Abstract: An image sensor device has a first number of first pixels disposed in a substrate and a second number of second pixels disposed in the substrate. The first number is substantially equal to the second number. A light-blocking structure disposed over the first pixels and the second pixels. The light-blocking structure defines a plurality of first openings and second openings through which light can pass. The first openings are disposed over the first pixels. The second openings are disposed over the second pixels. The second openings are smaller than the first openings. A microcontroller is configured to turn on different ones of the second pixels at different points in time.

Abstract: A wide-band gap semiconductor device and a method of manufacturing the same are provided. The wide-band gap semiconductor device of the disclosure includes a substrate, an epitaxial layer, an array of merged PN junction Schottky (MPS) diode, and an edge termination area surrounding the array of MPS diode. The epitaxial layer includes a first plane, a second plane, and trenches between the first plane and the second plane. The array of MPS diode is formed in the first plane of the epitaxial layer. The edge termination area includes a floating ring region having floating rings formed in the second plane of the epitaxial layer, and a transition region between the floating ring region and the array of MPS diode. The transition region includes a PIN diode formed in the plurality of trenches and on the epitaxial layer between the trenches.

Abstract: An electronic device and a temperature detection device thereof are provided. The temperature detection device includes a differential stage circuit and an output stage circuit. The differential stage circuit includes a first differential end and a second differential end, and includes a cross-coupled transistor element, a first resistor and a second transistor. The cross-coupled transistor element receives a first voltage. The first resistor is coupled between the first differential end and a second voltage, and the first resistor is poly-silicon resistor. The second resistor is coupled between the second differential end and the second voltage, and the second resistor is a silicon carbide diffusion resistor. The output stage circuit generates a driving voltage according to a first control voltage on the first differential end and a second control voltage on the second differential end.

Abstract: A semiconductor device includes a substrate, a bottom electrode, a ferroelectric layer, a noble metal electrode, and a non-noble metal electrode. The bottom electrode is over the substrate. The ferroelectric layer is over the bottom electrode. The noble metal electrode is over the ferroelectric layer. The non-noble metal electrode is over the noble metal electrode.

Abstract: An electronic device and a temperature detection device thereof are provided. The temperature detection device includes a first resistor, a second resistor, and an operation circuit. The first resistor and the second resistor are coupled in series between a detection end and a first voltage. The first resistor and the second resistor divide a detection voltage on the detection end to generate a monitoring voltage. The operation circuit compares the monitoring voltage with a plurality of reference voltages to generate a plurality of comparison results. The operation circuit performs an operation on the comparison results to generate detection temperature information. The first resistor is a poly-silicon resistor and the second resistor is a silicon carbon (SiC) diffusion resistor.

Abstract: A driving voltage generating device includes a temperature detector, a controlling circuitry, a voltage generator, and an output stage circuitry. The temperature detector is coupled to a control terminal of a power transistor and is configured to generate temperature detection information by detecting an ambient temperature. The controlling circuitry is coupled to the temperature detector and generates an activation signal by determining whether the ambient temperature is abnormal according to the temperature detection information. The voltage generator generates an operation power according to the activation signal. The output stage circuitry is coupled to the voltage generator, generates a driving voltage according to the operation power, and provides the driving voltage to the control terminal of the power transistor.

Abstract: A temperature sensing device includes a resistor string and a control circuitry. The resistor string includes a variable resistor, a first resistor, and a second resistor which are coupled in series with each other. The resistor string is coupled between a sensing end and a reference ground voltage. The first resistor and the second resistor are coupled to a monitoring end to provide a monitoring voltage. The control circuitry compares the monitoring voltage with a plurality of reference voltages to generate sensing temperature information, and generate adjustment information according to the sensing temperature information. The control circuitry adjusts a resistance provided by the variable resistor according to the adjustment information. The first resistor is a polysilicon resistor, and the second resistor is a silicon carbide diffusion resistor.

Abstract: A method for performing adaptive multi-link aggregation dispatching control in multi-link operation architecture and associated apparatus are provided.

Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is in the semiconductor substrate. An interface between the radiation sensing member and the semiconductor substrate includes a direct band gap material. The shallow trench isolation is in the semiconductor substrate and surrounds the radiation sensing member. The color filter layer covers the radiation sensing member.

Abstract: The present disclosure relates to an integrated chip structure. The integrated chip structure includes a first source/drain region and a second source/drain region disposed within a substrate. A select gate is over the substrate between the first source/drain region and the second source/drain region. A ferroelectric random access memory (FeRAM) device is over the substrate between the select gate and the first source/drain region. A transistor device is disposed on an upper surface of the substrate. The substrate has a recessed surface that is below the upper surface of the substrate and that is laterally separated from the upper surface of the substrate by a boundary isolation structure extending into a trench within the upper surface of the substrate. The FeRAM device is arranged over the recessed surface.

