Abstract: A semiconductor device includes a substrate, a bottom electrode, a ferroelectric layer, a noble metal electrode, and a non-noble metal electrode. The bottom electrode is over the substrate. The ferroelectric layer is over the bottom electrode. The noble metal electrode is over the ferroelectric layer. The non-noble metal electrode is over the noble metal electrode.

Abstract: The present disclosure relates to an integrated chip structure. The integrated chip structure includes a first source/drain region and a second source/drain region disposed within a substrate. A select gate is over the substrate between the first source/drain region and the second source/drain region. A ferroelectric random access memory (FeRAM) device is over the substrate between the select gate and the first source/drain region. A transistor device is disposed on an upper surface of the substrate. The substrate has a recessed surface that is below the upper surface of the substrate and that is laterally separated from the upper surface of the substrate by a boundary isolation structure extending into a trench within the upper surface of the substrate. The FeRAM device is arranged over the recessed surface.

Abstract: An optical inspection apparatus capable of adjusting an incident angle of a detected light beam and adjusting a detecting angle for detecting the detected light beam. A driving mechanism is used to actuate two arms having a light source and a detector disposed thereon respectively to conduct a relative movement between the two arms so as to control the incident angle and the detecting angle. By means of the embodiments, mechanism for adjusting the angle is simplified so that the apparatus is capable of being adapted to combine with the application of micro sensors such that practicality of modularization design and microminiaturization and convenience of operation are capable of being greatly improved and that the cost can be reduced.