Patents by Inventor Kuo-Chuan Chang

Kuo-Chuan Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12243918
    Abstract: A device includes a gate structure, first and second gate spacers, source/drain regions, a refill metal structure, and a first dielectric liner. The gate structure is on a substrate. The first and second gate spacers are on opposite sides of the gate structure, respectively. The source/drain regions are spaced part from the gate structure at least in part by the first and second gate spacers. The refill metal structure is on the gate structure and between the first and second gate spacers. The first di electric liner is atop the gate structure. The first dielectric liner interposes the refill metal structure and the first gate spacer.
    Type: Grant
    Filed: June 10, 2022
    Date of Patent: March 4, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yuan-Hsiang Wu, Jia-Chuan You, Chia-Hao Chang, Kuo-Cheng Chiang, Chih-Hao Wang
  • Publication number: 20250063808
    Abstract: A semiconductor structure includes a first dielectric wall over a substrate, and two metal gate structures disposed at two sides of the first dielectric wall. Each of the metal gate structures includes a plurality of nanosheets stacked over the substrate and separated from each other, a high-k gate dielectric layer covering each of the nanosheets, and a metal layer covering and over the plurality of nanosheets and the high-k gate dielectric layer. The high-k gate dielectric layer of each metal gate structure is disposed between the metal layer of each metal gate structure and the first dielectric wall.
    Type: Application
    Filed: August 17, 2023
    Publication date: February 20, 2025
    Inventors: KUAN-TING PAN, JIA-CHUAN YOU, CHIA-HAO CHANG, KUO-CHENG CHIANG, CHIH-HAO WANG
  • Publication number: 20250063792
    Abstract: Gate isolation processes (e.g., gate-to-source/drain contact isolation) are described herein. An exemplary contact gate isolation process may include recessing (e.g., by etching) sidewall portions of a high-k gate dielectric and gate spacers of a gate structure to form a contact gate isolation (CGI) opening that exposes sidewalls of a gate electrode of the gate structure, forming a gate isolation liner along the sidewalls of the gate electrode that partially fills the CGI opening, and forming a gate isolation layer over the gate isolation liner that fills a remainder of the CGI opening. A dielectric constant of the gate isolation liner is less than a dielectric constant of the high-k gate dielectric. A dielectric constant of the gate isolation layer is less than a dielectric constant of the high-k gate dielectric. A dielectric constant of the gate isolation layer may be less than a dielectric constant of the gate isolation layer.
    Type: Application
    Filed: December 1, 2023
    Publication date: February 20, 2025
    Inventors: Jia-Chuan YOU, Chia-Hao CHANG, Chu-Yuan HSU, Kuo-Cheng CHIANG, Chih-Hao WANG
  • Publication number: 20250056848
    Abstract: A semiconductor device structure and a method for forming a semiconductor device structure are provided. The method includes forming a metal gate stack wrapped around multiple semiconductor nanostructures. The semiconductor nanostructures are beside an epitaxial structure. The method includes forming a dielectric layer over the metal gate stack and the epitaxial structure. The method further includes forming a contact opening in the dielectric layer and forming a protective layer over sidewalls of the contact opening. In addition, the method includes deepening the contact opening so that the contact opening extends into the epitaxial structure after the formation of the protective layer. The method includes forming a conductive contact filling the contact opening.
    Type: Application
    Filed: August 9, 2023
    Publication date: February 13, 2025
    Inventors: Chu-Yuan HSU, Jia-Chuan YOU, Chia-Hao CHANG, Kuo-Cheng CHIANG, I-Han HUANG
  • Publication number: 20250056867
    Abstract: An integrated circuit includes a nanosheet transistor having a plurality of stacked channels, a gate electrode surrounding the stacked channels, a source/drain region, and a source/drain contact. The integrated circuit includes a first dielectric layer between the gate metal and the source/drain contact, a second dielectric layer on the first dielectric layer, and a cap metal on the first gate metal and on a hybrid fin structure. The second dielectric layer is on the hybrid fin structure between the cap metal and the source/drain contact.
