Abstract: An image sensor structure and methods of forming the same are provided. An image sensor structure according to the present disclosure includes a semiconductor substrate including a photodiode, a transfer gate transistor disposed over the semiconductor substrate and having a first channel area, a first dielectric layer disposed over the semiconductor substrate, a semiconductor layer disposed over the first dielectric layer, a source follower transistor disposed over the semiconductor layer and having a second channel area, a row select transistor disposed over the semiconductor layer and having a third channel area, and a reset transistor disposed over the semiconductor layer and having a fourth channel area. The second channel area is greater than the first channel area, the third channel area or the fourth channel area.

Abstract: A device includes: a substrate having a semiconductor fin; a stack of semiconductor channels on the substrate and positioned over the fin; a gate structure wrapping around the semiconductor channels; a source/drain abutting the semiconductor channels; an inner spacer positioned between the stack of semiconductor channels and the fin; an undoped semiconductor layer vertically adjacent the source/drain and laterally adjacent the fin; and an isolation structure that laterally surrounds the undoped semiconductor layer, the isolation structure being between the source/drain and the inner spacer.

Abstract: A semiconductor device includes a first type of light sensing units, where each instance of the first type of light sensing units is operable to receive a first amount of radiation; and a second type of light sensing units, where each instance of the second type of light sensing units is operable to receive a second amount of radiation, and the second type of light sensing units is arranged in an array with the first type of light sensing units to form a pixel sensor. The first amount of radiation is smaller than the second amount of radiation, and at least a first instance of the first type of light sensing units is adjacent to a second instance first type of light sensing unit.

Abstract: A device includes a substrate, and a first semiconductor channel over the substrate. The first semiconductor channel includes a first nanosheet of a first semiconductor material, a second nanosheet of a second semiconductor material in physical contact with a topside surface of the first nanosheet, and a third nanosheet of the second semiconductor material in physical contact with an underside surface of the first nanosheet. The first gate structure is over and laterally surrounding the first semiconductor channel, and in physical contact with the second nanosheet and the third nanosheet.

Abstract: A cable arrangement mechanism is provided, which is disposed inside the housing of an electronic device. The cable arrangement mechanism includes a first tube, a second tube, and a plurality of first resilient elements. The first tube includes a first base, a first extension connected to the first base and extending from a first inner surface, and a first extrusion connected to the first base and extending from a first outer surface. The second tube includes a second base, a second extension connected to the second base and extending from a second inner surface, and a second extrusion connected to the second base and extending from a second outer surface. The first resilient elements respectively connect the first extrusion and the second extrusion to the housing, so that the first tube and the second tube are rotatably connected to the housing.

Abstract: A device includes a substrate, and a first semiconductor channel over the substrate. The first semiconductor channel includes a first nanosheet of a first semiconductor material, a second nanosheet of a second semiconductor material in physical contact with a topside surface of the first nanosheet, and a third nanosheet of the second semiconductor material in physical contact with an underside surface of the first nanosheet. The first gate structure is over and laterally surrounding the first semiconductor channel, and in physical contact with the second nanosheet and the third nanosheet.

Abstract: Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary method includes forming a gate dielectric layer around first channel layers in a p-type gate region and around second channel layers in an n-type gate region. Sacrificial features are formed between the second channel layers in the n-type gate region. A p-type work function layer is formed over the gate dielectric layer in the p-type gate region and the n-type gate region. After removing the p-type work function layer from the n-type gate region, the sacrificial features are removed from between the second channel layers in the n-type gate region. An n-type work function layer is formed over the gate dielectric layer in the n-type gate region. A metal fill layer is formed over the p-type work function layer in the p-type gate region and the n-type work function layer in the n-type gate region.

Abstract: A semiconductor device structure and a method for forming a semiconductor device structure are provided. The method includes forming a metal gate stack wrapped around multiple semiconductor nanostructures. The semiconductor nanostructures are beside an epitaxial structure. The method includes forming a dielectric layer over the metal gate stack and the epitaxial structure. The method further includes forming a contact opening in the dielectric layer and forming a protective layer over sidewalls of the contact opening. In addition, the method includes deepening the contact opening so that the contact opening extends into the epitaxial structure after the formation of the protective layer. The method includes forming a conductive contact filling the contact opening.

Abstract: A semiconductor device is provided. The semiconductor device includes a plurality of channel layers stacked over a semiconductor substrate and spaced apart from one another, a source/drain structure adjoining the plurality of channel layers, a gate structure wrapping around the plurality of channel layers, and a first inner spacer between the gate structure and the source/drain structure and between the plurality of channel layers. The first inner spacer is made of an oxide of a semiconductor material.

Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is in the semiconductor substrate. An interface between the radiation sensing member and the semiconductor substrate includes a direct band gap material. The shallow trench isolation is in the semiconductor substrate and surrounds the radiation sensing member. The color filter layer covers the radiation sensing member.

