Abstract: A socket includes multiple protrusions and grooves alternatively formed in the inner periphery of the central hole of the socket. Each protrusion has an encounter face formed on the distal end thereof. The encounter face includes two inclined faces which intersect at a peak point by a top angle. Each protrusion includes two lateral sides which respectively face the grooves corresponding thereto. The two inclined faces respectively intersect the two lateral sides at a corner by a corner angle which is an obtuse angle. An angle of 2 to 9 degrees is defined between each of the inclined face and a chord that passes the peak point and is perpendicular to an axis of the protrusion. The center angle between the two lateral sides of each protrusion is 25 to 44 degrees and the engagement between the two inclined faces and the worn object can be enhanced.

Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.

Abstract: A low pressure drop automotive liquid-cooling heat dissipation plate and an enclosed automotive liquid-cooling cooler having the same are provided. The low pressure drop automotive liquid-cooling heat dissipation plate includes a heat dissipation plate body and three fin sets. The heat dissipation plate body has a first heat dissipation surface and a second heat dissipation surface that are opposite to each other. The first heat dissipation surface is in contact with three traction inverter power component sets, and the second heat dissipation surface is in contact with a cooling fluid. Three heat dissipation regions that are spaced equidistantly apart from each other and that have a same size are defined on the second heat dissipation surface along a flow direction of the cooling fluid, and respectively correspond to three projection areas formed by projecting three traction inverter power component sets on the second heat dissipation surface.

Abstract: An electronic device has a narrow viewing angle state and a wide viewing angle state, and includes a panel and a light source providing a light passing through the panel. In the narrow viewing angle state, the light has a first relative light intensity and a second relative light intensity. The first relative light intensity is the strongest light intensity, the second relative light intensity is 50% of the strongest light intensity, the first relative light intensity corresponds to an angle of 0°, the second relative light intensity corresponds to a half-value angle, and the half-value angle is between ?15° and 15°. In the narrow angle state, a third relative light intensity at each angle between 20° and 60° or each angle between ?20° and ?60° is lower than 20% of the strongest light intensity.

Abstract: A semiconductor die package includes an inductor-capacitor (LC) semiconductor die that is directly bonded with a logic semiconductor die. The LC semiconductor die includes inductors and capacitors that are integrated into a single die. The inductors and capacitors of the LC semiconductor die may be electrically connected with transistors and other logic components on the logic semiconductor die to form a voltage regulator circuit of the semiconductor die package. The integration of passive components (e.g., the inductors and capacitors) of the voltage regulator circuit into a single semiconductor die reduces signal propagation distances in the voltage regulator circuit, which may increase the operating efficiency of the voltage regulator circuit, may reduce the formfactor for the semiconductor die package, may reduce parasitic capacitance and/or may reduce parasitic inductance in the voltage regulator circuit (thereby improving the performance of the voltage regulator circuit), among other examples.

Abstract: A low pressure drop automotive liquid-cooling heat dissipation plate and an enclosed automotive liquid-cooling cooler having the same are provided. The low pressure drop automotive liquid-cooling heat dissipation plate includes a heat dissipation plate body and three fin sets. The heat dissipation plate body has a first heat dissipation surface and a second heat dissipation surface that are opposite to each other. The first heat dissipation surface is in contact with three traction inverter power component sets, and the second heat dissipation surface is in contact with a cooling fluid. Three heat dissipation regions that are spaced equidistantly apart from each other and that have a same size are defined on the second heat dissipation surface along a flow direction of the cooling fluid, and respectively correspond to three projection areas formed by projecting three traction inverter power component sets on the second heat dissipation surface.

Abstract: A vehicle water-cooling heat sink plate having fin sets with different fin pitch distances is provided. The vehicle water-cooling heat sink plate includes a heat-dissipating plate body and three fin sets. The heat-dissipating plate body has a first heat-dissipating surface and a second heat-dissipating surface that are opposite to each other, the first heat-dissipating surface is used for contacting three traction inverter power component sets, and the second heat-dissipating surface is used for contacting a cooling fluid. The second heat-dissipating surface of the heat-dissipating plate body along a flow direction of the cooling fluid is divided into three heat-dissipating areas which are spaced apart from each other and have the same size, and the three heat-dissipating areas respectively correspond to three projection areas that are respectively generated by the three traction inverter power component sets.

Abstract: A vehicle water-cooling heat sink plate having fin sets with different surface areas is provided. The vehicle water-cooling heat sink plate includes a heat-dissipating plate body and three fin sets. The heat-dissipating plate body has a first heat-dissipating surface and a second heat-dissipating surface that are opposite to each other, the first heat-dissipating surface is used for contacting three traction inverter power component sets, and the second heat-dissipating surface is used for contacting a cooling fluid. The second heat-dissipating surface of the heat-dissipating plate body along a flow direction of the cooling fluid is divided into three heat-dissipating areas which are spaced apart from each other and have the same size, and the three heat-dissipating areas respectively correspond to three projection areas that are respectively generated by the three traction inverter power component sets.

