring member mounted co-rotatably to the center rod and adapted for stirring sediments in the water.

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

Abstract: A wind turbine includes an axle unit having a tubular hub which is rotatably sleeved around an inner tube, a blade unit rotatable by a wind power in an operational direction and including a plurality of blades which are connected with the hub, and each of which has a wind hole formed at a root end thereof adjacent to the hub axis, and a flow deflection unit including a deflection plate which is disposed corresponding with the wind holes and connected with the inner tube. The deflection plate extends and is curved along the operational direction to collect and deflect wind flow toward the blades so as to generate a larger torque of the blades to enhance the rotating efficiency.

Abstract: A wave electricity generator system includes a water craft, a reinforcement beam mounted to a bottom of the watercraft, a power generating unit and a leverage assembly. The leverage assembly includes a connection unit disposed on the watercraft, and a lever 62 connected to the power generating unit and the connection unit. The connection unit includes a rope retaining seat, a rope and a protective pad. The rope retaining seat is disposed above the watercraft and connected to the lever. The rope is disposed around the watercraft, threads through the reinforcement beam, and is connected to the rope retaining seat. The protective pad is disposed between the reinforcement beam and the rope.

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

Abstract: A vane device includes a rotary shaft and a plurality of vane units angularly spaced apart from each other relative to the rotary shaft. Each of the vane units includes a grid frame that has grid spaces, and a plurality of vanes respectively disposed adjacent to the grid spaces. Each vane is swingable between a cover position and an open position. The size of the vanes decreases along a radial direction from a vicinity of the rotary shaft to a distance away from the rotary shaft.

Abstract: A wave electricity generator system includes a water craft, a reinforcement beam mounted to a bottom of the watercraft, a power generating unit and a leverage assembly. The leverage assembly includes a connection unit disposed on the watercraft, and a lever 62 connected to the power generating unit and the connection unit. The connection unit includes a rope retaining seat, a rope and a protective pad. The rope retaining seat is disposed above the watercraft and connected to the lever. The rope is disposed around the watercraft, threads through the reinforcement beam, and is connected to the rope retaining seat. The protective pad is disposed between the reinforcement beam and the rope.

Abstract: A vane device includes a rotary shaft and vanes. A shroud unit includes a bottom plate section and a blocking plate section. The bottom plate section is disposed below the rotary shaft. The blocking plate section has a bottom end at the rear of the bottom plate section, and a top end disposed at the rear of the vanes in a spaced apart manner. A distance from the top end to the rotary shaft is 1.4 to 3 times the radial length of each vane. The blocking plate section prevents the vanes from rotating in a second direction opposite to a first direction when the vanes rotate in the first direction at a level below the top end of the blocking plate section.

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

Abstract: A fluid driven turbine apparatus includes a hollow body and rib plates annularly disposed in the hollow body. A vane module is disposed in the hollow body and co-axially connected to a shaft extending axially through the hollow body. The rib plates surround the vane module and are spaced apart from the vane module by an annular gap. The annular gap has a width gradually enlarged in a top-to-bottom direction. When fluid flows into the vane module and is diverted sideward to the annular gap, large sand grains carried by fluid may pass through an enlarged lower portion of the annular gap without getting stuck therein and abrading the rib plates and the vane module.

Abstract: A wind turbine blade device includes a rotating unit including a blade module concentrically connected to a rotating shaft thereof and having a plurality of radially curved channels each having inlet and outlet ends. The inlet and outlet ends of the radially curved channels are configured to respectively permit flow of the flow body into and out thereof. An outer tube includes a tube body surrounding the rotating unit, and a plurality of rib plates provided in the tube body. The outlet end of each radially curved channel corresponds to one of the rib plates, and each radially curved channel forms an included angle with a corresponding rib plate such that the flow body flowing out of the outlet end can impact upon the corresponding rib plate.

Abstract: A vane device includes vane units, coupling modules around a shaft body, and connection units. Each coupling member has two brackets each of which has an insertion hole. Each connection unit is disposed between the brackets and has a rotary member, and two pin members threadedly inserted into the rotary member and projecting outwardly from the rotary member to extend into the insertion holes. When the rotary member is rotated, the pin members are moved toward each other so that the pin members are released from the insertion holes, or moved away from each other so that the pin members are respectively inserted into the insertion holes and each connection unit detachably connects one of the vane units to one of the coupling modules.

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

Abstract: A semiconductor device includes a substrate having a channel region; a gate stack over the channel region; a seal spacer covering a sidewall of the gate stack, the seal spacer including silicon nitride; a gate spacer covering a sidewall of the seal spacer, the gate spacer including silicon oxide, the gate spacer having a first vertical portion and a first horizontal portion; and a first dielectric layer covering a sidewall of the gate spacer, the first dielectric layer including silicon nitride.

Abstract: A stirring device is adapted to be used for a water storage system. The stirring device includes a tube unit and a stirring unit. The tube unit includes a rigid tube member, and a flexible tube member adapted for interconnecting the rigid tube member and an inlet of the water storage system. The stirring unit includes a center rod extending rotatably into the rigid tube member along an longitudinal direction of the rigid tube member, a support subunit positioning the center rod within the rigid tube member, a driver fan subunit mounted to the center rod and adapted to be driven by water for actuating rotation of the center rod, and a stirring member mounted co-rotatably to the center rod and adapted for stirring sediments in the water.

Abstract: A water wave-type power generating device is mounted on a shore, and includes a hub, a power generating unit, a transmitting track unit surrounding and movable relative to the hub along an endless course to generate a rotational force, a rotation transmitting unit coupled with the transmitting track unit and receiving the rotational force to generate the torque that is transmitted to the power generating unit by a torque transmitting unit, and a plurality of wave heading members disposed on the transmitting track unit and each having a heading surface that is subjected to waves of water in a wave ascending direction so as to actuate the movement of the transmitting track unit.

Abstract: A reservoir dredging assembly includes a dredging tube and at least one dredging device adapted to be installed to at least one secondary reservoir. The at least one dredging device includes a linking tube, an extending tube, a water gate, and a control unit. The linking tube is connected to the dredging tube for water in a primary reservoir, together with sediments deposited therein, to flow through. The extending tube has a top cutlet adapted to be located lower than the maximum water level of the primary reservoir. The water gate is mounted in the linking tube at a position downstream of the extending tube. The control unit is convertible between a first state for closing the water gate and a second state for opening the water gate.