    Type: Application
    Filed: October 30, 2024
    Publication date: February 13, 2025
    Inventors: Chia-Hao CHANG, Jia-Chuan YOU, Chu-Yuan HSU, Kuo-Cheng CHIANG, Chih-Hao WANG
  • Publication number: 20250054765
    Abstract: An integrated circuit includes a first nanostructure transistor having a first gate electrode and a second nanostructure transistor having a second gate electrode. A dielectric isolation structure is between the first and second gate electrodes. A gate connection metal is on a portion of the top surface of the first gate electrode and on a portion of a top surface of the second gate electrode. The gate connection metal is patterned to expose other portions of the top surfaces of the first and second gate electrodes adjacent to the dielectric isolation structure. A conductive via contacts the exposed portion of the top surface of the second gate electrode.
    Type: Application
    Filed: October 30, 2024
    Publication date: February 13, 2025
    Inventors: Jia-Chuan YOU, Chia-Hao CHANG, Chu-Yuan HSU, Kuo-Cheng CHIANG, Chih-Hao WANG
  • Publication number: 20250040187
    Abstract: Various embodiments of the present disclosure provide a semiconductor device structure. In one embodiment, the semiconductor device structure includes a dielectric wall disposed over a substrate, first and second metal gate structure portions respectively disposed at either side of the dielectric wall. Each first and second metal gate structure portion includes a plurality of semiconductor layers vertically stacked and separated from each other, a high-K (HK) dielectric layer disposed to surround at least three surfaces of each of the semiconductor layers, and a gate electrode layer disposed between two neighboring semiconductor layers. The semiconductor device structure also includes a metal layer disposed on two opposing sidewalls of the dielectric wall.
    Type: Application
    Filed: December 4, 2023
    Publication date: January 30, 2025
    Inventors: Chia-Hao CHANG, Kuan-Ting PAN, Jia-Chuan YOU, Kuo-Cheng CHIANG, Chih-Hao WANG
  • Patent number: 9995770
    Abstract: One or more probe cards, wafer testers, and techniques for testing a semiconductor arrangement are provided. Testline arrangements are formed within scribe lines of a semiconductor wafer, in multiple directions, such as an x-direction and a y-direction. A wafer tester is configured to concurrently test the semiconductor arrangement in multiple directions using a multidirectional probe arrangement of a probe card. In some embodiments, a first pin arrangement of the multidirectional probe arrangement is mated with a first testline arrangement in a first direction, and a second pin arrangement of the multidirectional probe arrangement is mated with a second testline arrangement in a second direction. The wafer tester concurrently tests the semiconductor arrangement in multiple directions, such as in the first direction and the second direction, through the pin arrangements mated with the testline arrangements.
    Type: Grant
    Filed: March 21, 2014
    Date of Patent: June 12, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Tseng-Chin Lo, Huan Chi Tseng, Kuo-Chuan Chang, Yuan-Yao Chang, Chien-Chang Lee
  • Publication number: 20150268271
    Abstract: One or more probe cards, wafer testers, and techniques for testing a semiconductor arrangement are provided. Testline arrangements are formed within scribe lines of a semiconductor wafer, in multiple directions, such as an x-direction and a y-direction. A wafer tester is configured to concurrently test the semiconductor arrangement in multiple directions using a multidirectional probe arrangement of a probe card. In some embodiments, a first pin arrangement of the multidirectional probe arrangement is mated with a first testline arrangement in a first direction, and a second pin arrangement of the multidirectional probe arrangement is mated with a second testline arrangement in a second direction. The wafer tester concurrently tests the semiconductor arrangement in multiple directions, such as in the first direction and the second direction, through the pin arrangements mated with the testline arrangements.
    Type: Application
    Filed: March 21, 2014
    Publication date: September 24, 2015
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Tseng-Chin Lo, Huan Chi Tseng, Kuo-Chuan Chang, Yuan-Yao Chang, Chien-Chang Lee
  • Patent number: 6480019
    Abstract: A multiple voted integrated circuit logic cell testable by a scan chain comprises: an odd plurality of latching registers, each register having a data input for receiving a scan chain data signal and capable of latching the scan chain data signal and generating an output signal representative thereof; a multiple vote circuit governed by the output signals of the registers for generating an output signal of the logic cell; and a circuit coupled to each latching register for altering selectively the scan chain data signal input thereto. A scan chain test system for and method of testing at least one multiple voted logic cell of the aforementioned type are also disclosed.
    Type: Grant
    Filed: April 9, 2001
    Date of Patent: November 12, 2002
    Assignee: Goodrich Corporation
    Inventors: Arthur Howard Waldie, Robert Ward James, Kuo-Chuan Chang