Patents by Inventor Kuo-Cheng Huang
Kuo-Cheng Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12199190Abstract: A semiconductor device according to the present disclosure includes a fin structure over a substrate, a vertical stack of silicon nanostructures disposed over the fin structure, an isolation structure disposed around the fin structure, a germanium-containing interfacial layer wrapping around each of the vertical stack of silicon nanostructures, a gate dielectric layer wrapping around the germanium-containing interfacial layer, and a gate electrode layer wrapping around the gate dielectric layer.Type: GrantFiled: June 5, 2023Date of Patent: January 14, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Mao-Lin Huang, Jia-Ni Yu, Lung-Kun Chu, Chung-Wei Hsu, Chih-Hao Wang, Kuo-Cheng Chiang, Kuan-Lun Cheng
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Patent number: 12198986Abstract: A semiconductor structure includes a fin disposed on a substrate, the fin including a channel region comprising a plurality of channels vertically stacked over one another, the channels comprising germanium distributed therein. The semiconductor structure further includes a gate stack engaging the channel region of the fin and gate spacers disposed between the gate stack and the source and drain regions of the fin, wherein each channel of the channels includes a middle section wrapped around by the gate stack and two end sections engaged by the gate spacers, wherein a concentration of germanium in the middle section of the channel is higher than a concentration of germanium in the two end sections of the channel, and wherein the middle section of the channel further includes a core portion and an outer portion surrounding the core portion with a germanium concentration profile from the core portion to the outer portion.Type: GrantFiled: August 7, 2023Date of Patent: January 14, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wei-Sheng Yun, Chih-Hao Wang, Jui-Chien Huang, Kuo-Cheng Chiang, Chih-Chao Chou, Chun-Hsiung Lin, Pei-Hsun Wang
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Patent number: 12191327Abstract: The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a substrate and a transfer gate disposed from a front-side surface of the substrate. The CMOS image sensor further comprises a photo detecting column disposed at one side of the transfer gate within the substrate. The photo detecting column comprises a doped sensing layer comprising one or more recessed portions along a circumference of the doped sensing layer in parallel to the front-side surface of the substrate. By forming the photo detecting column with recessed portions, a junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.Type: GrantFiled: November 2, 2023Date of Patent: January 7, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Yu Wei, Hsin-Chi Chen, Kuo-Cheng Lee, Ping-Hao Lin, Hsun-Ying Huang, Yen-Liang Lin, Yu Ting Kao
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Patent number: 12191209Abstract: A semiconductor device is provided. The semiconductor device includes a plurality of first semiconductor nanostructures formed over a substrate, and a first S/D structure formed on sidewall surfaces of the first semiconductor nanostructures. The semiconductor device includes a plurality of second semiconductor nanostructures formed over the substrate, and a second S/D structure formed on sidewall surfaces of the second semiconductor nanostructures. The semiconductor device includes an isolation structure formed between the first S/D structure and the second S/D structure, and the isolation structure has a first sidewall surface in direct contact with the first S/D structure and a second sidewall surface in direct contact with the second S/D structure.Type: GrantFiled: April 10, 2023Date of Patent: January 7, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kuo-Cheng Chiang, Chung-Wei Hsu, Lung-Kun Chu, Jia-Ni Yu, Chih-Hao Wang, Mao-Lin Huang
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Publication number: 20250006548Abstract: An integrated circuit includes a transistor including a plurality of stacked channels. A first dielectric wall structure is positioned on a first lateral side of the stacked channels. A second dielectric wall structure is positioned on a second lateral side of the stacked channels. A dielectric home structure is positioned above the top channel. A gate electrode includes a vertical column extending vertically between the second dielectric wall structure and the stacked channels. The gate electrode includes finger portions extending laterally from the vertical column between the stacked channels.Type: ApplicationFiled: November 1, 2023Publication date: January 2, 2025Inventors: Hsien-Chih HUANG, Guan-Lin CHEN, Chia-Hao CHANG, Shi Ning JU, Kuo-Cheng CHIANG, Chih-Hao WANG
