Abstract: A thin film transistor includes a substrate, a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer is located above the substrate. The gate insulating layer is located above the semiconductor layer. The gate is located above the gate insulating layer and overlapping with the semiconductor layer. The gate includes a first portion, a second portion and a third portion. The first portion is extending along the surface of the gate insulating layer and directly in contact with the gate insulating layer. The second portion is separated from the gate insulating layer. Taking the surface of the gate insulating layer as a reference, the top surface of the second portion is higher than the top surface of the first portion. The third portion connects the first portion to the second portion. The source and the drain are electrically connected to the semiconductor layer.

Abstract: Devices and methods that a first gate structure wrapping around a channel layer disposed over the substrate, a second gate structure wrapping around another channel layer disposed over the substrate and a dielectric fin structure formed over a shallow trench isolation (STI) feature and between the first and second gate structures. At least one metallization layer is formed on the first gate structure, the dielectric fin structure, and the second gate structure and contiguously extends from the first gate structure to the second gate structure.

Abstract: A method of manufacturing a semiconductor device includes forming a gate electrode structure over a channel region, wherein the gate electrode structure includes a gate dielectric layer disposed over the first channel region, a gate electrode disposed over the gate dielectric layer, and insulating spacers disposed over opposing sidewalls of the gate electrode, wherein the gate dielectric layer is disposed over opposing sidewalls of the gate electrode. An interlayer dielectric layer is formed over opposing sidewalls of the insulating spacers. The insulating spacers are removed from an upper portion of the opposing sidewalls of the gate electrode to form trenches between the opposing sidewalls of the upper portion of the gate electrode and the interlayer dielectric layer, and the trenches are filled with an insulating material.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first channel structure and a second channel structure over a substrate. The semiconductor device structure also includes a first gate stack over the first channel structure, and the first gate stack has a first width. The semiconductor device structure further includes a second gate stack over the second channel structure. The second gate stack has a protruding portion extending away from the second channel structures. The protruding portion of the second gate stack has a second width, and half of the first width is greater than the second width.

Abstract: A semiconductor device according to the present disclosure includes a first gate structure and a second gate structure aligned along a direction, a first metal layer disposed over the first gate structure, a second metal layer disposed over the second gate structure, and a gate isolation structure extending between the first gate structure and the second gate structure as well as between the first metal layer and the second metal layer.

Abstract: A tool holding and displaying device includes a plate having a narrower neck portion formed between an upper orifice and a lower aperture. The upper orifice of the plate includes an inner diameter greater than that of the lower aperture of the plate, and a bracket includes a latch having an enlarged head formed on a pin for engaging into the upper orifice of the plate. The enlarged head of the latch is greater than the lower apertures of the plate, to engage with the plate, and to anchor the bracket to the plate. The plate includes one or more spring arms to engage with the pin of the latch of the bracket, to lock the latch of the bracket to the plate.

Abstract: Digital multi-media input device with continuously store function and method for forming the same. A buffering means is used to assist the conventional external storing means in the storage of multi-media data which is the product of a multi-media detecting means. Whenever the quota of the external storing means is full, the external storing means being exchanged, or the external storing means is failed, all multi-media data which being produced by the multi-media detecting means are transmitted only into the buffering means. Besides, after the external storing means is available again to store any recently inputted multi-media data, all multi-media data in the buffering means, which are stored while the external storing means being unavailable, are transmitted into the external storing means.