Abstract: A circuit structure is provided. The circuit structure includes a capacitor including a top capacitor electrode; a bottom capacitor electrode parallel to the top capacitor electrode; and an insulating layer between the top and the bottom capacitor electrodes. The insulating layer includes a dielectric rod enclosed by a dielectric material. The dielectric rod has a higher dielectric constant than that of the dielectric material. The circuit structure may be a printed circuit board or packaging substrate, wherein the capacitor is formed between the two layers of the capacitor. Additional dielectric rods may be formed in the insulating layer of the capacitor and spaced apart from the dielectric rods.

Abstract: An integrated circuit structure and methods for forming the same are provided. The integrated circuit structure includes a substrate; a through-silicon via (TSV) extending into the substrate; a TSV pad spaced apart from the TSV; and a metal line over, and electrically connecting, the TSV and the TSV pad.

Abstract: A circuit structure is provided. The circuit structure includes a capacitor including a top capacitor electrode; a bottom capacitor electrode parallel to the top capacitor electrode; and an insulating layer between the top and the bottom capacitor electrodes. The insulating layer includes a dielectric rod enclosed by a dielectric material. The dielectric rod has a higher dielectric constant than that of the dielectric material. The circuit structure may be a printed circuit board or packaging substrate, wherein the capacitor is formed between the two layers of the capacitor. Additional dielectric rods may be formed in the insulating layer of the capacitor and spaced apart from the dielectric rods.