Abstract: An apparatus includes a vacuum chamber, a reflective optical element arranged in the vacuum chamber and configured to reflect an extreme ultra-violet (EUV) light, and a cleaning module positioned in the vacuum chamber. the cleaning module is operable to provide a mitigation gas flowing towards the reflective optical element and provide a hydrogen-containing gas flowing towards the reflective optical element. The mitigation gas mitigates, by chemical reaction, contamination of the reflective optical element.

Abstract: A lithography system includes a first load lock chamber configured to receive a mask, a cleaning module configured to clean the mask, a second load lock chamber configured to receive a wafer, an exposure module configured to expose the wafer to a light source through use of the cleaned mask. A direct path is provided between the first load lock chamber and the exposure module allowing the first load lock chamber to directly couple to the exposure module without through the cleaning module.

Abstract: An apparatus includes a vacuum chamber, a reflective optical element arranged in the vacuum chamber and configured to reflect an extreme ultra-violet (EUV) light, and a cleaning module positioned in the vacuum chamber. the cleaning module is operable to provide a mitigation gas flowing towards the reflective optical element and provide a hydrogen-containing gas flowing towards the reflective optical element. The mitigation gas mitigates, by chemical reaction, contamination of the reflective optical element.

Abstract: A patterning process is performed on a semiconductor wafer coated with a bottom layer, a middle layer and a photoresist layer having a starting thickness. The patterning process includes: performing an exposure step including exposing the semiconductor wafer using a mask that includes a feature which produces an intermediate light exposure in a target area followed by processing that creates openings in the photoresist layer in accordance with the mask and thins the photoresist in the target area due to the intermediate light exposure in the target area leaving thinned photoresist in the target area; performing middle layer etching to form openings in the middle layer aligned with the openings in the photoresist layer, wherein the middle layer etching does not remove the middle layer in the target area due to protection provided by the thinned photoresist; and performing trim etching to trim the middle layer in the target area.

Abstract: A lithography system includes a first load lock chamber configured to receive a mask, a cleaning module configured to clean the mask, a second load lock chamber configured to receive a wafer, an exposure module configured to expose the wafer to a light source through use of the cleaned mask. A direct path is provided between the first load lock chamber and the exposure module allowing the first load lock chamber to directly couple to the exposure module without through the cleaning module.

Abstract: A lithography system includes a load lock chamber comprising an opening configured to receive a mask, an exposure module configured to expose a semiconductor wafer to a light source through use of the mask, and a cleaning module embedded inside the lithography tool, the cleaning module being configured to clean carbon particles from the mask.

Abstract: Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a multi-metal complex including an extreme ultraviolet (EUV) absorption element and a bridging element. By way of example, the EUV absorption element includes a first metal type and the bridging element includes a second metal type. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.

Abstract: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. An inverse mask is provided. A sacrificial layer is deposited over a substrate. A patterned photoresist layer is formed over the sacrificial layer using the inverse mask. The sacrificial layer is then etched through the patterned photoresist layer to form a patterned sacrificial layer. A hard mask layer is deposited over the patterned sacrificial layer. The patterned sacrificial layer is then removed to form a second pattern on the hard mask layer.

Abstract: A lithography system includes a load lock chamber comprising an opening configured to receive a mask, an exposure module configured to expose a semiconductor wafer to a light source through use of the mask, and a cleaning module embedded inside the lithography tool, the cleaning module being configured to clean carbon particles from the mask.

Abstract: Disclosed is an apparatus for lithography patterning. The apparatus includes a substrate stage configured to hold a substrate coated with a deposition enhancement layer (DEL), a radiation source for generating a patterned radiation towards a surface of the DEL, and a supply pipe for flowing an organic gas near the surface of the DEL, wherein elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL.

Abstract: A lithography system includes a load lock chamber comprising an opening configured to receive a mask, an exposure module configured to expose a semiconductor wafer to a light source through use of the mask, and a cleaning module embedded inside the lithography tool, the cleaning module being configured to clean carbon particles from the mask.

Abstract: Disclosed is an apparatus for lithography patterning. The apparatus includes a substrate stage configured to hold a substrate coated with a deposition enhancement layer (DEL), a radiation source for generating a patterned radiation towards a surface of the DEL, and a supply pipe for flowing an organic gas near the surface of the DEL, wherein elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL.

Abstract: Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.

Abstract: Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a multi-metal complex including an extreme ultraviolet (EUV) absorption element and a bridging element. By way of example, the EUV absorption element includes a first metal type and the bridging element includes a second metal type. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.

Abstract: Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.

Abstract: The method includes performing a photolithography process which includes using a photomask to pattern a radiation beam. The photolithography process also includes exposing a target substrate to the patterned radiation beam. During the exposing of the target surface, there is a real-time monitoring for particles incident or approximate the photomask.

Abstract: A lithography system includes a load lock chamber comprising an opening configured to receive a mask, an exposure module configured to expose a semiconductor wafer to a light source through use of the mask, and a cleaning module embedded inside the lithography tool, the cleaning module being configured to clean carbon particles from the mask.

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a radiation-removable-material (RRM) layer over a substrate and removing a first portion of the RRM layer in a first region of the substrate by exposing the first portion of the RRM layer to a radiation beam. A second portion of the RRM layer in a second region of the substrate remains after the removing of the first portion of the RRM layer in the first region. The method also includes forming a selective-forming-layer (SFL) over the second portion of the RRM layer in the second region of the substrate and forming a material layer over the first region of the substrate.

Abstract: The method includes performing a photolithography process which includes using a photomask to pattern a radiation beam. The photolithography process also includes exposing a target substrate to the patterned radiation beam. During the exposing of the target surface, there is a real-time monitoring for particles incident or approximate the photomask.

Abstract: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. An inverse mask is provided. A sacrificial layer is deposited over a substrate. A patterned photoresist layer is formed over the sacrificial layer using the inverse mask. The sacrificial layer is then etched through the patterned photoresist layer to form a patterned sacrificial layer. A hard mask layer is deposited over the patterned sacrificial layer. The patterned sacrificial layer is then removed to form a second pattern on the hard mask layer.