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Patent number: 12183629Abstract: A method includes forming a gate electrode on a semiconductor region, recessing the gate electrode to generate a recess, performing a first deposition process to form a first metallic layer on the gate electrode and in the recess, wherein the first deposition process is performed using a first precursor, and performing a second deposition process to form a second metallic layer on the first metallic layer using a second precursor different from the first precursor. The first metallic layer and the second metallic layer comprise a same metal. The method further incudes forming a dielectric hard mask over the second metallic layer, and forming a gate contact plug penetrating through the dielectric hard mask. The gate contact plug contacts a top surface of the second metallic layer.Type: GrantFiled: July 20, 2022Date of Patent: December 31, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chung-Chiang Wu, Po-Cheng Chen, Kuo-Chan Huang, Pin-Hsuan Yeh, Wei-Chin Lee, Hsien-Ming Lee, Chien-Hao Chen, Chi On Chui
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Publication number: 20240429666Abstract: A combination of electrical plug connector and matching electrical socket connector includes a plug connector, a sliding seat, a buckle assembly, a draw belt, and a socket connector. When the plug connector is docked with the socket connector, the supporting spring leaves of the buckle assembly support down to the holder base of the plug connector, so that the hook portions of the buckle assembly are hooked in the hook holes of the socket connector. When pressing the buckle assembly or pulling the draw belt, the supporting spring leaves are elastically deformed, and the hook portions are disengaged from the hook holes for separation between the plug connector and the socket connector. An insulating colloid is formed on the holder base to fix the circuit board of the plug connector, thereby firmly combining the plug connector with the holder base.Type: ApplicationFiled: July 24, 2023Publication date: December 26, 2024Inventors: Chu-Cheng WU, Kuo-Hua HUANG
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Publication number: 20240429656Abstract: The invention discloses an electrical plug connector snap release structure, which includes a plug connector, a sliding seat, a draw belt and a buckle assembly, and a matching electrical socket connector. When the plug connector is docked with the socket connector, each supporting spring leaf of the buckle assembly supports down to the holder base of the plug connector, so that the support arms of the buckle assembly force the hook portions thereof to hook in the respective hook holes of the socket connector. When pressing the pressing surface of the buckle assembly or when the draw belt is driven to pull the sliding seat, the supporting spring leaves are elastically deformed and the hook portions are disengaged from the hook holes, allowing the plug connector to be easily disconnected from the socket connector.Type: ApplicationFiled: July 24, 2023Publication date: December 26, 2024Inventors: Chu-Cheng WU, Kuo-Hua HUANG
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Patent number: 12170231Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary method comprises forming a first stack structure and a second stack structure in a first area over a substrate, wherein each of the stack structures includes semiconductor layers separated and stacked up; depositing a first interfacial layer around each of the semiconductor layers of the stack structures; depositing a gate dielectric layer around the first interfacial layer; forming a dipole oxide layer around the gate dielectric layer; removing the dipole oxide layer around the gate dielectric layer of the second stack structure; performing an annealing process to form a dipole gate dielectric layer for the first stack structure and a non-dipole gate dielectric layer for the second stack structure; and depositing a first gate electrode around the dipole gate dielectric layer of the first stack structure and the non-dipole gate dielectric layer of the second stack structure.Type: GrantFiled: July 26, 2022Date of Patent: December 17, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chung-Wei Hsu, Kuo-Cheng Chiang, Kuan-Lun Cheng, Hou-Yu Chen, Ching-Wei Tsai, Chih-Hao Wang, Lung-Kun Chu, Mao-Lin Huang, Jia-Ni Yu
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Patent number: 12166100Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises first semiconductor layers and second semiconductor layers over a substrate, wherein the first semiconductor layers and the second semiconductor layers are separated and stacked up, and a thickness of each second semiconductor layer is less than a thickness of each first semiconductor layer; a first interfacial layer around each first semiconductor layer; a second interfacial layer around each second semiconductor layer; a first dipole gate dielectric layer around each first semiconductor layer and over the first interfacial layer; a second dipole gate dielectric layer around each second semiconductor layer and over the second interfacial layer; a first gate electrode around each first semiconductor layer and over the first dipole gate dielectric layer; and a second gate electrode around each second semiconductor layer and over the second dipole gate dielectric layer.Type: GrantFiled: August 9, 2023Date of Patent: December 10, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chung-Wei Hsu, Kuo-Cheng Chiang, Lung-Kun Chu, Mao-Lin Huang, Jia-Ni Yu, Chih-Hao Wang
