Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: A manufacturing method of a wavelength conversion device, and a wavelength conversion device manufactured by the method are provided. The manufacturing method of the wavelength conversion device of the disclosure includes the following steps. A wavelength conversion material layer is formed on a substrate by a sol-gel method. The wavelength conversion material layer includes a first colloidal material, and a fluorescent material. The wavelength conversion material layer is solidified, thereby forming a wavelength conversion layer including a plurality of first microstructures. The step of solidifying the wavelength conversion material layer includes irradiating the wavelength conversion material layer with a laser. The manufacturing method of the wavelength conversion device and the wavelength conversion device provided by the disclosure have advantages such as a simple process, and low manufacturing cost.

Abstract: A wavelength conversion element including a substrate, a wavelength conversion layer, a reflective layer, and a heat conduction and diffusion substrate is provided. The reflective layer is disposed between the substrate and the wavelength conversion layer, and the wavelength conversion layer is disposed between the heat conduction and diffusion substrate and the reflective layer. The wavelength conversion element is configured to receive an excitation light beam. The heat conduction and diffusion substrate is configured to allow the excitation light beam to pass through. The wavelength conversion layer is configured to receive and convert the excitation light beam into a converted light beam. The reflective layer is configured to reflect the converted light beam, and the heat conduction and diffusion substrate is configured to allow the converted light beam to pass through.

Abstract: A wavelength conversion material and a manufacturing method thereof, a wavelength conversion device, and a projection device are provided. The wavelength conversion material has higher phosphor conversion efficiency. The wavelength conversion material includes a first phase. A composition of the first phase is M3Al5(O1-0.5xFx)12:Ce3+, where M is at least one selected from a group consisting of yttrium (Y), lutetium (Lu), gadolinium (Gd), terbium (Tb), praseodymium (Pr), and neodymium (Nd), and 0.012?x?0.3. The wavelength conversion material with good phosphor conversion efficiency is provided.

Abstract: The present invention discloses an image capturing device and a method thereof. The image capturing device electrically connects to a host device, a display screen and an electronic device. The host device sends a FreeSync signal. The image capturing device includes a scaler module and a video capturing module. The scaler module receives the FreeSync signal from the host device and sends to the display screen. The scaler module converts the FreeSync signal into a fixed frame rate video signal. The video capturing module electrically connects to the scaler module and the electronic device. The video capturing module receives the fixed frame rate video signal, converts the fixed frame rate video signal into a transport format data, and sends the transport format data to the electronic device.

Abstract: A wavelength conversion device and a projection device. The wavelength conversion device includes a substrate and a wavelength conversion layer. The wavelength conversion layer is disposed on the substrate and includes a thermal conductive material, a wavelength conversion material, and a hole. A volume percentage of the thermal conductive material in the wavelength conversion layer is 5%-40%, and a volume percentage of the hole in the wavelength conversion layer is 0.5%-10%. When emitted by the laser light source to the wavelength conversion layer, the excitation light beam may be scattered via the hole to thereby increase the proportion of the wavelength conversion material that is excited, which may furthermore increase the light conversion efficiency of the wavelength conversion layer.

Abstract: A manufacturing method of a wavelength conversion device, and a wavelength conversion device manufactured by the method are provided. The manufacturing method of the wavelength conversion device of the disclosure includes the following steps. A wavelength conversion material layer is formed on a substrate by a sol-gel method. The wavelength conversion material layer includes a first colloidal material, and a fluorescent material. The wavelength conversion material layer is solidified, thereby forming a wavelength conversion layer including a plurality of first microstructures. The step of solidifying the wavelength conversion material layer includes irradiating the wavelength conversion material layer with a laser. The manufacturing method of the wavelength conversion device and the wavelength conversion device provided by the disclosure have advantages such as a simple process, and low manufacturing cost.

Abstract: A wavelength conversion element includes a substrate, a wavelength conversion layer and an anti-reflective layer. The wavelength conversion layer is disposed on the substrate. The anti-reflective layer is disposed on the wavelength conversion layer. The anti-reflective layer includes a first adhesive layer having a plurality of pores. A thickness of the anti-reflective layer is 500 nm to 3000 nm, a pore diameter of each of the plurality of pores is 100 nm to 2500 nm, and the thickness of the anti-reflective layer is greater than the pore diameter of the plurality of pores. A manufacturing method of the aforementioned wavelength conversion element is also provided, through which the wavelength conversion element has the anti-reflective effect.

Abstract: A wavelength conversion module, a manufacturing method of wavelength conversion module and a projection device are provided. The wavelength conversion module includes a substrate, an anodized layer and a wavelength conversion layer. The anodized layer is located on the substrate, wherein the anodized layer has a rough surface. The anodized layer is located between the substrate and the wavelength conversion layer, and the rough surface faces the wavelength conversion layer. A projection device having aforesaid wavelength conversion module and a manufacturing method of aforesaid wavelength conversion module are also provided. The wavelength conversion module of the invention has good conversion efficiency and reliability. The projection device of the invention has good optical quality and reliability. The manufacturing method of the wavelength conversion module of the invention can form the wavelength conversion module with good conversion efficiency and reliability.