Abstract: A method for forming a semiconductor arrangement comprises forming a first fin in a semiconductor layer. A first gate dielectric layer includes a first high-k material is formed over the first fin. A first sacrificial gate electrode is formed over the first fin. A dielectric layer is formed adjacent the first sacrificial gate electrode and over the first fin. The first sacrificial gate electrode is removed to define a first gate cavity in the dielectric layer. A second gate dielectric layer including a second dielectric material different than the first high-k material is formed over the first gate dielectric layer in the first gate cavity. A first gate electrode is formed in the first gate cavity over the second gate dielectric layer.

Abstract: A structure has stacks of semiconductor layers over a substrate and adjacent a dielectric feature. A gate dielectric is formed wrapping around each layer and the dielectric feature. A first layer of first gate electrode material is deposited over the gate dielectric and the dielectric feature. The first layer on the dielectric feature is recessed to a first height below a top surface of the dielectric feature. A second layer of the first gate electrode material is deposited over the first layer. The first gate electrode material in a first region of the substrate is removed to expose a portion of the gate dielectric in the first region, while the first gate electrode material in a second region of the substrate is preserved. A second gate electrode material is deposited over the exposed portion of the gate dielectric and over a remaining portion of the first gate electrode material.

Abstract: A workpiece orientation mechanism includes: a driving device including a transmission motor and a controller which are connected with each other via signal, the transmission motor defining an axial direction; a rotating seat, combined with the transmission motor, and capable of being driven to rotate by the transmission motor; an orientation head disposed on the rotating seat to rotate synchronously with the rotating seat, wherein the orientation head is capable of moving along the axial direction relative to the rotating seat, one end of the orientation head includes a mounting head, and a blocking member is disposed on the orientation head; reset means, arranged between the rotating seat and the orientation head, and positioning the orientation head at a predetermined position; and a sensor facing the blocking member, wherein the sensor is signally connected with the controller.

Abstract: A microbial inhibition device for inhibiting microorganisms on a predetermined object includes: a covering member covering the predetermined object, and having an attachment surface for attaching to the predetermined object, and an exposed surface opposite to the attachment surface, wherein the covering member includes at least a conductive medium layer, and the conductive medium layer constitutes a predetermined area of the exposed surface; a control module configured to issue a control command reflecting a predetermined conduction mode; and a power supply module electrically connected to the conductive medium layer, and configured to receive the control command so as to power the conductive medium layer according to the predetermined conduction mode based on the control command. The conductive medium layer is conducted with current according to the predetermined conduction mode through the power supply module. Accordingly predetermined microorganisms on the predetermined area are inhibited or killed.

Abstract: A system includes a semiconductor apparatus configured to process a workpiece, a mist generator configured to generate a mist and a particle separator configured to receive an exhaust gas generated by the semiconductor apparatus. The particle separator includes a first fan, wherein the first fan includes a plurality of blades. Each of the plurality of blades includes holes allowing the exhaust gas and the mist to pass through.

Abstract: An anode active material of a lithium-ion battery is provided. The active material of the anode of the lithium-ion battery includes silicon, tin and copper-zinc alloy, in which tin is substantially in an elemental state. Moreover, an anode of a lithium-ion battery is provided. The anode of the lithium-ion battery includes the active material as mentioned above.

Abstract: A workpiece orientation mechanism includes: a driving device including a transmission motor and a controller which are connected with each other via signal, the transmission motor defining an axial direction; a rotating seat, combined with the transmission motor, and capable of being driven to rotate by the transmission motor; an orientation head disposed to the rotating seat to rotate synchronously with the rotating seat, wherein the orientation head is capable of moving along the axial direction relative to the rotating seat, one end of the orientation head includes a mounting head, and an inductor is disposed to the orientation head; a reset means, arranged between the rotating seat and the orientation head, and positioning the orientation head at a predetermined position; and a sensor facing the inductor, wherein the sensor is signally connected with the controller.

Abstract: A dynamic storage device includes a storage area, a power carrying and moving device, a carrier group, a carrier detection device, a power transmission device, a gate, a gate detection device, a temporary storage area and a temporary storage area detection device. The storage device further includes a central control system for commanding, controlling, instructing and managing the aforementioned components and managing the information returned from each component. A Radio Frequency Identification (RFID) technology is used to implement the dynamic storage device and the dynamic access management method. The RFID tag is labelled to the carrier instead of the object, and the targets managed by the storage device and dynamic access management method are the carrier and carrier group. Each carrier forming the carrier group records the detailed object information contained in the carrier by the RFID tag, so as to achieve the effects of managing the object.

Abstract: A dynamic storage device includes a storage area, a power carrying and moving device, a carrier group, a carrier detection device, a power transmission device, a gate, a gate detection device, a temporary storage area and a temporary storage area detection device. The storage device further includes a central control system for commanding, controlling, instructing and managing the aforementioned components and managing the information returned from each component. A Radio Frequency IDentification (RFID) technology is used to implement the dynamic storage device and the dynamic access management method. Basically, the RFID tag is labelled to the carrier instead of the object, and the targets managed by the storage device and dynamic access management method are the carrier and carrier group.

Abstract: An anode active material of a lithium ion battery includes primary particles. The primary particles include Si, Sn and Sb. The primary particles have peaks at X-ray diffraction 2? position of 29.1±1°, 41.6±1°, 51.6±1°, 60.4±1°, 68.5±1°, and 76.1±1°.