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Publication number: 20240387541Abstract: A semiconductor device is provided. The semiconductor device includes first channel nanostructures in a first device region and second channel nanostructures in a second device region. The first channel nanostructures are disposed between first and second dielectric fins. The second channel nanostructures are disposed between first and third dielectric fins. A gate dielectric layer is formed to surround each of the first and the second channel nanostructures and over the first, the second and the third dielectric fins. A first work function layer is formed to surround each of the first channel nanostructures. A second work function layer is formed to surround each of the second channel nanostructures. A first gap is present between every adjacent first channel nanostructures and a second gap present is between every adjacent second channel nanostructures.Type: ApplicationFiled: July 30, 2024Publication date: November 21, 2024Inventors: Chung-Wei HSU, Kuo-Cheng CHIANG, Mao-Lin HUANG, Lung-Kun CHU, Jia-Ni YU, Kuan-Lun CHENG, Chih-Hao WANG
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Publication number: 20240387257Abstract: A method includes forming a gate electrode on a semiconductor region, recessing the gate electrode to generate a recess, performing a first deposition process to form a first metallic layer on the gate electrode and in the recess, wherein the first deposition process is performed using a first precursor, and performing a second deposition process to form a second metallic layer on the first metallic layer using a second precursor different from the first precursor. The first metallic layer and the second metallic layer comprise a same metal. The method further incudes forming a dielectric hard mask over the second metallic layer, and forming a gate contact plug penetrating through the dielectric hard mask. The gate contact plug contacts a top surface of the second metallic layer.Type: ApplicationFiled: July 30, 2024Publication date: November 21, 2024Inventors: Chung-Chiang Wu, Po-Cheng Chen, Kuo-Chan Huang, Pin-Hsuan Yeh, Wei-Chin Lee, Hsien-Ming Lee, Chien-Hao Chen, Chi On Chui
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Publication number: 20240387687Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises first semiconductor layers and second semiconductor layers over a substrate, wherein the first semiconductor layers and the second semiconductor layers are separated and stacked up, and a thickness of each second semiconductor layer is less than a thickness of each first semiconductor layer; a first interfacial layer around each first semiconductor layer; a second interfacial layer around each second semiconductor layer; a first dipole gate dielectric layer around each first semiconductor layer and over the first interfacial layer; a second dipole gate dielectric layer around each second semiconductor layer and over the second interfacial layer; a first gate electrode around each first semiconductor layer and over the first dipole gate dielectric layer; and a second gate electrode around each second semiconductor layer and over the second dipole gate dielectric layer.Type: ApplicationFiled: July 30, 2024Publication date: November 21, 2024Inventors: Chung-Wei Hsu, Kuo-Cheng Chiang, Lung-Kun Chu, Mao-Lin Huang, Jia-Ni Yu, Chih-Hao Wang
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Publication number: 20240387287Abstract: Provided are FinFET devices and methods of forming the same. A FinFET device includes a substrate, a first gate strip and a second gate strip. The substrate has at least one first fin in a first region, at least one second fin in a second region and an isolation layer covering lower portions of the first and second fins. The first fin includes a first material layer and a second material layer over the first material layer, and the interface between the first material layer and the second material layer is uneven. The first gate strip is disposed across the first fin. The second gate strip is disposed across the second fin.Type: ApplicationFiled: July 30, 2024Publication date: November 21, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Hao Wang, Jui-Chien Huang, Kuo-Cheng Ching, Chun-Hsiung Lin, Pei-Hsun Wang
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Publication number: 20240387538Abstract: A semiconductor device is provided. The semiconductor device includes first channel nanostructures in a first device region, second channel nanostructures in a second device region, a dielectric fin at a boundary between the first device region and the second device region, a high-k dielectric layer surrounding each of the first channel nanostructures and each of the second channel nanostructures and over the dielectric fin, a first work function layer surrounding each of the first channel nanostructures and over the high-k dielectric layer and a second work function layer surrounding each of the second channel nanostructures and over the high-k dielectric layer and the first work function layer. The first work function layer fully fills spaces between the first channel nanostructures and has an edge located above the dielectric fin. The second work function layer fully fills spaces between the second channel nanostructures.Type: ApplicationFiled: July 26, 2024Publication date: November 21, 2024Inventors: Lung-Kun CHU, Mao-Lin HUANG, Chung-Wei HSU, Jia-Ni YU, Chun-Fu LU, Kuo-Cheng CHIANG, Kuan-Lun CHENG, Chih-Hao WANG