Abstract: An LCD device with camera module includes a backlight module and an LCD panel. The LCD panel includes a color filter substrate, a thin film transistor (TFT) substrate, a liquid crystal layer between the color filter substrate and the TFT substrate, and a lower polarizer on a side of the TFT substrate away from the liquid crystal layer, the lower polarizer is adjacent to the backlight module. The backlight module defines a hole for the camera module. The hole extends through the lower polarizer. The hole includes a bottom wall and a sidewall coupling to the bottom wall. The bottom wall is defined and formed by the TFT substrate. An elastic element in a coupling region of the bottom wall and the sidewall blocks leakage of light from the backlight module.

Abstract: A wavelength conversion element includes a substrate, a wavelength conversion layer and an anti-reflective layer. The wavelength conversion layer is disposed on the substrate. The anti-reflective layer is disposed on the wavelength conversion layer. The anti-reflective layer includes a first adhesive layer having a plurality of pores. A thickness of the anti-reflective layer is 500 nm to 3000 nm, a pore diameter of each of the plurality of pores is 100 nm to 2500 nm, and the thickness of the anti-reflective layer is greater than the pore diameter of the plurality of pores. A manufacturing method of the aforementioned wavelength conversion element is also provided, through which the wavelength conversion element has the anti-reflective effect.

Abstract: An LCD device with camera module includes a backlight module and an LCD panel. The LCD panel includes a color filter substrate, a thin film transistor (TFT) substrate, a liquid crystal layer between the color filter substrate and the TFT substrate, and a lower polarizer on a side of the TFT substrate away from the liquid crystal layer, the lower polarizer is adjacent to the backlight module. The backlight module defines a hole for the camera module. The hole extends through the lower polarizer. The hole includes a bottom wall and a sidewall coupling to the bottom wall. The bottom wall is defined and formed by the TFT substrate. An elastic element in a coupling region of the bottom wall and the sidewall blocks leakage of light from the backlight module.

Abstract: An LCD device with camera includes a backlight module and an LCD panel. The LCD panel includes a color filter substrate, a thin film transistor (TFT) substrate, a liquid crystal layer between the color filter substrate and the TFT substrate, and a lower polarizer on a side of the TFT substrate away from the liquid crystal layer. The lower polarizer is adjacent to the backlight module. The backlight module defines a hole for camera. The camera hole extends through the lower polarizer. The camera hole includes a bottom wall and a sidewall coupling to the bottom wall. The bottom wall is defined and formed by the TFT substrate. An adhesive layer in a coupling region of the bottom wall and the sidewall blocks leakage of light from the backlight module.

Abstract: A wavelength conversion module, a manufacturing method of wavelength conversion module and a projection device are provided. The wavelength conversion module includes a substrate, an anodized layer and a wavelength conversion layer. The anodized layer is located on the substrate, wherein the anodized layer has a rough surface. The anodized layer is located between the substrate and the wavelength conversion layer, and the rough surface faces the wavelength conversion layer. A projection device having aforesaid wavelength conversion module and a manufacturing method of aforesaid wavelength conversion module are also provided. The wavelength conversion module of the invention has good conversion efficiency and reliability. The projection device of the invention has good optical quality and reliability. The manufacturing method of the wavelength conversion module of the invention can form the wavelength conversion module with good conversion efficiency and reliability.

Abstract: An input/output device used for connecting at least one external wire with a display apparatus, comprises a case, at least one I/O connector, a flip cover, and a lighting device. The case embedded in the case of the display apparatus has a wiring slot to provide the wire passing through the case. The I/O connectors embedded on the case are electrically connected to the display apparatus. The flip cover is pivoted on the case. The lighting device having a light source and a switch is associated with the flip cover to turn on or turn off the light source.

Abstract: A stand suitable for erecting a display unit of a display device on a platform is provided. The stand is provided with a base and at least a post. The post is provided with a base portion and a bar portion. The base portion is fastened to the base. The bar portion is fastened to the display unit, and has one end connected to the base portion. An orthographic projection area of the base portion to the base is greater than that of the bar portion to the base so as to increase the structure strength of the stand.

Abstract: A dampened hinge used for pivoting a flip cover onto a cover case of an electronic apparatus comprises a pivot element, a first connector, a second connector, a shaft, a first torsion element, and a second torsion element. The pivot element connected to the flip cover is set between the first connector and the second connector fixed on the cover case of the electronic apparatus. The shaft inserted through the pivot element is fixed on the first connector and the second connector. The first and second torsion elements are sleeved on the shaft. One end of the first torsion element is fixed on the first connector, the other end of that extends in adjacent to anther side of the pivoting element. One end of the second torsion element is fixed on the second connector, the other end of that extends away from anther side of the pivoting element.

Abstract: An input/output device used for connecting at least one external wire with a display apparatus, comprises a case, at least one I/O connector, a flip cover, and a lighting device. The case embedded in the case of the display apparatus has a wiring slot to provide the wire passing through the case. The I/O connectors embedded on the case are electrically connected to the display apparatus. The flip cover is pivoted on the case. The lighting device having a light source and a switch is associated with the flip cover to turn on or turn off the light source.