Abstract: The present invention discloses a display including a display panel and a light redirecting film disposed on the viewing side of the display panel. The light redirecting film comprises a light redistribution layer, and a light guide layer disposed on the light redistribution layer. The light redistribution layer includes a plurality of strip-shaped micro prisms extending along a first direction and arranged at intervals and a plurality of diffraction gratings arranged at the bottom of the intervals between the adjacent strip-shaped micro prisms, wherein each of the strip-shaped micro prisms has at least one inclined light-guide surface, and the bottom of each interval has at least one set of diffraction gratings, and the light guide layer is in contact with the strip-shaped micro prisms and the diffraction gratings.

Abstract: The address conversion system includes a storage device, a memory bus, and a processor. The processor is configured to execute the following steps: generating a real buffer on the storage device; generating a fake buffer in a fake capacity of the storage device by a fake buffer algorithm; establishing a coupling relationship between the real buffer and the fake buffer through a coupling algorithm by the coupler of the memory bus; receiving a compressed data from a first device by the real buffer; when a second device wants to read the fake buffer, the coupler guides the second device to the real buffer through the coupling relationship for reading; transmitting the compressed data of the real buffer to the coupler by the memory bus; decompressing the compressed data into a decompressed data by the coupler; and transmitting the decompressed data to the second device by the memory bus.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: A semiconductor device includes a semiconductor substrate; a plurality of channel regions, including a p-type channel region and an n-type channel region, disposed over the semiconductor substrate; and a gate structure. The gate structure includes a gate dielectric layer disposed over the plurality of channel regions and a work function metal (WFM) structure disposed over the gate dielectric layer. The WFM structure includes an n-type WFM layer over the n-type channel region and not over the p-type channel region and further includes a p-type WFM layer over both the n-type WFM layer and the p-type channel region. The gate structure further includes a fill metal layer disposed over the WFM structure and in direct contact with the p-type WFM layer.

Abstract: Examples of an integrated circuit with gate cut features and a method for forming the integrated circuit are provided herein. In some examples, a workpiece is received that includes a substrate and a plurality of fins extending from the substrate. A first layer is formed on a side surface of each of the plurality of fins such that a trench bounded by the first layer extends between the plurality of fins. A cut feature is formed in the trench. A first gate structure is formed on a first fin of the plurality of fins, and a second gate structure is formed on a second fin of the plurality of fins such that the cut feature is disposed between the first gate structure and the second gate structure.

Abstract: A semiconductor device according to embodiments of the present disclosure includes a first die including a first bonding layer and a second die including a second hybrid bonding layer. The first bonding layer includes a first dielectric layer and a first metal coil embedded in the first dielectric layer. The second bonding layer includes a second dielectric layer and a second metal coil embedded in the second dielectric layer. The second hybrid bonding layer is bonded to the first hybrid bonding layer such that the first dielectric layer is bonded to the second dielectric layer and the first metal coil is bonded to the second metal coil.

Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: Method and apparatus for removing a peripheral portion of a glass sheet. The glass sheet is placed in a predetermined position. A score line is formed on a major surface of the glass sheet. The score line demarcates a central region and a peripheral portion. A push bar is moved in a direction of a back-up bar assembly such to contact the major surface along the peripheral portion. The push bar is further moved in the direction to cause the peripheral portion to separate from the central region, and then become captured between the push bar and the back-up bar assembly. With some embodiments, the glass sheet is vertically oriented and the peripheral portion is not constrained during formation of the score line.

Abstract: Method and apparatus for removing a peripheral portion of a glass sheet. The glass sheet is placed in a predetermined position. A score line is formed on a major surface of the glass sheet. The score line demarcates a central region and a peripheral portion. A push bar is moved in a direction of a back-up bar assembly such to contact the major surface along the peripheral portion. The push bar is further moved in the direction to cause the peripheral portion to separate from the central region, and then become captured between the push bar and the back-up bar assembly. With some embodiments, the glass sheet is vertically oriented and the peripheral portion is not constrained during formation of the score line.

Abstract: A socket includes multiple protrusions and grooves alternatively formed in the inner periphery of the central hole of the socket. Each protrusion has an encounter face formed on the distal end thereof. The encounter face includes two inclined faces which intersect at a peak point by a top angle. Each protrusion includes two lateral sides which respectively face the grooves corresponding thereto. The two inclined faces respectively intersect the two lateral sides at a corner by a corner angle which is an obtuse angle. An angle of 2 to 9 degrees is defined between each of the inclined face and a chord that passes the peak point and is perpendicular to an axis of the protrusion. The center angle between the two lateral sides of each protrusion is 25 to 44 degrees. The socket effectively drives rounded object and the corners of each protrusions are not damaged.

Abstract: A power transmission device includes a box, a first platform, a second platform, a rotating shaft, a first gear, a second gear, a motor, and an energy output end. The motor is provided on the first platform and includes a third gear. The third gear meshes directly with the first gear such that when the motor drives the third gear into rotation, the first gear is driven into rotation by the third gear and in turn drives the rotating shaft and the second gear into rotation. The energy output end functions as a stop, has a gear structure for meshing with the second gear, and is configured to convert the energy generated by the rotation of the second gear and store the converted energy.