Abstract: The present invention provides a resonant switched capacitor voltage converter (RSCC), which is coupled to and operates synchronously with another RSCC. The RSCC includes: plural switches, a resonant inductor, a resonant capacitor, and a control circuit. The control circuit controls the switches, so that the resonant capacitor and the resonant inductor are connected in series to each other, to perform resonant operation in a switching period, thus converting an input voltage to an output voltage. The control circuit generates a zero current signal and a first synchronization signal when a resonant inductor current flowing through the resonant inductor is zero. The control circuit turns off at least one corresponding switch according to the zero current signal. The control circuit turns on at least one corresponding switch according to the zero-current signal and a second synchronization signal, so that the RSCC operates in synchronization with at least another RSCC.

Abstract: An image processing unit including an always on circuit block and a non-always on circuit block is provided. When operating under a first operation mode, the non-always on circuit block receives a bias voltage from a power supply unit, so as to perform an image processing operation on an image input signal. When operating under a second operation mode, the non-always on circuit block stops receiving the bias voltage from the power supply unit, so as to stop the image processing operation, and at least a microcontroller of the non-always on circuit block is powered down. One of the always on circuit block and the non-always on circuit block controls the power supply unit to stop supplying the bias voltage to the non-always on circuit block according an event trigger signal, such that the non-always on circuit block enters the second operation mode from the first operation mode.

Abstract: An image processing unit including an always on circuit block and a non-always on circuit block is provided. When operating under a first operation mode, the non-always on circuit block receives a bias voltage from a power supply unit, so as to perform an image processing operation on an image input signal. When operating under a second operation mode, the non-always on circuit block stops receiving the bias voltage from the power supply unit, so as to stop the image processing operation, and at least a microcontroller of the non-always on circuit block is powered down. One of the always on circuit block and the non-always on circuit block controls the power supply unit to stop supplying the bias voltage to the non-always on circuit block according an event trigger signal, such that the non-always on circuit block enters the second operation mode from the first operation mode.

Abstract: A method for detecting signals in a TMDS transmission system having a channel established between a receiver and a transmitter includes separating loadings of the receiver from the channel, providing a first reference current in a first differential line of the channel, providing a second reference current in a second differential line of the channel, computing a difference between the first reference current and a current provided by the transmitter via the first differential line to obtain a first current difference, computing a difference between the second reference current and a current provided by the transmitter via the second differential line to obtain a second current difference, and determining an operating state of the transmitter according to the first current difference and the second current difference.

Abstract: A display apparatus including an analog-to-digital converter (ADC) module, a phase detecting module, and a clock generator is provided. The ADC module is used to receive a first analog video signal, and convert the first analog video signal into a digital signal according to a clock signal. The first analog video signal includes a first synchronous information and a first video information. The phase detecting module is used to receive the digital signal, and output a phase adjustment signal according to a part of the digital signal corresponding to the first synchronous information. The clock generator is used to output the clock signal according to the phase adjustment signal.

Abstract: A method for detecting signals in a TMDS transmission system is disclosed. A channel of the TMDS system is established between a receiver and a transmitter. The method includes separating loadings of the receiver from the channel, providing a first reference current in a first differential line of the channel, providing a second reference current in a second differential line of the channel, computing a difference between the first reference current and a current provided by the transmitter via the first differential line to obtain a first current difference, computing a difference between the second reference current and a current provided by the transmitter via the second differential line to obtain a second current difference, and determining an operating state of the transmitter according to the first current difference and the second current difference.

Abstract: A display apparatus including an analog-to-digital converter (ADC) module, a phase detecting module, and a clock generator is provided. The ADC module is used to receive a first analog video signal, and convert the first analog video signal into a digital signal according to a clock signal. The first analog video signal includes a first synchronous information and a first video information. The phase detecting module is used to receive the digital signal, and output a phase adjustment signal according to a part of the digital signal corresponding to the first synchronous information. The clock generator is used to output the clock signal according to the phase adjustment signal.

Abstract: A synchronization signal extraction device includes a signal reception terminal for receiving a composite video signal, a threshold voltage adjuster coupled to the signal reception terminal for adjusting a threshold voltage to a ratio of a first characteristic level and a second characteristic level of the composite video signal according to the first characteristic level and the second characteristic level, a slicer coupled to the signal reception terminal and the threshold voltage adjuster for slicing the composite video signal to extract a synchronization signal in the composite video signal, and a signal output terminal coupled to the slicer for outputting the extracted synchronization signal.

Abstract: A method and a device for improving debug time of a display apparatus are provided. The display apparatus includes an input signal connector for receiving an external input signal, an MCU, a bus and a plurality of units. The input signal connector is connected to the MCU via the bus, and the MCU is connected to the plurality of units via the bus. First, whether the MCU has entered the debug mode is detected; and when it is detected that the MCU has entered the debug mode, the bus switches to directly connect to the plurality of units in the display apparatus for allowing the external signal transmitted directly to the plurality of units for debugging.

Abstract: An apparatus and a method for detecting the sync signal of a data signal are disclosed. The apparatus includes a clamping unit, a subtraction unit and a detection unit. The clamping unit receives the data signal and varies the level of the data signal. The subtraction unit coupled to the clamping unit subtracts the level of the data signal from that of the output of the clamping unit and then outputs the subtracting result. The detection unit coupled to the subtraction unit detects the subtracting result from the subtraction unit and judges the sync signal in the data signal accordingly.