Patents by Inventor Kuo-Chi Tu

Kuo-Chi Tu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11189788
    Abstract: An integrated circuit device has an RRAM cell that includes a top electrode, an RRAM dielectric layer, and a bottom electrode having a surface that interfaces with the RRAM dielectric layer. Oxides of the bottom electrode are substantially absent from the bottom electrode surface. The bottom electrode has a higher density in a zone adjacent the surface as compared to a bulk region of the bottom electrode. The surface has a roughness Ra of 2 nm or less. A process for forming the surface includes chemical mechanical polishing followed by hydrofluoric acid etching followed by argon ion bombardment. An array of RRAM cells formed by this process is superior in terms of narrow distribution and high separation between low and high resistance states.
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: November 30, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Fu-Chen Chang, Kuo-Chi Tu, Wen-Ting Chu
  • Publication number: 20210366987
    Abstract: An RRAM cell stack is formed over an opening in a dielectric layer. The dielectric layer is sufficiently thick and the opening is sufficiently deep that an RRAM cell can be formed by a planarization process. The resulting RRAM cells may have a U-shaped profile. The RRAM cell area includes contributions from a bottom portion in which the RRAM cell layers are stacked parallel to the substrate and a side portion in which RRAM cell layers are stacked roughly perpendicular to the substrate. The combined side and bottom portions of the curved RRAM cell provide an increased area in comparison to a planar cell stack. The increased area lowers forming and set voltages for the RRAM cell.
    Type: Application
    Filed: August 3, 2021
    Publication date: November 25, 2021
    Inventors: Te-Hsien Hsieh, Tzu-Yu Chen, Kuo-Chi Tu, Yuan-Tai Tseng
  • Publication number: 20210366988
    Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a first interconnect within a first inter-level dielectric (ILD) layer over a substrate. A memory device is disposed over the first interconnect and is surrounded by a second ILD layer. A sidewall spacer is arranged along opposing sides of the memory device and an etch stop layer is arranged on the sidewall spacer. The sidewall spacer and the etch stop layer have upper surfaces that are vertically offset from one another by a non-zero distance. A second interconnect extends from a top of the second ILD layer to an upper surface of the memory device.
    Type: Application
    Filed: August 3, 2021
    Publication date: November 25, 2021
    Inventors: Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Kuo-Chi Tu, Wen-Ting Chu, Yu-Wen Liao
  • Patent number: 11183503
    Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a plurality of lower interconnect layers disposed within a lower dielectric structure over a substrate. A lower insulating structure is over the lower dielectric structure and has sidewalls extending through the lower insulating structure. A bottom electrode is arranged along the sidewalls and an upper surface of the lower insulating structure. The upper surface of the lower insulating structure extends past outermost sidewalls of the bottom electrode. A data storage structure is disposed on the bottom electrode and is configured to store a data state. A top electrode is disposed on the data storage structure. The bottom electrode has interior sidewalls coupled to a horizontally extending surface to define a recess within an upper surface of the bottom electrode. The horizontally extending surface is below the upper surface of the lower insulating structure.
    Type: Grant
    Filed: October 25, 2019
    Date of Patent: November 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tzu-Yu Chen, Kuo-Chi Tu, Sheng-Hung Shih, Wen-Ting Chu, Chih-Hsiang Chang, Fu-Chen Chang
  • Publication number: 20210343731
    Abstract: Some embodiments relate to a ferroelectric random access memory (FeRAM) device. The FeRAM device includes a bottom electrode structure and a top electrode overlying the ferroelectric structure. The top electrode has a first width as measured between outermost sidewalls of the top electrode. A ferroelectric structure separates the bottom electrode structure from the top electrode. The ferroelectric structure has a second width as measured between outermost sidewalls of the ferroelectric structure. The second width is greater than the first width such that the ferroelectric structure includes a ledge that reflects a difference between the first width and the second width. A dielectric sidewall spacer structure is disposed on the ledge and covers the outermost sidewalls of the top electrode.
