Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: Apparatus, methods, and computer-readable media for facilitating network slice based reselection using machine learning are disclosed herein. An example method for wireless communication at a UE includes predicting a next active PDU session of two or more PDU sessions based on next connection setup times for each PDU session. The next connection setup times may be estimated based on connection setup events occurring over a period. The example method also includes selecting a frequency channel to camp on based on the next active PDU session.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may determine, via a first subscription of the UE, a trigger event for a conditional handover of the UE from a source network entity to a target network entity. The UE may determine, based at least in part on the trigger event, that a target band associated with the target network entity is not compatible with a serving band associated with a second subscription of the UE. The UE may store the trigger event for the conditional handover in a buffer of the UE. The UE may perform an action related to the conditional handover based at least in part on a condition being satisfied. Numerous other aspects are described.

Abstract: A device includes a semiconductor fin, and a gate stack on sidewalls and a top surface of the semiconductor fin. The gate stack includes a high-k dielectric layer, a work-function layer overlapping a bottom portion of the high-k dielectric layer, and a blocking layer overlapping a second bottom portion of the work-function layer. A low-resistance metal layer overlaps and contacts the work-function layer and the blocking layer. The low-resistance metal layer has a resistivity value lower than second resistivity values of both of the work-function layer and the blocking layer. A gate spacer contacts a sidewall of the gate stack.

Abstract: A method for facilitating dynamic service-based network selection and determination may be implemented by a communications device. A device may choose a network and/or network access provider (NAP) based on a type of service desired by a user. For the service, the system may determine which NAP provides the most desired service level for a particular network service provider (NSP). The desired service level may include such factors as power consumption, communication performance, past performance, cost, reward availability, etc. Thus, a user chooses a particular service and the system chooses the network that will provide the service at a desired level to the user.