Abstract: An electronic device has a narrow viewing angle state and a wide viewing angle state, and includes a panel and a light source providing a light passing through the panel. In the narrow viewing angle state, the light has a first relative light intensity and a second relative light intensity. The first relative light intensity is the strongest light intensity, the second relative light intensity is 50% of the strongest light intensity, the first relative light intensity corresponds to an angle of 0°, the second relative light intensity corresponds to a half-value angle, and the half-value angle is between ?15° and 15°. In the narrow angle state, a third relative light intensity at each angle between 20° and 60° or each angle between ?20° and ?60° is lower than 20% of the strongest light intensity.

Abstract: A method of manufacturing a semiconductor device includes forming a gate electrode structure over a channel region, wherein the gate electrode structure includes a gate dielectric layer disposed over the first channel region, a gate electrode disposed over the gate dielectric layer, and insulating spacers disposed over opposing sidewalls of the gate electrode, wherein the gate dielectric layer is disposed over opposing sidewalls of the gate electrode. An interlayer dielectric layer is formed over opposing sidewalls of the insulating spacers. The insulating spacers are removed from an upper portion of the opposing sidewalls of the gate electrode to form trenches between the opposing sidewalls of the upper portion of the gate electrode and the interlayer dielectric layer, and the trenches are filled with an insulating material.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: An image sensor structure includes a semiconductor substrate, a plurality of image sensing elements, a reflective element, and a high-k dielectric structure. The image sensing elements are in the semiconductor substrate. The reflective element is in the semiconductor substrate and between the image sensing elements. The high-k dielectric structure is between the reflective element and the image sensing elements.

Abstract: A method of fabricating a semiconductor structure includes the following steps. A semiconductor wafer is provided. A plurality of first surface mount components and a plurality of second surface mount components are bonded onto the semiconductor wafer, wherein a first portion of each of the second surface mount components is overhanging a periphery of the semiconductor wafer. A first barrier structure is formed in between the second surface mount components and the semiconductor wafer. An underfill structure is formed under a second portion of each of the second surface mount components, wherein the first barrier structure blocks the spreading of the underfill structure from the second portion to the first portion.

Abstract: A semiconductor device according to the present disclosure includes a first gate structure and a second gate structure aligned along a direction, a first metal layer disposed over the first gate structure, a second metal layer disposed over the second gate structure, and a gate isolation structure extending between the first gate structure and the second gate structure as well as between the first metal layer and the second metal layer.

Abstract: The present invention is related to a suture having a cord member. The cord member includes a cord and an outer later covering the core. An outer circumferential surface of the core includes a plurality of protrusions, and the plurality of protrusions are arranged in a ring shape relative to a center of the core. Through spiral cutting method to perform processing on the outer circumferential surface of the outer surface, a plurality of cutting slots are formed at the outer circumferential surface of the outer layer. After the processing of each cutting slot is complete, a protruding member for retaining skin is formed correspondingly.

Abstract: The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.

Abstract: The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.

Abstract: The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.

Abstract: The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.

Abstract: An LED (light emitting diode) includes a seat and an LED chip. The seat includes a main body, and a first electrode and a second electrode formed on the main body. The LED chip includes a first semiconductor layer, an annular light-emitting layer encircling the first semiconductor layer, and an annular second semiconductor layer encircling the light-emitting layer. The first electrode electrically connects with the first semiconductor layer, and the second electrode electrically connects with the second semiconductor layer.

Abstract: An LED lamp includes a holder with a base, a first light module and a second light module. The first light module includes a first light cover and a first set of LEDs. The first light cover has a hollow conical configuration with a wide top end tapering to a small bottom end. The small bottom end of the first light cover is connected to the base. The first set of LEDs is received in a hollow space of the first light cover. The second light module includes a second light cover and a second set of LEDs received in the second light cover. The second light cover is capable of rotating relative to the first light module.

Abstract: An exemplary LED lamp includes a socket, an LED module, a signal receiver, and a signal emitter. The LED module includes a micro-computer processor, a power module and an adjuster electrically connecting with the micro-computer processor and the power module. The LED module is mounted on the adjuster. The signal receiver is mounted on the LED module. The signal receiver receives a signal emitted from the signal emitter and transmits the signal to the micro-computer processor. The micro-computer processor dictates the power module to drive the adjuster to rotate. The LED module rotates following the rotation of the adjuster to change an illumination angle of the LED module.

Abstract: An LED includes a seat and an LED chip. The seat includes a main body, a first electrode protruding upwardly from the main body, and a second electrode formed on the main body. The LED chip includes a substrate, a first semiconductor layer disposed on the substrate, a light-emitting layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the light-emitting layer, and a third electrode fixed on the second semiconductor layer. The first electrode extends through the substrate and electrically connects with the first semiconductor layer, and the third electrode electrically connects with the second electrode via a wire.

Abstract: An energy-saving illumination system includes a piezoelectric floor, a revolving door, an accumulator, a light source, and an electrical power sensing device. The piezoelectric floor contains piezoelectric material therein. The revolving door comprises a power generating device. The accumulator is electrically connected to the piezoelectric floor and the power generating device. The light source is electrically connected with the accumulator. The electrical power sensing device is configured to detect the quantity of electric charge in the accumulator; the power generating device of the revolving door charges the accumulator according to the detected result obtained from the electrical power sensing device in respect to the accumulator.

Abstract: An illumination device includes a first lighting element, a second lighting element and a pivoting shaft. The first lighting element includes a first lighting module and a first power module contacted with one side of the first lighting module for providing power to the first lighting module. The second lighting element includes a second lighting module and a second power module contacted with one side of the second lighting module for providing power to the second lighting module. The pivoting shaft includes a first stick and a second stick detachable engaging with the first stick. The first stick is rotatably connected to the first power module. The second stick is rotatably connected to the second power module.

Abstract: An LED includes a seat and an LED chip. The seat includes a main body, a first electrode protruding upwardly from the main body, and a second electrode formed on the main body. The LED chip includes a substrate, a first semiconductor layer disposed on the substrate, a light-emitting layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the light-emitting layer, and a third electrode fixed on the second semiconductor layer. The first electrode extends through the substrate and electrically connects with the first semiconductor layer, and the third electrode electrically connects with the second electrode via a wire.

Abstract: An LED (light emitting diode) includes a seat and an LED chip. The seat includes a main body, and a first electrode and a second electrode formed on the main body. The LED chip includes a first semiconductor layer, an annular light-emitting layer encircling the first semiconductor layer, and an annular second semiconductor layer encircling the light-emitting layer. The first electrode electrically connects with the first semiconductor layer, and the second electrode electrically connects with the second semiconductor layer.

Abstract: A power generating chair includes a base, a seat, a back, and a power-collecting module. The seat includes a seat housing and a first cushion received in the seat housing. The seat is positioned above the base. The seat housing is supported by the base. The first cushion is made of piezoelectric material and configured for converting mechanical energy to electrical power. The back is connected to a side of the seat. The power-collecting module is electrically connected to the first cushion and configured for storing the electrical power generated by the first cushion.