    Type: Application
    Filed: July 15, 2021
    Publication date: November 4, 2021
    Inventors: Tzu-Yu Chen, Kuo-Chi Tu, Sheng-Hung Shih, Fu-Chen Chang
  • Patent number: 11094744
    Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method may be performed by forming a memory device over a substrate and forming an inter-level dielectric (ILD) layer over the memory device. The ILD layer is selectively etched to define a first cavity that exposes a top of the memory device and to define a second cavity that is laterally separated from the first cavity by the ILD layer. The second cavity is defined by a smooth sidewall of the ILD layer that extends between upper and lower surfaces of the ILD layer. A conductive material is formed within the first cavity and the second cavity.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: August 17, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsia-Wei Chen, Chih-Yang Chang, Chin-Chieh Yang, Jen-Sheng Yang, Kuo-Chi Tu, Wen-Ting Chu, Yu-Wen Liao
  • Patent number: 11088203
    Abstract: An RRAM cell stack is formed over an opening in a dielectric layer. The dielectric layer is sufficiently thick and the opening is sufficiently deep that an RRAM cell can be formed by a planarization process. The resulting RRAM cells may have a U-shaped profile. The RRAM cell area includes contributions from a bottom portion in which the RRAM cell layers are stacked parallel to the substrate and a side portion in which RRAM cell layers are stacked roughly perpendicular to the substrate. The combined side and bottom portions of the curved RRAM cell provide an increased area in comparison to a planar cell stack. The increased area lowers forming and set voltages for the RRAM cell.
    Type: Grant
    Filed: September 19, 2019
    Date of Patent: August 10, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Te-Hsien Hsieh, Tzu-Yu Chen, Kuo-Chi Tu, Yuan-Tai Tseng
  • Publication number: 20210202502
    Abstract: A semiconductor device includes an inter-metal dielectric layer, a first conductive line, and a first ferroelectric random access memory (FRAM) structure. The first conductive line is embedded in the inter-metal dielectric layer and extends along a first direction. The first FRAM structure is over inter-metal dielectric layer and includes a bottom electrode layer, a ferroelectric layer, and a top electrode layer. The bottom electrode layer is over the first conductive line and has an U-shaped when viewed in a cross section taken along a second direction substantially perpendicular to the first direction. The ferroelectric layer is conformally formed on the bottom electrode. The top electrode layer is over the ferroelectric layer.
    Type: Application
    Filed: December 26, 2019
    Publication date: July 1, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Fu-Chen CHANG, Kuo-Chi TU, Tzu-Yu CHEN, Sheng-Hung SHIH
  • Publication number: 20210184114
    Abstract: Various embodiments of the present application are directed towards a resistive random-access memory (RRAM) cell comprising a barrier layer to constrain the movement of metal cations during operation of the RRAM cell. In some embodiments, the RRAM cell further comprises a bottom electrode, a top electrode, a switching layer, and an active metal layer. The switching layer, the barrier layer, and the active metal layer are stacked between the bottom and top electrodes, and the barrier layer is between the switching and active metal layers. The barrier layer is conductive and between has a lattice constant less than that of the active metal layer.
    Type: Application
    Filed: February 9, 2021
    Publication date: June 17, 2021
    Inventors: Fu-Chen Chang, Kuo-Chi Tu, Wen-Ting Chu, Chu-Jie Huang
  • Patent number: 11037941
    Abstract: A method for forming an integrated circuit (IC) and an IC are disclosed. The method for forming the IC includes: forming an isolation structure separating a memory semiconductor region from a logic semiconductor region; forming a memory cell structure on the memory semiconductor region; forming a memory capping layer covering the memory cell structure and the logic semiconductor region; performing a first etch into the memory capping layer to remove the memory capping layer from the logic semiconductor region, and to define a slanted, logic-facing sidewall on the isolation structure; forming a logic device structure on the logic semiconductor region; and performing a second etch into the memory capping layer to remove the memory capping layer from the memory semiconductor, while leaving a dummy segment of the memory capping layer that defines the logic-facing sidewall.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: June 15, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tzu-Yu Chen, Kuo-Chi Tu, Wen-Ting Chu, Yong-Shiuan Tsair
  • Publication number: 20210174856
    Abstract: The present disclosure relates to a method of forming a memory structure. The method includes depositing a ferroelectric random access memory (FeRAM) stack over a substrate. The FeRAM stack has a ferroelectric layer and one or more conductive layers over the ferroelectric layer. The FeRAM stack is patterned to define an FeRAM device stack. A sidewall spacer is formed along a first side of the FeRAM device stack, and a select gate is formed along a side of the sidewall spacer that faces away from the FeRAM device stack. A source region is formed within the substrate and along a second side of the FeRAM device stack, and a drain region is formed within the substrate. The drain region is separated from the FeRAM device stack by the select gate.