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Publication number: 20240387745Abstract: A semiconductor device according to the present disclosure includes a fin structure over a substrate, a vertical stack of silicon nanostructures disposed over the fin structure, an isolation structure disposed around the fin structure, a germanium-containing interfacial layer wrapping around each of the vertical stack of silicon nanostructures, a gate dielectric layer wrapping around the germanium-containing interfacial layer, and a gate electrode layer wrapping around the gate dielectric layer.Type: ApplicationFiled: July 29, 2024Publication date: November 21, 2024Inventors: Mao-Lin Huang, Jia-Ni Yu, Lung-Kun Chu, Chung-Wei Hsu, Chih-Hao Wang, Kuo-Cheng Chiang, Kuan-Lun Cheng
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Publication number: 20240387628Abstract: A method of forming a semiconductor device includes forming a first dielectric layer over a first channel region in a first region and over a second channel region in a second region; introducing a first dipole element into the first dielectric layer in the first region to form a first dipole-containing gate dielectric layer in the first region; forming a second dielectric layer over the first dipole-containing gate dielectric layer; introducing fluorine into the second dielectric layer to form a first fluorine-containing gate dielectric layer over the first dipole-containing gate dielectric layer; and forming a gate electrode over the first fluorine-containing gate dielectric layer.Type: ApplicationFiled: July 28, 2024Publication date: November 21, 2024Inventors: Chung-Wei Hsu, Kuo-Cheng Chiang, Mao-Lin Huang, Lung-Kun Chu, Jia-Ni Yu, Chun-Fu Lu, Chih-Hao Wang
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Patent number: 12148812Abstract: A device includes a first channel layer over a semiconductor substrate, a second channel layer over the first channel layer, and a third channel layer over the second channel layer. The channel layers each connects a first and a second source/drain along a first direction. The device also includes a first gate portion between the first and second channel layers; a second gate portion between the second and third channel layers; a first inner spacer between the first and second channel layers and between the first gate portion and the first source/drain; and a second inner spacer between the second and third channel layers and between the second gate portion and the first source/drain. The first and second gate portions have substantially the same gate lengths along the first direction. The first inner spacer has a width along the first direction that is greater than the second inner spacer has.Type: GrantFiled: July 26, 2022Date of Patent: November 19, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Jui-Chien Huang, Kuo-Cheng Chiang, Chih-Hao Wang, Shi Ning Ju, Guan-Lin Chen
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Patent number: 12148673Abstract: Provided are FinFET devices and methods of forming the same. A FinFET device includes a substrate, a first gate strip and a second gate strip. The substrate has at least one first fin in a first region, at least one second fin in a second region and an isolation layer covering lower portions of the first and second fins. The first fin includes a first material layer and a second material layer over the first material layer, and the interface between the first material layer and the second material layer is uneven. The first gate strip is disposed across the first fin. The second gate strip is disposed across the second fin.Type: GrantFiled: August 1, 2023Date of Patent: November 19, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Hao Wang, Jui-Chien Huang, Kuo-Cheng Ching, Chun-Hsiung Lin, Pei-Hsun Wang
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Patent number: 12148750Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a first channel structure configured to transport charge carriers within a first transistor device and a first gate electrode layer wrapping around the first channel structure. A second channel structure is configured to transport charge carriers within a second transistor device. A second gate electrode layer wraps around the second channel structure. The second gate electrode layer continuously extends from around the second channel structure to cover the first gate electrode layer. A third channel structure is configured to transport charge carriers within a third transistor device. A third gate electrode layer wraps around the third channel structure. The third gate electrode layer continuously extends from around the third channel structure to cover the second gate electrode layer.Type: GrantFiled: November 16, 2023Date of Patent: November 19, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Mao-Lin Huang, Chih-Hao Wang, Kuo-Cheng Chiang, Jia-Ni Yu, Lung-Kun Chu, Chung-Wei Hsu