Abstract: An organic light emitting element includes a substrate, a first electrode, an organic light emitting layer, and a fluorine-containing ion residue region. The first electrode is over the substrate. The organic light emitting layer is over the first electrode. The fluorine-containing ion residue region is on at least one surface of the organic light emitting layer.

Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.

Abstract: A semiconductor device includes a semiconductor substrate; a plurality of channel regions, including a p-type channel region and an n-type channel region, disposed over the semiconductor substrate; and a gate structure. The gate structure includes a gate dielectric layer disposed over the plurality of channel regions and a work function metal (WFM) structure disposed over the gate dielectric layer. The WFM structure includes an n-type WFM layer over the n-type channel region and not over the p-type channel region and further includes a p-type WFM layer over both the n-type WFM layer and the p-type channel region. The gate structure further includes a fill metal layer disposed over the WFM structure and in direct contact with the p-type WFM layer.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a first channel structure configured to transport charge carriers within a first transistor device and a first gate electrode layer wrapping around the first channel structure. A second channel structure is configured to transport charge carriers within a second transistor device. A second gate electrode layer wraps around the second channel structure. The second gate electrode layer continuously extends from around the second channel structure to cover the first gate electrode layer. A third channel structure is configured to transport charge carriers within a third transistor device. A third gate electrode layer wraps around the third channel structure. The third gate electrode layer continuously extends from around the third channel structure to cover the second gate electrode layer.

Abstract: A method for forming a semiconductor device is provided. The method includes forming a plurality of first channel nanostructures and a plurality of second channel nanostructures in an n-type device region and a p-type device region of a substrate, respectively, and sequentially depositing a gate dielectric layer, an n-type work function metal layer, and a cap layer surrounding each of the first and second channel nanostructures. The cap layer merges in first spaces between adjacent first channel nanostructures and merges in second spaces between adjacent second channel nanostructures. The method further includes selectively removing the cap layer and the n-type work function metal layer in the p-type device region, and depositing a p-type work function metal layer over the cap layer in the n-type device region and the gate dielectric layer in the p-type device region. The p-type work function metal layer merges in the second spaces.

Abstract: A case structure for an electronic device includes a first conductive layer, a conductive housing, and a surface treatment layer. The first conductive layer has a taper protrusion. The conductive housing is disposed at one side of the first conductive layer, and a narrow end of the taper protrusion faces the conductive housing. The surface treatment layer is disposed between the taper protrusion and the second conductive layer.

Abstract: An electronic device includes a case, a board module, and an electrostatic discharging module. The case has a conductive area. The board module is disposed in the case and has a ground end. The electrostatic discharging module is disposed on the case. Besides, the electrostatic discharging module includes a first discharging element and a second discharging element. The first discharging element is electrically connected to the ground end, and the second discharging element is electrically connected to the conductive area. There exists a gap between the first discharging element and the second discharging element, so that leak current generated by the board module can be prevented from being transmitted to the case, and that an electrostatic charge can be transmitted from the case to the ground end.

Abstract: A case structure for an electronic device includes a first conductive layer, a conductive housing, and a surface treatment layer. The first conductive layer has a taper protrusion. The conductive housing is disposed at one side of the first conductive layer, and a narrow end of the taper protrusion faces the conductive housing. The surface treatment layer is disposed between the taper protrusion and the second conductive layer.

Abstract: An electronic device includes a case, a board module, and an electrostatic discharging module. The case has a conductive area. The board module is disposed in the case and has a ground end. The electrostatic discharging module is disposed on the case. Besides, the electrostatic discharging module includes a first discharging element and a second discharging element. The first discharging element is electrically connected to the ground end, and the second discharging element is electrically connected to the conductive area. There exists a gap between the first discharging element and the second discharging element, so that leak current generated by the board module can be prevented from being transmitted to the case, and that an electrostatic charge can be transmitted from the case to the ground end.

Abstract: Power limitation transformer circuit structure of power supply, including: an electromagnetic interference filter unit, a rectifying unit, a power factor correction section, a transformer having a primary input terminal and secondary input terminal, a pulse controlling unit connected with the secondary input terminal of the transformer, a primary power limitation circuit and at least one secondary power limitation circuit, an output current controlling unit and an output voltage controlling unit. The input terminal of the output current controlling unit is connected with the secondary output terminal of the transformer. The primary output terminal and secondary output terminal of the output current controlling unit are respectively serially connected with the primary and secondary power limitation circuits. The input terminal of the output voltage controlling unit is connected with the secondary output terminal of the transformer.

Abstract: A heat-radiating structure co-usable with heat-radiating window of a housing of an electronic appliance, including a housing having a rigid wall defining an interior space. At least one side of the rigid wall is formed with an opening or a heat-radiating window and multiple fin units each having a free end and a connecting end connecting with an adjacent fin unit. The fin units are serially arranged to form a fin construction. The adjacent fin units define a pitch or exhaustion gap meeting the safety standard regulated by IEC. The heat-radiating structure further has a fan unit having a connecting section connected with the connecting ends of the fin construction. The fan unit is formed with a flow way for conducting the heat generated in the housing toward the fin construction and dissipated out from the opening or heat-radiating window through the pitch or exhaustion gap.

Abstract: An electromagnetic interference (EMI) prevention structure for a signal cable, which has at least one signal wire, a plurality of shielding wires, an intermediate layer located between the signal wire and the shielding wires, and an outer layer covering the shielding wires, includes a plurality of grounding areas formed on the outer layer of the signal cable by re-distributing or removing some parts of the structural mass of the outer layer at predetermined intervals or at predetermined positions. Whereby any noise voltage produced on the signal cable across any section thereof is effectively removed via one of the grounding areas that is closest to the section at where the noise voltage is produced.