    Type: Application
    Filed: February 17, 2021
    Publication date: June 10, 2021
    Inventors: Tzu-Yu Chen, Kuo-Chi Tu, Wen-Ting Chu, Yong-Shiuan Tsair
  • Patent number: 11017852
    Abstract: A method of forming a memory device includes: forming a polish stop layer over a metallization layer in an inter-metal dielectric layer; performing an etching process to form an opening in the polish stop layer, in which a sidewall of the opening extends at an acute angle relative to a top surface of the polish stop layer; forming an electrode material in the opening and over the polish stop layer; planarizing the electrode material until a top surface of the polish stop layer is exposed so as to form a bottom electrode surrounded by the polish stop layer; and forming a stack of a resistance switching layer and a top electrode over the bottom electrode.
    Type: Grant
    Filed: December 2, 2019
    Date of Patent: May 25, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuo-Chi Tu, Chu-Jie Huang, Sheng-Hung Shih, Nai-Chao Su, Wen-Ting Chu
  • Patent number: 11011224
    Abstract: A memory device includes a metal structure, a first dielectric layer, a bottom electrode, a second dielectric layer, a resistance switching layer, and a top electrode. The first dielectric layer surrounds the metal structure. The bottom electrode is in contact with a top surface of the metal structure. The second dielectric layer surrounds the bottom electrode, in which a top surface of the bottom electrode is higher than a top surface of the second dielectric layer. The resistance switching layer is over the bottom electrode. The top electrode is over the resistance switching layer.
    Type: Grant
    Filed: December 2, 2019
    Date of Patent: May 18, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuo-Chi Tu, Chu-Jie Huang, Sheng-Hung Shih, Nai-Chao Su, Wen-Ting Chu
  • Patent number: 11004975
    Abstract: A semiconductor device includes a memory circuit and a logic circuit. The memory circuit includes a word line, a bit line, a common line and a memory transistor having a gate coupled to the word line, a drain coupled to the bit line and a source coupled to the common line. The logic circuit includes a field effect transistor (FET) having a gate, a drain and a source. The memory transistor has a gate electrode layer formed on a gate dielectric layer, and the gate dielectric layer includes a first insulating layer and a first ferroelectric (FE) material layer. The FET has a gate electrode layer formed on a gate dielectric layer, and the gate dielectric layer includes a second insulating layer and a second FE material layer.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: May 11, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuo-Chi Tu, Jen-Sheng Yang, Sheng-Hung Shih, Tong-Chern Ong, Wen-Ting Chu
  • Publication number: 20210098630
    Abstract: Various embodiments of the present disclosure are directed towards a ferroelectric memory device. The ferroelectric memory device includes a pair of source/drain regions disposed in a semiconductor substrate. A gate dielectric is disposed over the semiconductor substrate and between the source/drain regions. A first conductive structure is disposed on the gate dielectric. A ferroelectric structure is disposed on the first conductive structure. A second conductive structure is disposed on the ferroelectric structure, where both the first conductive structure and the second conductive structure have an overall electronegativity that is greater than or equal to an overall electronegativity of the ferroelectric structure.
    Type: Application
    Filed: December 10, 2020
    Publication date: April 1, 2021
    Inventors: Mickey Hsieh, Chun-Yang Tsai, Kuo-Ching Huang, Kuo-Chi Tu, Pili Huang, Cheng-Jun Wu, Chao-Yang Chen
  • Publication number: 20210082928
    Abstract: A semiconductor device includes a lower intermetal dielectric (IMD) layer, a middle conductive line, and a ferroelectric random access memory (FRAM) structure. The middle conductive line is embedded in the lower IMD layer. The FRAM structure is over the lower IMD layer and the middle conductive line. The FRAM structure includes a bottom electrode, a ferroelectric layer, and a top electrode. The bottom electrode is over the middle conductive line and in contact with the lower IMD layer. The ferroelectric layer is over the bottom electrode. The top electrode is over the ferroelectric layer.
    Type: Application
    Filed: September 12, 2019
    Publication date: March 18, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tzu-Yu CHEN, Sheng-Hung SHIH, Kuo-Chi TU, Wen-Ting CHU
  • Patent number: 10950784
    Abstract: Various embodiments of the present application are directed towards a resistive random-access memory (RRAM) cell comprising a barrier layer to constrain the movement of metal cations during operation of the RRAM cell. In some embodiments, the RRAM cell further comprises a bottom electrode, a top electrode, a switching layer, and an active metal layer. The switching layer, the barrier layer, and the active metal layer are stacked between the bottom and top electrodes, and the barrier layer is between the switching and active metal layers. The barrier layer is conductive and has a lattice constant less than that of the active metal layer.
    Type: Grant
    Filed: June 7, 2019
    Date of Patent: March 16, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Fu-Chen Chang, Kuo-Chi Tu, Wen-Ting Chu, Chu-Jie Huang
  • Patent number: 10930333
    Abstract: In some embodiments, the present disclosure relates to a memory structure. The memory structure has a source region and a drain region disposed within a substrate. A select gate disposed over the substrate between the source region and the drain region. A ferroelectric random access memory (FeRAM) device is disposed over the substrate between the select gate and the source region. The FeRAM device includes a ferroelectric material arranged between the substrate and a conductive electrode.
    Type: Grant
    Filed: February 5, 2019
    Date of Patent: February 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tzu-Yu Chen, Kuo-Chi Tu, Wen-Ting Chu, Yong-Shiuan Tsair
  • Publication number: 20210035992
    Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a plurality of lower interconnect layers disposed within a lower dielectric structure over a substrate. A lower insulating structure is over the lower dielectric structure and has sidewalls extending through the lower insulating structure. A bottom electrode is arranged along the sidewalls and an upper surface of the lower insulating structure. The upper surface of the lower insulating structure extends past outermost sidewalls of the bottom electrode. A data storage structure is disposed on the bottom electrode and is configured to store a data state. A top electrode is disposed on the data storage structure. The bottom electrode has interior sidewalls coupled to a horizontally extending surface to define a recess within an upper surface of the bottom electrode. The horizontally extending surface is below the upper surface of the lower insulating structure.
    Type: Application
    Filed: October 25, 2019
    Publication date: February 4, 2021
    Inventors: Tzu-Yu Chen, Kuo-Chi Tu, Sheng-Hung Shih, Wen-Ting Chu, Chih-Hsiang Chang, Fu-Chen Chang
  • Publication number: 20210035993
    Abstract: In an embodiment, a structure includes one or more first transistors in a first region of a device, the one or more first transistors supporting a memory access function of the device. The structure includes one or more ferroelectric random access memory (FeRAM) capacitors in a first inter-metal dielectric (IMD) layer over the one or more first transistors in the first region. The structure also includes one or more metal-ferroelectric insulator-metal (MFM) decoupling capacitors in the first IMD layer in a second region of the device. The MFM capacitors may include two or more capacitors coupled in series to act as a voltage divider.
    Type: Application
    Filed: February 3, 2020
    Publication date: February 4, 2021
    Inventors: Tzu-Yu Chen, Kuo-Chi Tu, Fu-Chen Chang, Chih-Hsiang Chang, Sheng-Hung Shih